High performance low temperature FD-SOI-MOSFET on quarts completely by our self built sputter and laser annealing apparatuses.
No cleanroom but device yield > 80%. No toxic gases, so safe to human and environment.
µCLBS UV-LD laser annealing system Unit 1 (405nm)
µCLBS UV-LD laser annealing system Unit 2 (380nm/405nm/450nm/530nm)
Sputter Unit 1 , 3 chambers
Sputter Unit 2 , 5 chambers
Sputter Unit 3 , 2 chambers
Sputter Unit4, 2 Chambers
Al thermal evaporator
Ultra pure water generator (left), Draft chamber (center), Ozone generator (Right upper)
Characteristic measurement
Quasi steadystate lifetime measurement (Sinton QSSPC)
CV measurement (HP4284)
Semiconductor parameter analyzer (E5270B)
Solar simurator
IQE/EQE (Oriel IQE200)
Characteristic measurement of fabricated low-temperature FD-SOI-MOSFET on quartz