PhD Research Scholars:
Vaidehi Vijay Painter (Simulation of GaN-based HEMT characteristics for RF applications)
Shikha Kumari (Experiment and Simulation studies for 4H-SiC-based JBS and PiN diodes)
MS Students (by Research):
Vivek Jaiswal (Experiment and Simulation studies for 4H-SiC-based radiation detectors)
M.Tech Students:
Kaushik Shivanand Powar (TCAD simulation of power GaN HEMTs)
Venkata Komalesh Tadepalli (TCAD simulation of AlGaN/GaN HEMTs)
B.Tech Students (RnD projects):
Rashmi Singh and Shivam Kumar (Spring 2023: J-V fitting analysis of Schottky barrier diodes)
Kumar Piyush and Shreesh Singh (Spring 2024: TCAD simulation of Ga2O3 Schottky barrier diodes)