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Projects:
Project Title: A New Approach to Determining the Nature and Longitudinal Distribution of Defects at the Dielectric-Semiconductor Interface.
Funding Agency: Ministry of Innovative Development of the Republic of Uzbekistan
Period: 2018-2020
Project Title: Study of self-heating effect in nanosheet multilayer field-effect transistor.
Funding Agency: Ministry of Innovative Development of the Republic of Uzbekistan
Period: 2021-2023
Research areas
Interface defects distribution along a channel of nanosized JLMOSFET
Designing of Ultra-Low-Power electronic devices
JLMOSFET
Semiconductor nanostructures
A new type of semiconductor memory elements
Semiconductor-insulator interfaces
Teaching
Atom physics
Electronics
Semiconductor physics
Profile in scientific research bases
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