RGPP

Reactive sputtering by the Reactive Gas Pulsing Process (RGPP)

The reactive sputtering process typically exhibits non linear phenomena of the deposition parameters (hysteresis loops of the reactive gas partial pressure, deposition rate, electrical characteristics of the plasma). An innovative technique, namely “the Reactive Gas Pulsing Process – RGPP” generates different kinds of signals of one or several reactive gas mass flow rates. They can simultaneously and independently be controlled as a function of time. Such approach leads to the synthesis of nitrides, oxides, carbides, oxynitrides, carbonitrides … exhibiting tuneable compositions, and with homogeneous or multilayered structures. As a result, a wide range of physical behaviours can be reached compared to thin films prepared by the conventional reactive sputtering.

Control of the gas pulsing

This patented technique allows generating many types of signals versus time. One, two or several reactive gas mass flow rates can be managed simultaneously. The shape of the signal, period, duty cycle and other temporal parameters can easily be tuned thanks to a home made computer controlled software.

The different kinds of periodic signals generated by RGPP

Structure

Homogeneous or multilayers can be prepared. The resulting structure of the films deposited by RGPP strongly depends on the pulsing parameters, especially the gas pulsing period and the duty cycle. As a result, RGPP is an original way to produce periodic alternations of metal/oxide at the nanometric scale. Periods and sub-layer thicknesses can be modified playing on the gas pulsing parameters.

HRTEM of homogeneous films and multilayers prepared by RGPP