Compact Modeling -Enabling Better Insight of Device Features-

Monday, September 8, 2014

Advanced device technologies take advantage of the carrier characteristics in an ultimate way. Consequently, observed phenomena of such advanced devices reveal these fundamental features of the underlying carrier dynamics.

As compact device modeling requires explicit extraction of the observed device features and properties in combination with a simple physics-based mathematical description, a particularly deep insight into the carrier dynamics of advanced devices becomes possible.

Such a precise compact modeling of observed phenomena including the understanding of the device carrier dynamics is the purpose of this workshop, which additionally aims at providing a complementation of TCAD for better understanding of the physics of advanced semiconductor devices.

Mitiko Miura-Mattausch (Hiroshima University, Japan)

Topics:

• Compact modeling for all kinds of devices

• Device characterization as well as parameter extraction techniques

• Circuit simulation techniques

• Software related developments

Invited Speakers:

• Junichi Takeya (University of Tokyo, Japan)

• Christoph Jungemann (RWTH Aachen University, Germany)

Validity of Macroscopic Noise Models in the Case of High-Frequency Bipolar Transistors

• Neil Goldsman (University of Maryland, USA)

• Chenyue Ma (Hiroshima University, Japan)

• Dietmar Warning (Creative Chips GmbH, Germany)

• Art Schaldenbrand (Cadence Design Systems, Japan)

• Peter Lee (Micron Memory Japan, Inc.)

Program:

The Workshop program is available here.

Contact:

If you have any question, please contact Prof. Mitiko Miura-Mattausch (mmm@hiroshima-u.ac.jp).