Personnel
Current Personnel
Positions
Contact Prof. John David or Dr. Robert Richards for information on positions in the group.
Professor John P.R. David
j.p.david@sheffield.ac.uk
B.Eng University of Sheffield 1976, PhD University of Sheffield 1983
Previously worked for Marconi Optical Components as a senior characterisation engineer. Professor since 2004, and served as head of EEE department from 2009-2013.
Research interests are the growth and characterisation of GaAsBi and InAsBi, and the development of bulk and MQW diodes based on these materials for a range of opto-electronic devices such as solar cells, IR-photodiodes and lasers.
Other research interests include impact ionisation, photodiodes, and avalanche photodiodes.
Dr Robert D. Richards
r.richards@sheffield.ac.uk
MBE growth, optical and structural characterisation, InGaAsBi lasers, photovoltaics
Robert’s research vision is of a technology led, sustainable future. He is particularly interested in realising new materials for telecommunications and third generation photovoltaics.
Robert gained his MPhys degree and PhD at the University of Sheffield, the latter through the E-Futures Doctoral Training Centre. Throughout his PhD Robert studied the molecular beam epitaxy growth of the dilute bismide alloys GaAsBi and InAsBi. After his PhD, Robert completed an EPSRC Doctoral Prize Fellowship and a further year working as a PDRA. Robert was awarded a Royal Academy of Engineering Research Fellowship, which started in 2017.
Dr Thomas B.O. Rockett
t.b.rockett@sheffield.ac.uk
Thomas joined the group in October 2014 after receiving an MPhys degree from the University of Nottingham. Previous experience includes working at Land Infrared on infrared thermometers for the steel and glass industries. Thomas' research interests are the MBE growth of III-V-Bi semiconductors, their optical and structural characterisation, and temperature measurement.
Nada Adham
naadham1@sheffield.ac.uk
Nada joined the group in September 2018 after receiving a BEng degree in Electrical and Electronic Engineering from the University of Sheffield. Her current work is focused on optical and electrical characterisation of InGaAs and GaAsBi bulk, quantum wells and nanowires with hands-on experience in GaAsBi growth using molecular beam epitaxy.
Xiao Jin
Bio
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Matthew Carr
mcarr1@sheffiled.ac.uk
Matthew joined the group in September 2020 after receiving a MEng in Materials Science and Engineering from the University of Sheffield. His current area of research focus is on material growth of GaAsBi bulk films and InAs quantum dots with a plan to extend to include growth of GaAsBiN bulk films in the near future.
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Yifan Liu
yfliu1@sheffield.ac.uk
Yifan Liu received a B.Eng degree in electronic and electrical engineering from the SouthEast University, Nanjing, China, in 2018. She is now pursuing a PhD in the III-V-Bi group. She specialises in the characterization of III-V semiconductor materials and avalanche photodiodes in particular.
Xiaofeng Tao
xtao10@sheffield.ac.uk
Xiaofeng joined the group in October 2020 after receiving an MSc degree in Electronic and Electrical Engineering from the University of Sheffield in 2019. His current research area covers molecular beam epitaxy growth of Bismuth alloys, particularly GaAsBi, and the investigation of their optical and electrical properties.
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Shiyuan Gao
Bio
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Previous Personnel
Dr Faebian Bastiman
Dr Christopher Hunter
Dr Abdul Rahman Mohmad
Dr Zhize Zhou
Dr Faezah Harun
Faezah joined the group in March 2014 after receiving an MEng degree in Electronics Engineering from the University of Sheffield in 2013. Previous research experience includes design project for swept laser source. Faezah' research is focused on device fabrication and device optical and electrical characterisation for photovoltaic applications.
Dr Yuchen Liu
BEng University of Sheffield 2014
MSc University of Sheffield 2015
Yuchen joined the group in May 2016 after receiving an MSc degree in Semiconductors and Photonics from the University of Sheffield in 2016. The current research area includes molecular beam epitaxy growth of Bismuth alloys GaAsBi and investigate their optical and electrical characterisation.
Dr Nick Bailey
Nick joined the group in September 2017 after receiving an MEng degree from the University of Sheffield. His current work is on MBE growth of bulk bismide devices and InAs QDs using bismuth. Research interests include MBE growth of novel bismide materials for optoelectronics.
Danuta Mendes
Mohamad Riduwan Md Nawawi
Dr Yi Gu
Visiting researcher
Rowan Reed
Summer student
Christos Christou
Summer student