FACILITIES

Thin films deposition by sputtering

We are equipped with two home made vacuum chambers for physical vapour deposition of thin films by sputtering. Both chambers are equipped with a load-lock system. Each one has the GLAD (GLancing Angle Deposition) substrate motion control system and the RGPP (Reactive Gas Pulsing Process). A computer software module was developed with LabVIEW in order to control the motion throughout the deposition (GLAD technique) and to manage the mass flow rates of gases versus time according to various pulsing signals. In addition, the deposition process parameters such as target voltage, sputtering pressure, deposition temperature, etc. can be measured throughout the deposition. In situ diagnostic tools like OES (Optical Emission Spectroscopy), MS (Mass Spectrometry) and quartz crystal controller are also used to follow the sputtering process.

First DC co-sputtering system with GLAD and RGPP systems connected to a homemade setup for optical transmission and reflection spectroscopy in the visible range under UHV

Second DC sputtering chamber with GLAD and RGPP systems. Deposition chamber is connected to another chamber for conductivity measurements vs. temperature under UHV

Electronic transport properties

In addition to the deposition facilities, we developed home made systems to investigate electronic transport properties versus temperature in metallic and semi-conducting thin films. The four probes method is used involving the van der Pauw approach. DC conductivity versus temperature can be measured in the temperature range 5 to 800 K. Charge carrier mobilities and densities are measured by Hall effect in the temperature range 300 to 600 K.

The van der Pauw measurement system for DC electrical conductivity vs. temperature

Charge carrier mobility and concentration vs. temperature by Hall effect

DC electrical resistivity vs. temperature from 5 to 300 K