P. Vigneshwara Raja
Assistant Professor, Department of EECE
Indian Institute of Technology Dharwad, since Feb 2022.
Email: vigneshwararaja@iitdh.ac.in
Education:
Ph.D. in Si and SiC Radiation Detectors (Jan 2013 - Feb 2019), IIT Bhubaneswar, Odisha, India (Supervisor: Prof. N. V. L. Narasimha Murty).
Master of Engineering (M.E.), Applied Electronics (2009-2011), PSG College of Technology, Coimbatore (acquired GATE Scholarship).
B. E. in Electronics & Communication Engg. (ECE) (2005-2009), Mepco Schlenk Engineering College (Anna university affiliated), Sivakasi.
Postdoc Experiences:
Postdoctoral Researcher at Ampere Laboratory, INSA Lyon, France from Sep 2021 to Jan 2022 (Advisor: Prof. Dominique Planson).
Postdoctoral Researcher at University of Aveiro, Portugal from Jan 2021 to Jul 2021 (Advisor: Prof. Jose Carlos Pedro).
Postdoctoral Researcher at Tel Aviv University, Israel from Nov 2019 to Oct 2020 (Advisor: Prof. Arie Ruzin).
Research Internship at CNRS XLIM Laboratory, University of Limoges, France, June-July 2019 (Advisor: Prof. Jean-Christophe Nallatamby).
Postdoctoral Researcher at IIT Madras, India from Jan 2018 to Nov 2019 (Advisors: Prof. Amitava DasGupta and Prof. Nandita DasGupta).
Research Interests:
GaN-based High Electron Mobility Transistors (HEMTs) for Microwave and RF applications.
Wide Bandgap (SiC Power Diodes and Transistors, Normally-off GaN transistors) Power Semiconductor Devices.
Semiconductor (4H-SiC, Ga2O3, Diamond) Radiation Detectors for Nuclear, Space, Particle Physics, and Medical Applications.
Characterization of Traps in Devices by Deep Level Transient Spectroscopy (DLTS) and TSC.
TCAD Simulation of Semiconductor Devices and Detectors.
Research Collaborations:
XLIM Laboratory, University of Limoges, CNRS UMR 7252, France.
Ampere Laboratory, CNRS UMR 5005, INSA Lyon, France.
Department of Electrical Engineering, IIT Madras, India.
Department of Electrical Engineering, IIT Tirupati, India.
European Organization for Nuclear Research (CERN) RD50 Observer.
Teaching:
Network Theory (core UG course).
Electronic Devices (UG core half-semester course).
Devices and Circuits Laboratory (core UG Lab).
Physics of Transistors (PG+UG).
Power Semiconductor Devices (PG).
Semiconductor Radiation Detectors (PG+UG).
VLSI Simulation Laboratory (PG+UG, on TCAD device simulation)
Hands-on-Engineering Lab (1st year lab on EECE experiments)