PUBLICATION

Khalilloev M.M., Jabbarova B.O., Hasanov A., Ibodullaev G., Atamuratov A.E. First-principles investigation of the electronic properties of monolayer MoS2 using DFT-based QuantumATK simulations. East European Journal of Physics, 2026, 2026(1), pp. 221-227.

Atamuratov A.E., Rajapov D.R., Khalilloev M.M., et al. A comprehensive study of the impact of the gate oxide material composition on the self-heating effect in nanosheet field effect transistor. Silicon, 2025, 17(17), pp. 3879-3886.

Balasubbareddy M., Sivasankaran K., Atamuratov A.E., Khalilloev M.M. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization. Journal of Computational Electronics, 2025, 24(5), 144.

Khalilloev M.M., Jabbarova B.O., Eshchanov F., Atamuratov A.E. Effect of gate oxide and back oxide materials on self-heating effect in FinFET. East European Journal of Physics, 2025, 2025(3), pp. 253-256.

Ismaylov B.K., Ismailov K.A., Zikrillaev N.F., et al., Khalilloev M.M. Investigation of the behavior of nickel impurity atoms in the silicon lattice based on first principles. East European Journal of Physics, 2025, 2025(3), pp. 442-448.

Atamuratov A.E., Karimov I., Foziljonov M., et al., Khalilloev M.M. Impact of local oxide trapped charge on electrical and capacitance characteristics of SOI FinFET. East European Journal of Physics, 2025, 2025(3), pp. 357-364.

Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., et al. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET. Micro and Nanostructures, 2025, 197, 208015.

Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., Yusupov A., Sivasankaran K. Influence of the gate oxide and back oxide material types on self-heating effect in junctionless FinFET. International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM), 2024, pp. 2630-2633.

Balasubbareddy M., Sivasankaran K., Atamuratov A.E., Khalilloev M.M. Optimization of vertically stacked nanosheet FET immune to self-heating. Micro and Nanostructures, 2023, 182, 207633.

Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., et al. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FinFET. Nanosystems: Physics, Chemistry, Mathematics, 2022, 13(2), pp. 148-155.

Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., Yusupov A. The self-heating effect in junctionless fin field-effect transistors based on silicon-on-insulator structures with different channel shapes. Technical Physics Letters, 2021, 47(7), pp. 542-545.

Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., Yusupov A., Garcia-Loureiro A.J. Self-heating effect in nanoscale SOI junctionless FinFET with different geometries. Proceedings of the 13th Spanish Conference on Electron Devices (CDE 2021), 2021, pp. 62-65.

Atamuratov A.E., Khalilloev M.M., Yusupov A., Chedjou J.C., Kyamakya K. Amplitude of random telegraph noise in junctionless FinFET with different channel shape. e-Journal of Surface Science and Nanotechnology, 2021, 19, pp. 9-12.

Atamuratov A.E., Khalilloev M.M., Yusupov A., Chedjou J.C., Kyamakya K. Contribution to the physical modelling of single charged defects causing the random telegraph noise in junctionless FinFET. Applied Sciences (Switzerland), 2020, 10(15), 5327.

Khalilloev M.M., Jabbarova B.O., Nasirov A.A. The influence of fin shape on the amplitude of random telegraph noise in the subthreshold regime of a junctionless FinFET. Technical Physics Letters, 2019, 45(12), pp. 1245-1248.

Atamuratov A.E., Abdikarimov A., Khalilloev M.M., Atamuratova Z.A., Rahmanov R., Garcia-Loureiro A., Yusupov A. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes. Nanosystems: Physics, Chemistry, Mathematics, 2017, 8(1), pp. 71-74.

Atamuratov A.E., Khalilloev M.M., Abdikarimov A., Atamuratova Z.A., Kittler M., Granzner R., Schwierz F. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate. Nanosystems: Physics, Chemistry, Mathematics, 2017, 8(1), pp. 75-78.