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Introduction
Introduction
Welcome to the website of the University of Sheffield dilute bismides research group! We produce and characterise novel materials for next generation optoelectronic device applications.
The group specialises in development of dilute bismide material systems, such as GaAsBi, InAsBi, and InGaAsBi. Because we can grow and process our own devices, we are able to optimise the production of dilute bismides for specific device applications.
Our main experimental facilities are located in the University of Sheffield Nanoscience and Technology Centre. We operate two molecular beam epitaxy reactors, and have temperature dependent photoluminescence, dark current, photocurrent and electroluminescence facilities. We can also access the X-ray diffraction and Nomarski microscopy equipment hosted in our departmental clean rooms.
Bismides
Bismides
The replacement of a small fraction of group V atoms with bismuth in a host III-V lattice causes a dramatic decrease in the band gap, leading to a wide range of potential applications. These include photovoltaics, infra-red photodiodes, spintronics, and several different laser applications. At Sheffield we are particularly interested in researching the growth and fabrication techniques that are necessary to achieve high performance devices with this material.
Figure left:
Electroluminescence of GaAsBi pin diode with varying injection currents (1, 2, 5, 10 mA), as viewed with the probing camera. The EL has a peak around 930 nm. The camera is supposed to have an infra-red blocking filter, which is clearly not very effective!
Contact Details
Email addresses for all members of our group are available on the personnel page.
Address
Lab 104,
Nanoscience and Technology Centre,
University of Sheffield,
Broad Lane
S3 7HQ
Our location: Nanoscience and Technology Centre
Our location: Nanoscience and Technology Centre
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