Rabin Paul, T. R. Lenka, and F. A. Talukdar, “Performance Improvement of CZTSSe Solar Cell by using Mg-doped ZnO as Window Layer,” 2021 IEEE 18th India Council International Conference (INDICON), 19-21 Dec 2021. (IEEE Xplore) [Scopus]

Samadrita Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Performance Enhancement of AlInGaN Quantum Well based UV-LED,” 2021 IEEE 18th India Council International Conference (INDICON), 19-21 Dec 2021. (IEEE Xplore) [Scopus]

Samadrita Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, H. P. T. Nguyen, and G. Crupi, "Effects of Spontaneous Polarization on Luminous Power of GaN/AlGaN Multiple Quantum Well UV-LEDs for Light Technology," 2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS 2021), Serbia, Nis, 20-22 Oct 2021, pp. 335-338, doi: 10.1109/TELSIKS52058.2021.9606406. (IEEE Xplore) [Scopus]

R. Singh, T. R. Lenka, S. A. Ahsan, H. P. T. Nguyen, “Analytical Study of Conduction Band Discontinuity supported 2DEG Density in AlN/Ga₂O₃ HEMT,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2021), 29-31 Jan 2021, NIT Silchar. [Scopus]

S. Vallisree and T. R. Lenka, “EQE Analysis of HIT-CZTS Tandem Solar Cell towards Minimizing Current Losses,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2021), 29-31 Jan 2021, NIT Silchar. [Scopus]

A. Srivastava, S. K. Tripathy and T. R. Lenka, “SCAPS-1D simulations for comparative study of alternative absorber materials Cu₂XSnS₄ (X= Fe, Mg, Mn, Ni, Sr) in CZTS based Solar cells,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2021), 29-31 Jan 2021, NIT Silchar. [Scopus]

M. Krishnasamy, J. R. Shinde, H. P. Mohammad, U. Deepesh and T. R. Lenka, "Design and Simulation of Smart Flooring Tiles using Two-Phased Triangular Bimorph Piezoelectric Energy Harvester," 2020 IEEE-HYDCON, Hyderabad, India, 2020, pp. 1-4, doi: 10.1109/HYDCON48903.2020.9242839. (IEEE Xplore)

Y. Agarwal, B. Das, A. J. Dutta, A. A. Deka, S. K. Tripathy, T. R. Lenka, P. S. Menon, F. Lin, A. G. Aberle, “Numerical Simulation of Tunneling Effect in High-Efficiency Perovskite/Silicon Tandem Solar Cell,” IEEE 47^th PVSC Virtual Meeting 2020, June 15- Aug 21, 2020. (IEEE Xplore)

Rajan Singh, T. R. Lenka, Ravi T. Velpula, Ha Quoc Thang Bui and Hieu P. T. Nguyen, “Investigation of E-Mode Beta-Gallium Oxide MOSFET for Emerging Nanoelectronics,” IEEE Nanotechnology Materials and Devices Conference 2019 (IEEE NMDC 2019), 27-30 Oct 2019, Stockholm, Sweden. (IEEE Xplore)

T. R. Lenka, A. C. Soibam, K. Dey, M. Thway, F. Lin, A. G. Aberle, “Device Modeling for High Efficiency Lead Free Perovskite Solar Cell with Cu₂O as Hole Transport Material,” IEEE Nanotechnology Materials and Devices Conference 2019 (IEEE NMDC 2019), 27-30 Oct 2019, Stockholm, Sweden. (IEEE Xplore)

S. R. Routray, T. R. Lenka, “Effects of Stress and Strain Distribution on Performance Analysis of GaN/InGaN/GaN Core/Shell/Shell Radial Nanowires for Solar Energy Harvesting,” 5^th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 2018, 19-21 Mar 2018, Granada, Spain. DOI: 10.1109/ULIS.2018.8354746 (IEEE Xplore)

Vallisree S., T. Rajalingam, T. R. Lenka, “Modelling of CZTS/ZnS/AZO solar cell for Efficiency Enhancement,” 2018 3rd International Conference on Microwave and Photonics (ICMAP 2018), 9-11 Feb, 2018. DOI: 10.1109/ICMAP.2018.8354643. (IEEE Xplore)

D. K. Panda and T. R. Lenka, “Device Optimization of E-Mode N-Polar GaN MOS-HEMT for Low Noise RF & Microwave Applications,” XIX International Workshop on the Physics of Semiconductor Devices 2017 (IWPSD 2017), 12-15 Dec 2017.

R. Paswan, D. K. Panda and T. R. Lenka, “Dielectric Modulated AlGaAs/GaAs HEMT for Label Free Detection of Biomolecules,” XIX International Workshop on the Physics of Semiconductor Devices 2017 (IWPSD 2017), 12-15 Dec 2017.

M. Krishnasamy, T. R. Lenka, “Nonlinear Broadband Piezo-Magneto-Elastic Energy Harvester in Bistable and Monostable Configurations,” Proceedings of 3rd International Conference on Nanotechnology for Instrumentation & Measurement Workshop (Nanofim) 2017, 16-17 Nov 2017, G.B. University, Gr. Noida, India.

D. K. Panda, A. Kumar, T. R. Lenka, “Gate Current Low Frequency Noise Model for High-K GaN MOS-HEMT,” Proceedings of 3rd International Conference on Nanotechnology for Instrumentation & Measurement Workshop (Nanofim) 2017, 16-17 Nov 2017, G.B. University, Gr. Noida, India.

B. Shougaijam, C. Ngangbam, and T. R. Lenka, “Morphology, Structural and Optical Analysis of Au Nanoparticle Assisted TiO₂ Nanowires for Opto-Nanoelectronic Applications,” IEEE NMDC 2017, 2-4 Oct 2017, Singapore. DOI: 10.1109/NMDC.2017.8350532. (IEEE Xplore)

S. R. Routray, T. R. Lenka, “Polarization Charges in High Performance GaN/InGaN/GaN Core/Shell/Shell Nanowire for Solar Energy Harvesting,” IEEE NMDC 2017, 2-4 Oct 2017, Singapore. DOI: 10.1109/NMDC.2017.8350484. (IEEE Xplore)

S. R. Routray, T. R. Lenka, “Design and Simulation of GaN/InGaN Core/Shell/Shell Radial Nanowires for Solar Energy Harvesting,” IEEE NMDC 2017, 2-4 Oct 2017, Singapore. DOI: 10.1109/NMDC.2017.8350486. (IEEE Xplore)

Krishanu Dey and T. R. Lenka, “Simulation of High Efficiency InGaP/InP Tandem Solar Cells Under Flat Plate and Concentrator Conditions,” IEEE International Conference on Microelectronics Devices Circuits and Systems (ICMDCS 2017), 10-12 Aug, 2017, VIT, Vellore, India. DOI: 10.1109/ICMDCS.2017.8211717. (IEEE Xplore)

Vallisree S., T. Rajalingam, T. R. Lenka, “Comparative Characteristics Study of the Effect of Various Gate Dielectrics on ZnO TFT,” IEEE International Conference on Energy, Communication, Data Analytics and Soft Computing (ICECDS-2017), 1-2 Aug 2017. DOI: 10.1109/ICECDS.2017.8390197. (IEEE Xplore)

A. Baidya, T R Lenka, S. Baishya, “Application of 3D double gate Junctionless transistor for ring oscillator,” 2016 IEEE International Conference on Recent Advances and Innovations in Engineering (ICRAIE), 23-25 Dec. 2016, India. DOI: 10.1109/ICRAIE.2016.7939580. (IEEE Xplore)

S. Routray and T. R. Lenka, “Numerical Study of the Influence of Polarization Charges on the Performance of GaN/InGaN Nanowire Solar Cells,” Proceedings of Materials Today-2^nd International Conference on Solar Energy Photovoltaic, 17–19 December 2016, Bhubaneswar, India.

B. Shougaijam, C. Ngangbam, and T. R. Lenka, “Fast Response Time Photodetector Based on Annealed TiO₂ Nanowires Deposited by GLAD,” IEEE TENCON 2016, 22-25 Nov 2016, Singapore. DOI: 10.1109/TENCON.2016.7848542. (IEEE Xplore)

K. Jena and T. R. Lenka, “Effect of AlN Spacer Thickness on Device Characteristics of AlInN/AlN/GaN MOSHEMT,” IEEE TENCON 2016, 22-25 Nov 2016, Singapore. DOI: 10.1109/TENCON.2016.7848652. (IEEE Xplore)

R. Kashyap, T. R. Lenka, S. Baishya, “Study of doubly clamped piezoelectric beam energy harvesters with non-traditional geometries,” 7^th International Conference on Power Electronics (IICPE 2016), 17-19 Nov. 2016, DOI: 10.1109/IICPE.2016.8079535. (IEEE Xplore)

Biraj Shougaijam, R. Swain, C. Ngangbam, and T. R. Lenka. “Enhanced Visible Light Detection by Vertically Aligned TiO2 Nanowires using Glancing Angle Deposition Technique,” Abstract proceedings of IWPSD 2015, pp. 283, 7-10 Dec, 2015.

R. Swain, T. R. Lenka, “Comparative study of critical barrier thickness for normally-off GaN-MOSHEMTs,” Abstract proceedings of IWPSD 2015, pp.578, 7-10 Dec, 2015.

K. Jena and T R Lenka, “Influence of AlN Spacer Layer on Electrical Characteristics of Lattice-Matched AlInN/AlN/GaN MOSHEMT,” Abstract proceedings of IWPSD 2015, pp.579, 7-10 Dec, 2015.

R. Swain, T. R. Lenka, “Investigation of Critical Barrier Thickness in LM-InAlN/GaN MOSHEMT towards Normally-off Operation,” IEEE TENCON 2015, 1-4 Nov 2015, Macau. DOI: 10.1109/TENCON.2015.7373087. (IEEE Xplore)

A. Baidya, T R Lenka, S. Baishya, “Performance analysis and improvement of nanoscale double gate Junctionless based inverter using high-k gate dielectrics,” IEEE TENCON 2015, 1-4 Nov 2015, Macau. DOI: 10.1109/TENCON.2015.7373040. (IEEE Xplore)

R. Swain, K. Jena, T. R. Lenka, G. N. Dash, A K Panda, “DC & RF Characteristics of normally-off AlN/GaN MOSHEMT by varying Oxide Thickness,” IEEE International Conference on Electron Devices and Solid-State Circuits 2015, Singapore, 1-4 June 2015. DOI: 10.1109/EDSSC.2015.7285135. (IEEE Xplore)

R. Swain, T. R. Lenka, “Normally-off Al_0.25Ga_0.75N/GaN MOSHEMT with Stack Gate Dielectric Structure,” IEEE International Conference on Electron Devices and Solid-State Circuits 2015, Singapore, 1 - 4 June 2015. DOI: 10.1109/EDSSC.2015.7285177. (IEEE Xplore)

J. Panda, R. Swain, G. S. Rao, T. R. Lenka, “Realization of Improved Transconductance and Capacitance Characteristics in Al_0.3Ga_0.7N/AlN/GaN HEMT,” 2015 IEEE International Conference on Electrical Electronics Signal Communication Optimization (EESCO 2015), 24-25 Jan 2015. (IEEE Xplore). DOI: 10.1109/EESCO.2015.7253989.

J. Panda, T. R. Lenka, “Comparative Analysis of GaN based MOSHEMT Devices for RF Applications,” 2015 IEEE International conference on Electrical Computer and Communication Technologies (ICECCT 2015), 5-7 Mar 2015. DOI: 10.1109/ICECCT.2015.7226141. (IEEE Xplore)

T. R. Lenka, N. V. Deshpande, “High Performance Computing Facility for North East India through Information and Communication Technology,” Proceedings of ICSIT 2015, Mar 10-13, 2015, Orlando, Florida, USA.

G. Amarnath, G. Srinivas, T R Lenka, “374GHz cutoff frequency of ultra-thin InAlN/AlN/GaN MIS HEMT,” IEEE International Conference on Computer Communication and Informatics 2015, 8-10 Jan 2015, DOI: 10.1109/ICCCI.2015.7218141. (IEEE Xplore)

G. Amarnath, G. Srinivas, T. R. Lenka, “Electrical characteristics and 2DEG properties of passivated InAlN/AlN/GaN HEMT,” IEEE International Conference on Computer Communication and Informatics 2015, 8-10 Jan 2015, DOI: 10.1109/ICCCI.2015.7218142. (IEEE Xplore)

T. R. Lenka, G. N. Dash, A. K. Panda^, “2DEG Transport Characteristics by Self-consistent Subband Calculations of Schrödinger and Poisson Equations in InAlN/GaN HEMT,” IEEE Nanotechnology Materials and Devices Conference 2014, 12-15 Oct 2014, Aci Castello, Italy, pp. 124 – 127, DOI: 10.1109/NMDC.2014.6997438. (IEEE Xplore)

R. Swain, K. Jena, A. Gaini and T. R. Lenka, “Comparative Study of AlN/GaN HEMT and MOSHEMT Structures by varying Oxide Thickness,” IEEE Nanotechnology Materials and Devices Conference 2014, 12-15 Oct 2014, Aci Castello, Italy, pp. 128 – 131, DOI: 10.1109/NMDC.2014.6997439. (IEEE Xplore)

A Bhattacharjee, T. R. Lenka, “RF and Microwave characteristics of a 20nm Gate Length InAlN/GaN based HEMT having a High Figure of Merit,” IEEE International Conference on Devices, Circuits and Systems – ICDCS 2014, 6-8 Mar, 2014, Coimbatore, TN, India. DOI: 10.1109/ICDCSyst.2014.6926151. (IEEE Xplore)

A Bhattacharjee, T. R. Lenka, “Insight to the 2DEG Transport and Mobility Effects of a 20nm Recessed Gate InAlN/AlN/GaN HEMT,” IEEE International Conference on Electronics and Communication Systems, 13-14 Feb 2014, Coimbatore, TN, India. DOI: 10.1109/ECS.2014.6892645. (IEEE Xplore)

D. Sahoo, T. R. Lenka, “RF Characteristics and Mobility Performance of a 30nm Gate Length E-mode Junctionless Nanowire Transistor,” IEEE International Conference on Electronics and Communication Systems, 13-14 Feb 2014, Coimbatore. DOI: 10.1109/ECS.2014.6892735. (IEEE Xplore)

T. R. Lenka, G. N. Dash and A. K. Panda, “2DEG Transport in Gate Recessed AlGaN/InGaN/GaN HEMT,” 2013 IEEE International Conference on EDSSC, Hong Kong, 3-5 June 2013. DOI: 10.1109/EDSSC.2013.6628042. (IEEE Xplore)

B. K. Parida and T. R. Lenka, “Design and Implementation of Reed-Solomon Encoder using Cadence Tool”, Proceedings of 1^st International Conference on Computing, Communication and Sensor Networks-CCSN-2012, 23-24 Nov, 2012, PIET, Rourkela.

P. K. Dehury, T. R. Lenka, “Advance Error Correction Code based Online Error Detection & Correction Scheme for Embedded memory,” Proceedings of 1^st International Conference on Computing, Communication and Sensor Networks 2012, 23-24 Nov, 2012, Rourkela.

T. R. Lenka and A. K. Panda, “Polarization Induced 2DEG Study of Strained Al_1-xIn_xN/GaN-based HEMT,” Proceedings of ISDMISC-2011, Sikkim, pp. 475-478, 2011.

T. R. Lenka and A. K. Panda, “Microwave Characteristics Study of AlGaN/GaN-based Heterojunction Field Effect Transistor”, Proceedings of ICMARS-2010, pp.53-54, 14-17, Dec 2010, Jodhpur.

T. R. Lenka and A. K. Panda, “Microwave Characteristics of Al_xGa_1-xN/GaN-based HEMT using Self-Consistent Subband Calculations,” Proceedings of International Symposium on Microwaves (ISM-2010), Bangalore, pp. 139-142, 11-14, Dec 2010.

T. R. Lenka and A. K. Panda, “Microwave Characteristics of Al_xGa_1-xN/In_xGa_1-xN/GaN-based HEMT using Propagation Delay Model,” 4^th IEEE International Conference on Computers and Devices for Communication (CODEC 2009), pp.1-4, 14-16, Dec 2009. (IEEE Xplore)

T. R. Lenka, and A. K. Panda, “Microwave Characteristics of Al_xGa_1-xAs/In_xGa_1-xAs/GaAs – Based Pseudomorphic HEMT to use in High Frequency VLSI Circuits”, Proceedings of International Symposium on Microwave and Optical Technology (ISMOT-2009), pp.715-718, 16-19, Dec 2009, New Delhi.

T. R. Lenka, and A. K. Panda, “Heterointerface Polarization Effect and DC Characteristics Study of Al_xGa_1-x N/In_xGa_1-xN/GaN Based High Electron Mobility Transistor”, Proceedings of International Workshop on the Physics of Semiconductor Devices, pp.117-118, 15-19, Dec 2009, New Delhi.

T. R. Lenka, and A. K. Panda, “Characteristics Study of Optimized Heterostructure based Pseudomorphic HEMT/MODFET to use in High Frequency VLSI Circuits,” Research Scholar Forum, VLSI Design and Test Symposium (VDAT-2008), July 23-26, 2008, Bangalore.