Balasubbareddy, M., Sivasankaran, K., Atamuratov, A.E., Khalilloev, M.M. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization Journal of Computational Electronics, 2025, 24(5), 144
Atamuratov, A.E., Jabbarova, B.O., Khalilloev, M.M., Rajapov D.R. Yusupov, Ahmed, Chedjou., Jean Chamberlain., Blugan, G., Saidov, K. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET Micro and Nanostructures, 2025, 197, 208015
Atamuratov, A., Jabbarova, B., Khalilloev, M., Yusupov, A., Sivasankaran, K. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET International Conference of Young Specialists on Micro Nanotechnologies and Electron Devices Edm, 2024, pp. 2630–2633
M. Balasubbareddy, K. Sivasankaran, Atabek E. Atamuratov, Mahkam M. Khalilloev, Optimization of vertically stacked nanosheet FET immune to self-heating (2023) Micro and Nanostructures 182 (2023) 207633.
Atamuratov, A.E., Jabbarova, B.O., Khalilloev, M.M., Yusupov, A., Sivasankaran, K., Chedjou, J.C., Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET (2022) Nanosystems: Physics, Chemistry, Mathematics, 13 (2), pp. 148-155.
Atamuratov, A.E., Jabbarova, B.O., Khalilloev, M.M., Yusupov, A., The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes (2021) Technical Physics Letters 47(7), pp. 542-545.
Atamuratov, A.E., Jabbarova, B.O., Khalilloev, M.M., Yusupov, A., Loureriro, A.G., Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries (2021) Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021 9455728, pp. 62-65.
Atamuratov, A.E., Khalilloev, M.M., Yusupov, A., Chedjou, J.C., Kyamakya, K., Amplitude of random telegraph noise in junctionless FinFET with different channel shape (2021) e-Journal of Surface Science and Nanotechnology 19, pp. 9-12.
Atamuratov, A.E., Khalilloev, M.M., Yusupov, A., Chedjou, J.C., Kyandoghere, K., Contribution to the physical modelling of single charged defects causing the random telegraph noise in junctionless FinFET (2020) Applied Sciences (Switzerland) 10(15),5327.
Khalilloev, M.M., Jabbarova, B.O., Nasirov, A.A., The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET (2019) Technical Physics Letters 45(12), pp. 1245-1248.
A. E. Atamuratov, M. Khalilloev, A. Abdikarimov, Z. A. Atamuratova, M. Kittler, R. Granzner, F. Schwierz, Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2017, 8 (1), P. 75–78.
A. E. Atamuratov, A. Abdikarimov, M. Khalilloev, Z. A. Atamuratova, R. Rahmanov, A. Garcia-Loureiro, A. Yusupov, Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2017, 8 (1), P. 71–74.
