Publications
2024
[JP124] Experimental Deonstration of combination-encoding content-addressable memory of 0.75 bits/switch utilizing Hf-Zr-O ferroelectric tunnel junctions, Manh-Cuong Nguyen, Jiwon You, Yonguk Sim, Rino Choi, Doo Seok Jeong*, Daewoong Kwon*, Materials Horizons 2024.
[CP6] Optimal data distribution in FeFET-based computing-in-memory macros, Yonguk Sim, Choongseok Song, Eun Chan Park, Jongwook Jeon, Daewoong Kwon, Doo Seok Jeong, ISCAS 2024.
[JP123] Hardware for deep learning acceleration, Choongseok Song, Changmin Ye, Yonguk Sim, Doo Seok Jeong*, Advanced Intelligent Systems 2024, 2300762.[paper]
[JP122] Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators, Kanghyeok Jeon, Jin Joo Ryu, Seongil Im, Hyun Kyu Seo, Taeyong Eom, Hyunsu Ju*, Min Kyu Yang*, Doo Seok Jeong*, Gun Hwan Kim*, Nature Communications 2024, 15, 129.[paper]
2023
[JP121] CBP-QSNN: Spiking Neural Neworks Quantized Using Constrained Backpropagation, DongHyung Yoo and Doo Seok Jeong*, IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS) 2023.[paper]
[JP120] GEBA: Gradient-Error-Based Approximation of Activation Functions, Changmin Ye and Doo Seok Jeong*, IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS) 2023.[paper]
[JP119] Training spiking neural networks using lessons from deep learning, Jason K. Eshraghian, Max Ward, Emre Neftci, Xinxin Wang, Gregor Lenz, Girish Dwivedi, Mohammed Bennamoun, Doo Seok Jeong, Wei D. Lu, Proc. IEEE [paper]
[JP118] LiNLNet: Gauging required nonlinearity in deep neural networks, SungMin Jin, Doo Seok Jeong*, APL Machine Learning 2023.[paper][code]
[JP117] BPLC+NOSO: Backpropagation of errors based on latency code with neurons that only spike once at most, SungMin Jin, Dohun Kim, DongHyung Yoo, Jason Eshraghian, Doo Seok Jeong*, Complex & Intelligent Systems 2023.[paper][code]
[JP116] LaCERA: Layer-Centric Event-Routing Architecture, ChangMin Ye, Vladimir Kornijcuk, DongHyung Yoo, Jeeson Kim, Doo Seok Jeong*, Neurocomputing 2023, 520, 46.[paper]
2022
[JP115] Optimal weight-splitting in RRAM-based computing-in-memory macros, Choongseok Song, Jeeson Kim, Doo Seok Jeong*, Adv. Intelligent Systs. 2022, 2200289. [paper]
[JP114] Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing, Jae Uk Kwon, Young Geun Song, Ji Eun Kim, Suk Yeop Chun, Gu Hyun Kim, Gichang Noh, Joon Young Kwak, Sunghoon Hur, Chong-Yun Kang, Doo Seok Jeong, Soong Ju Oh, Jung Ho Yoon, ACS Applied Materials & Interfaces, 2022, 14, 44550.
[JP113] DTS-SNN: Spiking neural networks with dynamic time-surfaces, DongHyung Yoo and Doo Seok Jeong*, IEEE Access 2022, 102659.[paper] [code]
[JP112] Low Energy and Analog Memristor Enabled by Regulation of Ru ion Motion for High Precision Neuromorphic Computing, Ji Eun Kim, Jae Uk Kwon, Suk Yeop Chun, Young Geun Song, Doo Seok Jeong, Chong‐Yun Kang, Seong Keun Kim, Sahn Nahm, Jung Ho Yoon, Adv. Electron. Mater. 2022, 2200365.
[JP111] Strategic allocation of two-dimensional van der Waals semiconductor as an oxygen reservoir for boosting resistive switching reliability, Seung-Jong Yoo, Raphael Edem Agbenyeke, Heenang Choi, Kanghyeok Jeon, Jin Joo Ryu, Taeyong Eom, Bo Keun Park, Taek-Mo Chung, Doo Seok Jeong, Wooseok Song, Gun Hwan Kim, Appl. Sur. Sci. 2020, 577, 151936.
[JP110] Dot‐Product Operation in Crossbar Array Using a Self‐Rectifying Resistive Device, Kanghyeok Jeon, Jin Joo Ryu, Doo Seok Jeong, Gun Hwan Kim , Adv. Mater. Interfaces 2022, 2200392.
2021
[CP5] CBP: Backpropagation with constraint on weight precision using a pseudo-Lagrange multiplier method, Guhyun Kim and Doo Seok Jeong*, NeurIPS 2021 [paper][code]
[JP109] Self-rectifying resistive memory in passive crossbar arrays, Kanghyeok Jeong, Jeeson Kim, Jin Joo Ryu, Seung-Jong Yoo, Choongseok Song, Min Kyu Yang, Doo Seok Jeong*, and Gun Hwan Kim*, Nature Communications 2021, 12, 2968. [paper]
[JP108] eWB: Event-based weight binarization algorithm for spiking neural networks, Dohun Kim, Guhyun Kim, Cheol Seong Hwang, and Doo Seok Jeong*, IEEE Access 2021, 9, 38097. [paper][code]
[JP107] Hardware-efficient emulation of leaky integrate-and-fire model using template-scaling-based exponential function approximation, Jeeson Kim, Vladimir Kornijcuk, ChangMin Ye, and Doo Seok Jeong*, IEEE Trans. Circuits Syst. I, Reg. Papers 2021, 68, 350. [paper]
2020
[CP4] FPGA implementation of sequence-to-sequence predicting spiking neural networks, ChangMin Ye, Vladimir Kornijcuk, Jeeson Kim, Doo Seok Jeong*, ISOCC 2020. [paper]
[CP3] TS-EFA: Resource-efficient high-precision approximation of exponential functions based on template-scaling method, Jeeson Kim, Vladimir Kornijcuk, and Doo Seok Jeong*, ISQED 2020. [paper]
[JP106] Highly linear and symmetric weight-modification in HfO2-based memristive devices for high-precision weight entries, Jin Joo Ryu, Kanghyeok Jeon, Guhyun Kim, Min Kyu Yang, Chunjoong Kim*, Doo Seok Jeong*, and Gun Hwan Kim*, Adv. Electron. Mater. 2020, 2000434. [paper]
[JP105] SPSNN: nth order sequence-predicting spiking neural network, Dohun Kim, Vladimir Kornijcuk, Cheol Seong Hwang, and Doo Seok Jeong*, IEEE Access 2020, 8, 110523. [paper][code]
[JP104] Optimal distribution of spiking neurons over multicore neuromorphic processors, Guhyun Kim, Vladimir Kornijcuk, Jeeson Kim, Cheol Seong Hwang, and Doo Seok Jeong*, IEEE Access 2020, 8, 69426. [paper][code]
[JP103] Simplified calcium signaling cascade for synaptic plasticity, Vladimir Kornijcuk, Dohun Kim, Guhyun Kim, and Doo Seok Jeong*, Neural Networks 2020, 123, 38. [paper]
2019
[CP2] Stochastic learning with Backpropagation, Guhyun Kim, Cheol Seong Hwang, and Doo Seok Jeong, ISCAS 2019 [paper]
[JP102] Combination-encoding content-addressable memory with high content density, Guhyun Kim, Vladimir Kornijcuk, Jeeson Kim, Dohun Kim, Cheol Seong Hwang, and Doo Seok Jeong*, IEEE Access 2019, 137620. [paper]
[JP101] Recent progress in real-time adaptable digital neuromorphic hardware, Vladimir Kornijcuk and Doo Seok Jeong*, Advanced Intelligent Systems 2019, 1900030. [paper]
[JP100] Artificial neural network for response inference of a nonvolatile resistance-switch array, Guhyun Kim, Vladimir Kornijcuk, Dohun Kim, Inho Kim, Cheol Seong Hwang, and Doo Seok Jeong*, Micromachines 2019, 10, 219. [paper]
[JP99] Enhanced reconfigurable physical unclonable function based on stochastic nature of multilevel cell RRAM, Gyo Sub Lee, Gun-Hwan Kim, Kisung Kwak, Doo Seok Jeong*, and Hyunsu Ju*, IEEE Trans. Electron Dev. 2019. [paper]
[JP98] Nano-intrinsic true random number generation: A device to data study, Jeeson Kim, Hussein Nili, Nhan Duy Truong, Jiawei Yang, Doo Seok Jeong, Sharath Sriram, Damith C. Ranasinghe, and Omid Kavehei, IEEE Trans. Circuits Syst. I, Reg. Papers 2019. [paper]
[JP97] Markov chain Hebbian learning algorithm with ternary synaptic units, Guhyun Kim, Vladimir Kornijcuk, Dohun Kim, Inho Kim, Jaewook Kim, Hyo Cheon Woo, Ji Hun Kim, Cheol Seong Hwang, and Doo Seok jeong*, IEEE Access 2019, 10208. [paper]
2018
[CP1] Pointer based routing scheme for on-chip learning in neuromorphic systems, Vladimir Kornijcuk and Doo Seok Jeong, IJCNN 2018.
[JP96] Reconfigurable spike routing architectures for on-chip local learning in neuromorphic systems, Vladimir Kornijcuk, Jongkil Park, Guhyun Kim, Dohun Kim, Inho Kim, Jaewook Kim, Joon Young Kwak, and Doo Seok Jeong*, Adv. Mater. Technol. (invited full paper) 2018, 1800345.
[JP95] A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors, Jung Joon Pyeon, Cheol Jin Cho, Doo Seok Jeong, Jin-Sang Kim, Chong-Yun Kang, and Seong Keun Kim, Nanotechnol. 2018, 29, 455202.
[JP94] Tutorial: Neuromorphic spiking neural networks for temporal learning, Doo Seok Jeong, J. Appl. Phys. 2018, 124, 152002.
[JP93] Nonvolatile memory materials for neuromorphic intelligent machines, Doo Seok Jeong and Cheol Seong Hwang, Adv. Mater. 2018, 1704729.
[JP92] Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells, Jihye Choi, Hyeon-Seung Lee, Beomsic Jung, Jeong-Hyun Woo, Ju-Young Kim, Kyu-Sung Lee, Jeung-hyun Jeong, Jae-Young Choi, Won Mok Kim, Wook Seong Lee, Doo Seok Jeong, Taek-Sung Lee, Doo Jin Choi, and Inho Kim, J. Phys. D: Appl. Phys. 2018, 51, 27.
[JP91] Enhanced efficiency of crystalline Si solar cells based on kerfless-thin wafers with nanohole arrays, Hyeon-Seung Lee, Jaewon Suk, Hyeyeon Kim, Joonkon Kim, Jonghan Song, Doo Seok Jeong, Jong-Keuk Park, Won Mok Kim, Doh-Kwon Lee, Kyong Jin Choi, Byeong-Kwon Ju, Taek Sung Lee, and Inho Kim, Sci. Rep. 2018, 8, 3504.
[JP90] Enhanced blue responses in nanostructured Si solar cells by shallow doping, See-Eun Cheon, Doo Seok Jeong, Jong-Keuk Park, Won Mok Kim, Taek Sung Lee, Heon Lee, and Inho Kim, J. Phys. D: Appl. Phys. 2018, 51, 125102.
[JP89] Onion-like carbon as dopant/modification-free electrocatalyst for [VO]2+/[VO2]+ redox reaction: Performance-control mechanism, Young-Jin Ko, Keunsu Choi, Jun-Yong Kim, Inho Kim, Doo Seok Jeong, Heon-Jin Choi, Hiroshi Mizuseki, and Wook-Seong Lee, Carbon 2018, 127, 31.
2017
[JP88] A physical unclonable function with redox-based nanoionic resistive memory. Jeeson Kim, Taimur Ahmed, Hussein Nili, Jiawei Yang, Doo Seok Jeong, Paul Beckett, Sharath Sriram, Damith C. Ranasinghe, Omid Kavehei, IEEE Trans. Inf. Forensic Secur. 2017, 13, 437.
[JP87] Design and fabrication of Si sub wavelength structures for broadband antireflection in mid-infrared ranges, See-Eun Cheon, Jae-Young Choi, Take Sung Lee, Doo Seok Jeong, Kyeong-Seok Lee, Wook-Seong Lee, Won Mok Kim, Inho Kim, J. Nanosci. Nanotechnol. 2017, 12, 8925.
[JP86] Fabrication of parabolic Si nano structures by nano sphere lithography and its application for solar cells, See-Eun Cheon, Hyeon-seung Lee, Jihye Choi, Ar Reum Jeong, Taek Sung Lee, Doo Seok Jeong, Kyeong-Seok Lee, Wook-Seong Lee, Won Mok Kim, Heon Lee, and Inho Kim, Scientific Reports 2017, 7, 7336.
[JP85] Scalable excitatory synaptic circuit design using floating gate based leaky integrators, Vladimir Kornijcuk, Hyungkwang Lim, Inho Kim, Jong-Keuk Park, Took-Seong Lee, Jung-Hae Choi, Byung Joon Choi, and Doo Seek Jeong*, Scientific Reports 2017, 7, 17579.
[JP84] Tungsten carbide nanowalls as electrocatalyst for hydrogen evolution reaction: New approach to durability issue, Young-Jin Ko, Jung-Min Cho, Inho Kim, Doo Seok Jeong, Kyeong-Seok Lee, Jong-Keuk Park, Young-Joon Baik, Heon-Jin Choi, Wook-Seong Lee, Appl. Catal. B 2017, 203, 684.
2016
[JP83] Random Si nano pillar fabrication by spontaneous dewetting of Indium for broadband antireflection, Junhee Choi, Doo Seok Jeong, Wook-Seong Lee, Taek Sung Lee, Kyeong-Seok Lee, Won Mok Kim, Donghwan Kim, and Inho Kim, J. Nanosci. Nanotechnol. 2016, 10, 10644.
[JP82] Random Si nano pillars for broadband antireflection in crystalline silicon solar cells, Junhee Choi, Taek Sung Lee, Doo Seok Jeong, Won Mok Kim, Kyeong-Seok Lee, Donghwan Kim, and Inho Kim, J. Phys. D 2016, 49, 375108.
[JP81] Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours, Hyungkwang Lim, Rohit Soni, Dohun Kim, Guhyun Kim, Vladimir Kornijcuk, Inho Kim, Jong-Keuk Park, Cheol Seong Hwang, and Doo Seok Jeong*, Nanoscale 2016, 8, 15621.
[JP80] Memristors for energy-efficient new computing paradigms, Doo Seok Jeong, Kyung Min Kim, Sungho Kim, Byung Joon Choi, and Cheol Seong Hwang, Adv. Elec. Mater. 2016, 2, 1600090.
[JP79] Inherently-forced tensile strain in nanodiamond-derived onion-like carbon : Consequences in defect-induced electrochemical activation, Young-Jin Ko, Jung-Min Cho, Inho Kim, Doo Seok Jeong, Kyeong-Seok Lee, Jong-Keuk Park, Young-Joon Baik, Heon-Jin Choi, Seung-Cheol Lee, and Wook-Seong Lee, Sci. Rep. 2016, 6, 23913.
[JP78] Asymmetric back contact nanograting design for thin c-Si solar cells, Inho Kim, Doo Seok Jeong, Wook Seong Lee, Won Mok Kim, Kyeong-Seok Lee, Taek-Sung Lee, Cur. Appl. Phys. 2016, 16, 568.
[JP77] Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Woojin Jeon, Taehwan Moon, Keum Do Kim, Doo Seok Jeong, Hiroyuki Yamada, and Cheol Seong Hwang, Scientific Reports 2016, 6, 19039.
[JP76] Wafer-scale growth of MoS2 thin films by atomic layer deposition, Jung Joon Pyeon, Soo Hyun Kim, Doo Seok Jeong, Seung-Hyub Baek, Chong-Yun Kang, Jin-Sang Kim, and Seong Keun Kim, Nanoscale 2016, 8, 10792.
[JP75] Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions, Rohit Soni, Adrian Petraru, Harikrishnan S. Nair, Ondrej Vavra, Martin Ziegler, Seong Keun Kim, Doo Seok Jeong*, and Hermann Kohlstedt*, Nanoscale 2016, 8, 10799.
[JP74] Leaky integrate-and-fire neuron circuit based on floating-gate integrator, Vladimir Kornijcuk, Hyungkwang Lim, Jun Yeong Seok, Guhyun Kim, Seong Keun Kim, Inho Kim, Byung Joon Choi, and Doo Seok Jeong*, Front. Neurosci. 2016, 10, 212.
[JP73] Relaxation oscillator-realized artificial electronic neurons, their responses, and noise, Hyungkwang Lim, Hyung-Woo Ahn, Vladimir Kornijcuk, Guhyun Kim, Jun Yeong Seok, Inho Kim, Cheol Seong Hwang, and Doo Seok Jeong*, Nanoscale 2016, 8, 9629.
2015
[JP72] Growth enhancement and nitrogen loss in ZnOxNy low-temperature atomic layer deposition with NH3, Soo Hyun Kim, Jung Joon Pyeon, Woo Chul Lee, Doo Seok Jeong, Seung Hyub Baek, Jin Sang Kim, Seong Keun Kim, J. Phys. Chem. C 2015, 119, 23470.
[JP71] Orientation-controlled growth of Pt film on SrTiO3 (001) by atomic layer deposition, Jung Joon Pyeon, Jun-Yun Kang, Seung Hyub Baek, Chong Yun Kang, Jin Sang Kim, Doo Seok Jeong, and Seong Keun Kim, Chem. Mater. 2015, 27, 6779.
[JP70] Photocurrent enhancements of organic solar cells by altering deleting of plasmonic Ag nanoparticles, Tyler Fleetham, Jea-Young Choi, Hyung Woo Choi, Terry Alford, Doo Seok Jeong, Taek Sung Lee, Wook Seong Lee, Kyeong Seok Lee, Jian Li, Inho Kim, Sci. Rep. 2015, 5, 14250.
[JP69] Control of the initial growth in atomic layer deposition of Pt films by surface pre-treatment, Jung Joon Pyeon, Cheol Jin Cho, Seung Hyub Baek, Chong Yun Kang, Jin Sang Kim, Doo Seok Jeong, and Seong Keun Kim, Nanotechnology 2015, 26, 304003.
[JP68] Catalytic activity for oxygen reduction reaction on platinum-based core-shell nanoparticles: all-electron density functional theory, Jungho Shin, Jung-Hae Choi, Pilyoung Cha, Seong Keun Kim, Inho Kim, Seung-Cheol Lee*, and Doo Seok Jeong*, Nanoscale 2015, 7, 15830.
[JP67] Reliability of neural information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons, Hyungkwang Lim, Vladimir Kornijcuk, Jun Yeong Seok, Seong Keun Kim, Inho Kim, Cheol Seong Hwang, and Doo Seok Jeong*, Sci. Rep. 2015, 5, 9776.
[JP66] Size dependence of spherical metal nano particles on absorption enhancements of plasmonic organic solar cells, Inho Kim, Kyu-Sung Lee, Taek-Sung Lee, Doo Seok Jeong, Wook-Seong Lee, Won Mok Kim, Kyeong-Seok Lee, Syn. Metals 2015, 199, 174.
[JP65] Electric-field-induced transport transition at LaAlO3/SrTiO3 heterointerface, Seong Keun Kim, Shin Ik Kim, Hyungkwang Lim, Doo Seok Jeong, Beomjin Kwon, Seung-Hyub Baek, and Jin-Sang Kim, Sci. Rep. 2015, 5, 8023.
2014
64. SnO2 thin films grown by atomic layer deposition using a novel Sn precursor, Min-Jung Choi, Cheol Jin Cho, Kwang-Chon Kim, Jung Joon Pyeon, Hyung-Ho Park, Hyo-Suk Kim, Jeong Hwan Han, Chang Gyoun Kim, Taek-Mo Chung, Tae Joo Park, Beomjin Kwon, Doo Seok Jeong, Seung-Hyub Baek, Chong-Yun Kang, Jin-Sang Kim, and Seong Keun Kim, Appl. Surf. Sci. 2014, 320, 188.
63. Enhancement of initial growth of ZnO films on layer-structured Bi2Te3 by atomic layer deposition, Kwang-Chon Kim, Cheol Jin Cho, Joohwi Lee, Hyun Jae Kim, Doo Seok Jeong, Seung-Hyub Baek, Jin-Sang Kim, and Seong Keun Kim, Chem. Mater. 2014, 26, 6448.
62. Triple-junction hybrid tandem solar cells with amorphous silicon and polymer-fulleren blends, Taehee Kim, Hyeok Kim, Jinjoo Park, Hyungchae Kim, Youngwoon Yoon, Sung Min Kim, Chonghoon Shin, Heesuk Jung, Inho Kim, Doo Seok Jeong, Honggon Kim, Jin Young Kim, Bong Soo Kim, Min Jae Ko, Hae Jung Son, Changsoon Kim, Junsin Yi, Seunghee Han, Doh-Kwon Lee, Sci. Rep. 2014, 4, 7154.
61. Multiprotocol-induced plasticity in artificial synapses, Vladimir Kornijcuk, Omid Kavehei, Hyungkwang Lim, Jun Yeong Seok, Wook-Seong Lee, Seong Keun Kim, Inho Kim, Byung Joon Choi, Cheol Seong Hwang, and Doo Seok Jeong*, Nanoscale 2014, 6, 15151.
60. A review of three-dimensional resistive switching cross-bar array memories from the integration and materials property point of view, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Kyung Jean Yoon, Tae Hyung Park, Dae Eun Kwon, Hyungkwang Lim, Gun Hwan Kim, Doo Seok Jeong, and Cheol Seong Hwang, Adv. Funct. Mater. 2014, 24, 5316.
59. Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions, Rohit Soni, Adrian Petraru, Paul Meuffels, Ondrej Vavra, Martin Ziegler, Seong Keun Kim, Doo Seok Jeong*, N. A. Pertsev*, and Hermann Kohlstedt*, Nat. Commun. 2014, 5, 5414.
58. Silicon nanodisk array design for effective light trapping in ultra thin c-Si, Inho Kim, Doo Seok Jeong, Wook Seong Lee, Won Mok Kim, Taek Sung Lee, Doh-Kwon Lee, Song-Han Song, Joon-Kon Kim, and Kyeong-Seok Lee, Optics Express 2014, 22, A1431.
57. Enhanced power conversion efficiency of organic solar cells by embedding Ag nano particles in exciton blocking layer, Inho Kim, Tyler Fleetham, Hyung-woo Choi, Jae-Young Choi, Taek Sung Lee, Doo Seok Jeong, Wook Seong Lee, Kyeong Seok Lee, Yong-Kyun Lee, Terry L. Afford, and Jian Li, Organic Electronics 2014, 15, 2414.
56. Optical properties of amorphous Ge1-xSex and Ge1-x-ySexAsy thin films - optical gap bowing and phonon modes, Ho Suk Lee, Hyeon Seob Si, Hosun Lee, Have-Young Shin, Seokhyun Yoon, Hyungwoo Ahn, Su Dong Kim, Suyoun Lee, Doo Seok Jeong, and Byung-ki Cheong, J. Kor. Phys. Soc. 2014, 64, 1726.
55. Atomic layer deposition of HfO2 thin film using H2O2 as oxidant, Min-Jung Choi, Hyung-Ho Park, Doo Seok Jeong, Jeong Hwan Kim, Jin-Sang Kim, and Seong Keun Kim, Appl. Surf. Sci. 2014, 301, 451.
2013
54. A novel aspect in grain size control of nanocrystalline diamond film for thin film waveguide mode resonance sensor application, Hak-Joo Lee, Kyeong-Seok Lee, Jung-Min Cho, Taek-Sung Lee, Inho Kim, Doo Seok Jeong, and Wook-Seong Lee, ACS Appl. Mater. Interfaces 2013, 5, 11631.
53. Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes, Rohit Soni*, Paul Meu.els, Adrian Petraru, Mirko Hansen, Martin Ziegler, Ondrej Vavra, Hermann Kohlstedt, and Doo Seok Jeong*, Nanoscale 2013, 5, 12598.
52. A study on the scalability of a selector device using threshold switching in Pt/GeSe/Pt, Hyung-Woo Ahn, Doo Seok Jeong, Byung-ki Cheong, Su-Dong Kim, Sang yeol Shin, Hyungkwang Lim, Donghwan Kim, and Suyoun Lee, ECS Solid State Lett. 2013, 2, N31.
51. Effect of Ge concentration in Gex Se1-x chalcogenide glass on the electronic structures and the characteristics of Ovonic threshold switching devices, Su-Dong Kim, Hyung-Woo Ahn, Sang yeol Shin, Doo Seok Jeong, Seo Hee Son, Hosun Lee, Byung-ki Cheong, Dong Wook Shin, and Suyoun Lee, ECS Solid State Lett. 2013, 2, Q75.
50. Thickness dependence of surface plasmon resonance sensor response for metal ion detection, Seung-A Jung, Taek-Seong Lee,Won Mok Kim, Kyeong-Seok Lee, Doo Seok Jeong, Wook Seong Lee, and Inho Kim, J. Phys. D: Appl. Phys. 2013, 46, 315104.
49. Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films, Hyung-Woo Ahn, Doo Seok Jeong, Byung-ki Cheong, Hosuk Lee, Hosun Lee, Su-dong Kim, Sang-Yeol Shin, Donghwan Kim, and Suyoun Lee, Appl. Phys. Lett.2013, 103, 042908.
48. Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors, Hyungkwang Lim, Ho-Won Jang, Doh-Kwon Lee, Inho Kim, Cheol Seong Hwang, and Doo Seok Jeong*, Nanoscale 2013, 5, 6363.
47. Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold, Hyungkwang Lim, Inho Kim, Jin-Sang Kim, Cheol Seong Hwang, and Doo Seok Jeong*, Nanotechnology 2013, 24, 384005.
46. Structural and optical properties of phase-change amorphous and crystalline Ge1-xTex (0 < x < 1) thin films, Jun-Woo Park, Misun Song, Seokhyun Yoon, Hyungkwang Lim, Doo Seok Jeong, Byung-ki Cheong, and Hosun Lee, Phys. Status Solidi A 2013, 210, 267.
45. Towards artificial neurons and synapses: materials point of view, Doo Seok Jeong*, Inho Kim, Martin Ziegler, and Hermann Kohlstedt, RSC Adv. 2013, 3, 3169.
44. TiO2 thin fillms for next generation memory devices, Seong Keun Kim, Kyung Min Kim, Doo Seok Jeong, Woo Jin Jeon, and Cheol Seong Hwang, J. Mater. Res. 2013, 28 313.
2012
43. Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe, Gang Zhang, Wu Zhe, Jeung-Hyun Jeong, Doo Seok Jeong, Won Jong Yoo, and Byung-ki Cheong, Solid-State Electron. 2012, 76, 67.
42. Plasmonic nanograting design for inverted polymer solar cells, Inho Kim, Doo Seok Jeong, Taek Seong Lee, Wook Seong Lee, and Kyeong-Seok Lee, Opt. Express 2012 20 A729.
41. Electric-field-enhanced ion diffusivity and mobility in electrolytes: A model study, Doo Seok Jeong*, Doh-Kwon Lee, Inho Kim, Taek Seong Lee, Wook Seong Lee, and Kyeong-Seok Lee, J. Kor. Phys. Soc. 2012, 61 913.
40. Plasmonic absorption enhancement in organic solar cells by nano disks in a buffer layer, Inho Kim, Doo Seok Jeong, Taek Seong Lee, Wook Seong Lee, and Kyeong-Seok Lee, J. Appl. Phys.2012, 111 103121.
39. Threshold resistive and capacitive switching behavior in binary amorphous GeSe, Doo Seok Jeong*, Hyungkwang Lim, Goon-Ho Park, Cheol Seong Hwang, Suyoun Lee, and Byung-ki Cheong, J. Appl. Phys. 2012, 111 102807.
38. Emerging memories: resistive switching mechanisms and current status, Doo Seok Jeong*, Reji Thomas*, R. S. Katiyar, J. F. Scott, A. Petraru, H. Kohlstedt, Cheol Seong Hwang, Rep. Prog. Phys. 2012, 75 076502.
37. Electrochemical metallization cells - blending nanoionics into nanoelectronics?, Wei Lu*, Doo Seok Jeong*, Michael N. Kozicki*, Rainer Waser*, MRS bulletin 2012, 37 124.
36. Size effects of metal nanoparticles embedded in a buffer layer of organic photovoltaics on plasmonic absorption enhancement, Inho Kim, Taek Seong Lee, Doo Seok Jeong, Wook Seong Lee, and Kyeong-Seok Lee, J. Phys. D: Appl. Phys. 2012, 45 065101.
35. Numerical study on passive crossbar arrays employing threshold switches as cell-selection-devices, Doo Seok Jeong*, Hyung-Woo Ahn, Su-Dong Kim, Myunggi An, Suyoun Lee, and Byung-ki Cheong, Electron. Mater. Lett. 2012 8, 169.
2011
34. Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe, Zhe Wu, Gang Zhang, Youngwook Park, Stephen D. Kang, Ho-Ki Lyeo, Doo Seok Jeong, Jeung-hyun Jeong, Kwangsoo No, and Byung-ki Cheong, Appl. Phys. Lett. 2011, 99, 143505.
33. Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior, Doo Seok Jeong*, Byung-ki Cheong, and Hermann Kohlstedt*, Solid-State Elec.2011, 63, 1.
32. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook, Kyung Min Kim, Doo Seok Jeong, and Cheol Seong Hwang, Nanotechnology 2011, 22, 254002.
31. Overview on the resistive switching in TiO2 solid electrolyte, Doo Seok Jeong*, Reji Thomas*, R. S. Katiyar, and J. F. Scott, Integrated Ferroelectrics 2011, 124, 87.
30. Dc current transport behavior in amorphous GeSe films, Doo Seok Jeong*, Goon-Ho Park, Hyungkwang Lim, Cheol Seong Hwang, Suyoun Lee, and Byung-ki Cheong, Appl. Phys. A2011, 102, 1027.
29. Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe, Gang Zhang, Zhe Wu, Jeung-Hyun Jeong, Doo Seok Jeong, Won Jong Yoo, Byung-ki Cheong, Curr. Appl. Phys. 2011, 11, E79.
2010
28. First-principles calculations on the energetics of nitrogen-doped hexagonal Ge2Sb2Te5, Sae-Jin Kim, Jung-Hae Choi, Seung-Cheol Lee, Byung-ki Cheong, Doo Seok Jeong, and Chan ParkJ. Appl. Phys. 2010, 107, 103522.
27. Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature, Zhe Wu, Suyoun Lee, Young-Wook Park, Hyung-Woo Ahn, Doo Seok Jeong, Jeung-hyun Jeong, Kwangsoo No, and Byung-ki Cheong, Appl. Phys. Lett. 2010, 96, 133510.
26. The effect of Ge addition on the RESET operation of a phase-change memory device using Ge-doped SbTe, Young-wook Park, Hyun Seok Lee, Hyung Woo Ahn, Zhe Wu, Suyoun Lee, Jeung-hyun Jeong, Doo Seok Jeong, Kyung-woo Yi, and Byung-ki Cheong, Curr. Appl. Phys.2010, 10, E79.
25. A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5, Suyoun Lee, Doo Seok Jeong, Jeung-hyun Jeong, Wu Zhe, Young-Wook Park, Hyung-Woo Ahn, and Byung-ki Cheong, Appl. Phys. Lett. 2010, 96, 023501.
24. Unipolar switching in Pt/ GeSexTe1-x/Pt, Doo Seok Jeong*, Seo Hee Son, Suyoun Lee, and Byung-ki Cheong, Electrochemical and Solid-State Lett. 2010, 13, G111.
2009
23. A study on the temperature dependence of characteristics of phase change memory devices, Suyoun Lee, Doo Seok Jeong, Jeung-hyun Jeong, Wu Zhe, Young-Wook Park, Hyung-Woo Ahn, Won Mok Kim, and Byung-ki Cheong, Appl. Phys. Lett. 2009, 95, 093504.
22. Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells, Doo Seok Jeong*, Herbert Schroeder, and Rainer Waser,Nanotechnology, 2009, 20, 875201.
21. Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell, Doo Seok Jeong*, Herbert Schroeder, and Rainer Waser, Phys. Rev. B 2009, 79, 195317.
2008
20. Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere, Doo Seok Jeong*, Herbert Schroeder, Uwe Breuer, and Rainer Waser, J. Appl. Phys. 2008, 104, 123716.
2007
19. Resistive switching in a Pt/TiO2/Pt thin film stack a candidate for a non-volatile ReRAM, Herbert Schroeder and Doo Seok Jeong, Microelectronic Engineering 2007, 84, 1982.
18. Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack, Doo Seok Jeong*, Herbert Schroeder, and Rainer Waser, Electrochemical and Solid-State Lett.2007, 10, G51.
2006
17. Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes, Kyung-Min Kim, Byung Joon Choi, Doo Seok Jeong, Cheol Seong Hwang, Appl. Phys. Lett. 2006, 89, 162912.
16. Resistive switching in Pt/Al2 O3/TiO2/Ru stacked structures, Kyung-Min Kim, Byung Joon choi, BonWook Koo, Seol Choi, Doo Seok Jeong, and Cheol Seong Hwang, Electrochemical and Solid-State Lett. 2006, 9, G343.
15. Impedance spectroscopy of TiO2 thin film showing resistive switching, Doo Seok Jeong*, Herbert Schroeder, and Rainer Waser, Appl. Phys. Lett. 2006, 89, 082909.
14. Study of negative resistance phenomenon in transition metal oxide films from statistical mechanics point of view, Doo Seok Jeong*, Byung Joon Choi, and Cheol Seong Hwang*, J. Appl. Phys. 2006, 100, 113724.
2005
13. Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4/SiO2/Si3N4 multi-layer for flash memory application, Sug Hun Hong, Jae Hyuck Jang, Tae Joo Park, Doo Seok Jeong, Miyoung Kim, and Cheol Seong Hwang, Appl. Phys. Lett.2005, 87, 152106.
12. Dielectric dispersion of Y doped-BST film in high frequency (10 kHz - 67 GHz) domain, Doo Seok Jeong, Cheol Seong Hwang, J. D. Baniecki, T. Shioga, K. Kurihara, N. Kamehara, and M. Ishi, Appl. Phys. Lett. 2005, 87, 232903.
11. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition, B. J. Choi, Doo Seok Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R.Waser, B. Reichenberg, S. Tiedke, J. Appl. Phys. 2005, 98, 033715.
10. Growth characteristics of atomic layer deposited T iO2 thin films on Ru and Si electrodes for memory capacitor applications, W. D. Kim, G. W. Hwang, O. S. Kwon, S. K. Kim, M. Cho, Doo Seok Jeong, S. W. Lee, M. H. Seo, C. S. Hwang, J. Electrochem. Soc. 2005, 152, C552.
9. Identification of a determining parameter for resistive switching of TiO2 thin films, C. Rohde, B. J. Choi, Doo Seok Jeong, S. Choi, J.-S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 2005, 86, 262907.
8. Tunneling assisted Poole-Frenkel conduction mechanism in HfO2 thin films, Doo Seok Jeong and Cheol Seong Hwang, J. Appl. Phys. 2005, 98, 113701.
7. Reason for obtaining an optical frequency dielectric constant from the Poole-Frenkel conduction behavior of atomic layer deposited HfO2 films, Doo Seok Jeong, Hong Bae Park, and Cheol Seong Hwang, Appl. Phys. Lett. 2005, 86, 072903.
6. Tunneling current from a metal electrode to many traps in an insulator, Doo Seok Jeong and Cheol Seong Hwang, Phys. Rev. B 2005, 71, 165327.
5. Fabrication of ultra thin IrO2- top-electrode for improving thermal stability of metal-insulator-metal field emission cathodes, Tae Joo Park, Doo Seok Jeong, Cheol Seong Hwang*, Min Soo Park, and Nam-Seok Kang, Thin Solid Films 2005. 471, 236.
2004
4. Voltage-induced degradation in self-aligned polycrystalline silicon gate n-type field-effect transistors with HfO2 gate dielectrics, Jaehoo Park, Moonju Cho, Hong Bae Park, Tae Joo Park, Suk Woo Lee, Sug Hoon Hong, Doo Seok Jeong, Chihoon Lee, Jihoon Choi, and Cheol Seong Hwang, Appl. Phys. Lett. 2004, 85, 5965.
3. Comparison between atomic-layer deposited HfO2 films using O3. or H2O oxidant and Hf[N(CH3)2]4 precursor, Moonju Cho, Doo Seok Jeong, Jaehoo Park, Hong Bae Park, Suk Woo Lee, Tae Joo Park, Cheol Seong Hwang, Gi Hoon Jang, and Jaehack Jeong, Appl. Phys. Lett. 2004, 85, 5953.
2. Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films, Chihoon Lee, Jihoon Choi, Moonju Cho, Doo Seok Jeong, Cheol Seong Hwang, and Hyeong Joon Kim, Appl. Phys. Lett. 2004, 84, 2868.
1. The positive temperature coefficient of resistivity effect in paraelectric (Ba, Sr)TiO3 thin films, Doo Seok Jeong, Kun Ho Ahn, Woo Young Park, and Cheol Seong Hwang, Appl. Phys. Lett. 2004. 84, 94.