Research

Our current research interests are:

1) Multi-Scale Modeling of 2D Material-Based Logic and Memory (RRAM) Devices

We develop multi-scale frameworks to investigate 2D material heterostructures for logic and memory applications. Our approach spans first-principles calculations (DFT) for electronic properties, quantum transport modeling for charge conduction, and device-level simulations for realistic performance estimation.

• Example: Impact of Re-doping in MoS₂ on electronic structure and I–V characteristics.

2) Electro-Thermal Reliability of Memristive Devices

We study resistive switching mechanisms in 2D material-based memristors structures under electric field stress. Our modeling includes charge density evolution, low- and high-resistance states (LRS/HRS), and temperature profiles obtained from electro-thermal finite-element simulations.

• Example: Understand the impact of cycle-to-cycle variability in Au-MoS2-Au memristors at atomic-scale.

Applications: Beyond Si logic and memory devices, and neuromorphic computing.

3) Process-Device Co-Optimization for III-V Thin Film Technologies

To enable III-V-based high-performance electronics, we model process steps such as MoCVD growth using reactor-scale CFD simulations and integrate them with device-level simulations for performance tuning.

• Focus: Growth kinetics, defect control, and process-induced variability at the device level.
  
  

4) RF Circuit-Technology Co-Design for Sub-THz Applications

We design high-frequency circuits e.g. Phase-Locked Loops (PLLs), voltage-controlled oscillators (VCOs), and inductors, targeting sub-THz communication systems. Our work involves:

• System-level PLL design for low phase noise.

• Electromagnetic and parasitic modeling of inductors for high-Q performance.

• Goal: Co-optimization of circuit topology and technology nodes for next-gen RF systems.