Experiment Guide
Look at your favorite physics textbook about concepts of resistivity, mobility, and - last but not least - Hall effect. Then try to answer the following:
(1) An n-type phosphorous-doped silicon wafer has a resistivity rho = 1 ohm-cm. The electron mobility for the level of doping is mu = 1200 (cm/s)/(V/cm). Assuming each dopant atom contributes a single mobile electron, what is the doping density n in number/cm^3 ?
(2) The wafer has a thickness d = 500 microns. A rectangular piece of the wafer of width w = 5mm and length l = 15mm is placed in a magnetic field B = 0.1T. A current I = 10 mA is passed through the piece. What Hall voltage V_H is measured across the width of the piece? (Does the width affect the result?)
Some websites of interest are:
Silicon wafer supplier
https://order.universitywafer.com/default.aspx?cat=Silicon&diam=100mm
Charge carrier mobility in doped silicon
https://ecee.colorado.edu/~bart/book/mobility.htm
NIST site on Hall effect measurement methods
http://www.nist.gov/pml/div683/hall.cfm
van der Pauw's paper (pdf)
van der Pauw, L. J., "A method for measuring specific resistivity and Hall effect of disks of arbitrary shape", Philips Res. Repts. 13, 1-9 (1958)
Wikipedia article on the Van der Pauw method
https://en.wikipedia.org/wiki/Van_der_Pauw_method
Berkeley Advanced Lab on Hall Effect
See the various American Journal of Physics and other papers on Hall Effect listed in the PhysicsLabRefs bibliography (scroll down to "Hall Effect")
https://sites.google.com/site/physicslabrefs/home/16-solids-electronic-optical