Publications

JOURNAL PUBLICATIONS

S. Kumari, Besar Asllani, Pierre Brosselard, Dominique Planson, P. V. Raja, "Al-acceptor incomplete ionization effects on static and reverse recovery characteristics of 4H-SiC PiN power diodes," Solid-State Electronics (submitted).
S. Kumari, S. Singh, K. Piyush, P. V. Raja, "Performance-Limiting Trapping Effects in n-type Ga2O3 Schottky Barrier Diodes," IEEE Trans. Device Mater. Reliab. (revision submitted).
V. V. Painter, R. Sommet, F. Gaillard, J. -C. Nallatamby, P. V. Raja, "Source-connected field-plate effects on static current, trap signature, and thermal resistance of AlGaN/GaN HEMT," Physica Status Solidi (a), 2025.
V. Jaiswal, and P. V. Raja, "Development and validation of TCAD-based neutron radiation damage model for 4H-SiC SBD alpha-particle Detectors," IEEE Trans. Nucl. Sci. , 2025, DOI: 10.1109/TNS.2025.3644388
V. V. Painter, J. -C. Nallatamby, R. Sommet, P. V. Raja, "Source-connected and gate-connected field-plate influence on thermal resistance (RTH) of AlGaN/GaN HEMT with varying passivation thickness," Microelectron. Rel., vol. 175, Art. no. 115947, 2025, DOI: 10.1016/j.microrel.2025.115947
V. V. Painter, R. Sommet, C. Chang, V. D. G. Brunel, F. Gaillard, J. -C. Nallatamby, P. V. Raja, "Fe-related trapping and de-trapping dynamics in AlGaN/GaN HEMTs inspected by drain-lag, gate-lag, and double-pulsed DCT spectroscopy," IEEE Trans. Device Mater. Reliab., 2025, DOI: 10.1109/TDMR.2025.3602857
S. Kumari, P. Brosselard, D. Planson, P. V. Raja, "Modified TCAD simulation approach to investigate electron trapping effects in 4H-SiC JBS diodes," Microelectron. Rel., vol. 173, Art. no. 115876, 2025, DOI: 10.1016/j.microrel.2025.115876
V. V. Painter, J. -C. Nallatamby, R. Sommet, P. V. Raja, "A new method to estimate surface donor density (NTD) in AlGaN/GaN HEMT by validated DCT simulations," Physica Status Solidi - RRL, vol. 2500170, 2025, DOI: 10.1002/pssr.202500170
V. V. Painter, R. Sommet, C. Chang, V. D. G. Brunel, F. Gaillard, J. -C. Nallatamby, P. V. Raja, "Fe-doping starting depth impacts on static and transient characteristics of 0.15 μm AlGaN/GaN HEMT," Micro and Nanostructures, vol. 205, Art. no. 208197, 2025, DOI: 10.1016/j.micrna.2025.208197
K. S. Pawar, V. K. Tadepalli, V. V. Painter, R. Sommet, A. Chakravorty, P. V. Raja, "Maximum and average thermal resistance for GaN-based HEMTs on SiC, Si, and Sapphire substrates," Solid-State Electronics, vol. 227, Art. no. 109121, 2025, DOI: 10.1016/j.sse.2025.109121
V. Jaiswal, and P. V. Raja, "Accurate TCAD simulation model for high-performance 4H-SiC SBD alpha-particle Detectors," IEEE Trans. Nucl. Sci., vol. 72, pp. 3-10, 2025, DOI: 10.1109/TNS.2024.3509919
V. V. Painter, J. -C. Nallatamby, R. Sommet, P. V. Raja, "Influence of field-plate, gate width and voltage dependence of Thermal Resistance (RTH) of AlGaN/GaN HEMT," IEEE Trans. Electron Devices, vol. 71, pp. 6552 – 6559, 2024. 2024, DOI: 10.1109/TED.2024.3453217
S. Kumari, R. Singh, S. Kumar, et al., P. V. Raja, "Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN, and AlGaN/GaN epitaxial substrates," Semicond. Sci. Technol., vol. 39, Art. no. 065016, 2024, DOI: 10.1088/1361-6641/ad4a65
P. V. Raja, V. V. Painter, E. Dupouy, R. Sommet, J. -C. Nallatamby, "Estimation of zero-field activation energy for traps in Fe- and C-doped GaN-based HEMTs," IEEE Trans. Electron Devices, vol. 71, pp. 1626-1632, 2023, DOI: 10.1109/TED.2023.3302280
P. V. Raja, C. Raynaud, B. Asllani, H. Morel, D. Planson, "Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes," J. Mater. Sci.: Mater. Electron, vol. 34, Art. no. 1383, 2023, DOI: 10.1007/s10854-023-10813-z
P. V. Raja, J.-C. Nallatamby, M. Bouslama, J. C. Jacquet, R. Sommet, C. Chang, and B. Lambert, "HTRB stress effects on static and dynamic characteristics of 0.15 µm AlGaN/GaN HEMTs," IEEE Trans. Microw. Theory Techn., vol. 71, pp.1957-1966, 2023, DOI: 10.1109/TMTT.2022.3222190
P. V. Raja, C. Raynaud, C. Sonneville, H. Morel, et al., H. Maher, Y. Cordier, and D. Planson, "Deep-level transient Fourier spectroscopy (DLTFS) and isothermal transient spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes," Micro and Nano Structures, vol. 172, Art. no. 207433, 2022, DOI: 10.1016/j.micrna.2022.207433
P. V. Raja, C. Raynaud, C. Sonneville, H. Morel, et al., H. Maher, Y. Cordier, and D. Planson, "Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes," Microelectronics Journal, vol. 128, Art. no. 105575, 2022, DOI: 10.1016/j.mejo.2022.105575
P. V. Raja, E. Dupouy, M. Bouslama, R. Sommet, J. -C. Nallatamby, “Estimation of trapping Induced dynamic reduction in 2DEG density of GaN-based HEMTs by gate-lag DCT technique,” IEEE Trans. Electron Devices, vol. 9, pp. 4864-4869, 2022, DOI: 10.1109/TED.2022.3193650
P. V. Raja, N. K. Subramani, F. Gaillard, M. Bouslama, R. Sommet, J. -C. Nallatamby, “Identification of buffer and surface traps in Fe-doped AlGaN/GaN HEMT by Y21 frequency dispersion properties,” Electronics, vol. 10, Art. no. 3096, 2021, DOI: 10.3390/electronics10243096
M. Bouslama, P. V. Raja, R. Sommet, J. -C. Nallatamby, “Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations,” AIP Adv., vol. 11, Art. no. 125316, 2021, DOI: 10.1063/5.0064493
A. Brovko, O. Amzallag, A. Adelberg, L. Chernyak, P. V. Raja, A. Ruzin, “Effect of oxygen plasma treatment on Cd1-xZnxTe material and devices,” Nucl. Instrum. Methods Phys. Res. A, vol. 1004, Art. no. 165343, 2021, DOI: 10.1016/j.nima.2021.165343
P. V. Raja, J. -C. Nallatamby, N. DasGupta, A. DasGupta, “Trapping effects on AlGaN/GaN HEMT characteristics,” Solid-State Electron. vol. 176, Art. no. 107929, 2021, DOI: 10.1016/j.sse.2020.107929
P. V. Raja, M. Bouslama, S. Sarkar, K. R. Pandurang, J. -C. Nallatamby, N. DasGupta, A. DasGupta, “Deep-level traps in AlGaN/GaN and AlInN/GaN based HEMTs with different buffer doping technologies,” IEEE Trans. Electron Devices, vol. 67, pp. 2304-2310, 2020, DOI: 10.1109/TED.2020.2988439
P. V. Raja and N. V. L. N. Murty, “Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics,” J. Semicond., vol. 40, Art. no. 022804, 2019, DOI: 10.1088/1674-4926/40/2/022804
P. V. Raja and N. V. L. N. Murty, “Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range,” Microelectron. Rel., vol. 87, pp. 213-221, 2018, DOI: 10.1016/j.microrel.2018.06.021
P. V. Raja and N. V. L. N. Murty, “Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC schottky barrier diodes,” J. Appl. Phys., vol. 123, Art. no. 161536, 2018, DOI: 10.1063/1.5003068
P. V. Raja and N. V. L. N. Murty, “D-T Neutron and 60Co-gamma irradiation effects on HPSI 4H-SiC photoconductors,” IEEE Trans. Nucl. Sci., vol. 65, pp. 558-565, 2018, DOI: 10.1109/TNS.2017.2778299
P. V. Raja and N. V. L. N. Murty, “Electrically active defects in neutron-irradiated HPSI 4H-SiC x-ray detectors investigated by ZB-TSC technique,” IEEE Trans. Nucl. Sci., vol. 64, pp. 2377-2385, 2017, DOI: 10.1109/TNS.2017.2720192
P. V. Raja, J. Akhtar, C. V. S Rao, S. Vala, M. Abhangi, N. V. L. N. Murty, “Spectroscopic performance studies of 4H-SiC detectors for fusion alpha-particle diagnostics,” Nucl. Instrum. Methods Phys. Res. A, vol. 869, pp. 118-127, 2017, https://doi.org/10.1016/j.nima.2017.07.017
P. V. Raja, J. Akhtar, S. Vala, M. Abhangi, N. V. L. N. Murty, “Performance of epitaxial and HPSI 4H-SiC detectors for plasma x-ray imaging systems,” J. Instrum., vol. 12, Art. no. P08006, 2017, DOI: 10.1088/1748-0221/12/08/P08006
P. V. Raja, C. V. S Rao, N. V. L. N. Murty, “Numerical simulation of 60Co-gamma irradiation effects on electrical characteristics of n-type FZ silicon x-ray detectors,” Nucl. Instrum. Methods Phys. Res. B, vol. 379, pp. 23-27, 2016, DOI: 10.1016/j.nimb.2016.04.052
P. V. Raja, N. V. L. N. Murty, C. V. S. Rao, M. Abhangi, “Numerical simulation of 14.1MeV neutron irradiation effects on electrical characteristics of PIPS detector for plasma x-ray tomography,” IEEE Trans. Nucl. Sci., vol. 62, pp. 1634-1641, 2015, DOI: 10.1109/TNS.2015.2445322
P. V. Raja, N. V. L. N. Murty, C. V. S. Rao, M. Abhangi, “Investigation of x-ray spectral response of D-T fusion produced neutron irradiated PIPS detectors for plasma x-ray diagnostics,” J. Instrum., vol. 10, Art. no. P10018, 2015, DOI: 10.1088/1748-0221/10/10/P10018

INTERNATIONAL CONFERENCES

S. Kumar, R. Sommet, J.-C. Nallatamby, Florent Gaillard, and P. V. Raja, "Suppressing Short-Channel Effects in 100nm AlN/GaN HEMTs using Gate-connected Field-Plate," oral presentation, IEEE ICEE-2025 conference, Bangalore, Dec. 2025.
S. Kumari, B. Asllani, C. Raynaud, P. Brosselard, D. Planson, P. V. Raja, "Performance-Limiting Traps in High-Power 4H-SiC PiN Diodes Identified by Integrated DLTFS and TCAD Investigations," oral presentation, IEEE ICEE-2025 conference, Bangalore, Dec. 2025.
V. Jaiswal, and P. V. Raja, "Epilayer Doping-Dependent Radiation Hardness of 4H-SiC SBD Detector," oral presentation, IEEE ICEE-2025 conference, Bangalore, Dec. 2025.
V. V. Painter, J.-C. Nallatamby, R. Sommet, and P. V. Raja, "Passivation Layer Thickness-Dependent Thermal Dissipation Properties of Source-Connected Field-Plated AlGaN/GaN HEMT," poster presentation, IEEE ICEE-2025 conference, Bangalore, Dec. 2025.
V. Jaiswal, and P. V. Raja, "Development of TCAD-based Neutron Radiation Damage Model for 4HSiC Alpha-Particle Detectors," Frontiers in Gamma Ray Spectroscopy, TIFR, Mumbai, Mar 2025.
V. Jaiswal, and P. V. Raja, "Novel TCAD Approach Precisely Simulating Charge Collection Efficiency of 4H-SiC Alpha-particle Detectors," 68th DAE Solid State Physics Symposium, Mumbai, Dec 2024.
P. V. Raja, V. V. Painter, R. Sommet, and J.-C. Nallatamby "Inspection of Trapping and Detrapping Dynamics in Fe- and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy," oral presentation, IEEE EDTM-2024 conference, Bangalore, Mar. 2024.
V. V. Painter, J.-C. Nallatamby, R. Sommet, and P. V. Raja, "Estimation of thermal resistance (RTH) and thermal time constant for AlGaN/GaN HEMTs using TCAD simulation," oral presentation, IWPSD-2023 conference, IIT Madras, Dec. 2023.
P. V. Raja, C. Raynaud, B. Asllani, H. Morel, D. Planson, "Electrically active traps in bipolar 10 kV 8 A silicon carbide (SiC) PiN diodes," International Symposium on Semiconductor Materials and Devices-2022 (ISSMD-2022), Bhubaneswar, 2022.
J. A. S. Dos Santos, P. V. Raja, M. Bouslama, R. Sommet, J.-C. Nallatamby, “Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations,” European Microwave Conference 2022 (EuMiC-2022), Milan, Italy, 2022.
P. V. Raja, J.-C. Nallatamby, M. Bouslama, J. C. Jacquet, R. Sommet, C. Chang, B. Lambert, “HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance”, IEEE MTT-S NEMO2022, Limoges, France, 2022.
E. Dupouy, P. V. Raja, F. Gaillard, R. Sommet, J.-C. Nallatamby, “Trap Characterization in InAlN/GaN and AlN/GaN based HEMTs with Fe- and C-doped Buffers,” European Microwave Conference 2021 (EuMiC-2021), London, UK, 2021.
P. V. Raja, M. Bouslama, S. Sarkar, K. R. Pandurang, K. Narang, J. -C. Nallatamby, N. DasGupta and A. DasGupta, “Characterization of deep-level traps in AlInN/GaN HEMT by I-DLTS and output admittance dispersion,” 20th International Workshop on Physics of Semiconductor Devices (IWPSD-2019), Kolkata, India, 2019.
P. V. Raja, N. DasGupta, and A. DasGupta, “Simulation of self-heating and bulk trapping effects on drain current static and transient characteristics of AlGaN/GaN HEMTs,” IEEE 4th International Conference on Emerging Electronics (ICEE-2018), Bangalore, India, 2018.
P. V. Raja, V. Kumar, C. V. S. Rao, and N. V. L. N. Murty, “Electrical characteristics and UV response of 4H-SiC Schottky diodes and bulk photoconductors,” 18th International Workshop on Physics of Semiconductor Devices (IWPSD-2015), Bangalore, India, 2015.
P. V. Raja, N. V. L. N. Murty, C. V. S. Rao, and M. Abhangi, “Effect of fusion-produced neutron irradiation on x-ray spectral characteristics of PIPS detectors,” Radiation Effects Data Workshop (REDW), IEEE Nuclear & Space Radiation Effects Conference (NSREC), Paris, France, 2014.

INVITED TALKS

P. V. Raja*, S. Kumari, B. Asllani, C. Raynaud, D. Planson, P. Brosselard, "Acceptor Incomplete Ionization and Carrier Trapping Effects in 4H-SiC PiN Power Diodes," IEEE 7th International Conference on Emerging Electronics (ICEE-2025), Bangalore, India, Dec. 2025.
P. V. Raja*, V. V. Painter, J. -C. Nallatamby, R. Sommet, "Gate-connected and Source-connected field-plate influences on thermal resistance of AlGaN/GaN HEMTs," Symposium on Microelectronics and MEMS in Honor of Prof. Amitava DasGupta, IIT Madras, Chennai, Jun. 2025.
P. V. Raja* and V. Jasiwal, "Spectroscopic Performance and TCAD Device Model for 4H-Silicon Carbide (4H-SiC) Radiation Detectors," Seminar, TIFR, Mumbai, Feb. 2025.
P. V. Raja*, V. V. Painter, J. -C. Nallatamby, R. Sommet, "Field-plate Influence on Thermal Resistance and DCT simulations for Fe-doped AlGaN/GaN HEMTs," Workshop on GaN Research and Development, IIT Madras, Chennai, Sep. 2024.
P. V. Raja*, R. Sommet, J.-C. Nallatamby, “Trap Parameter Evaluation and HTRB Stress Effects in GaN-based HEMT,” Indo-French Workshop on Microwave and Photonic Technologies (IWMP), IIT Madras, Chennai, Feb. 2023, https://www.youtube.com/watch?v=J98kzmSUMnI
P. V. Raja*, B. Asllani, C. Raynaud, H. Morel, L. V. Phung, D. Planson, "Design and Characterization of High Power SiC PiN Diode Rectifiers," IEEE 6th International Conference on Emerging Electronics (ICEE-2022), Bangalore, India, Dec. 2022.

HAL Archives

P. V. Raja, "Deep-Level Defects in CdZnTe and CdMnTe Detectors Identified by Photo-Induced Current Transient Spectroscopy (PICTS) and Thermally Simulated Current (TSC) Techniques," Postdoc Report, Tel Aviv University, 2020. https://hal.archives-ouvertes.fr/hal-03599211/
P. V. Raja, “Performance Studies of Silicon and 4H-Silicon Carbide Radiation Detectors for Fusion Plasma Diagnostics,” PhD Thesis, IIT Bhubaneswar, 2019. https://hal.archives-ouvertes.fr/tel-03602285/
P. V. Raja, E. Dupouy, R. Sommet, J.-C. Nallatamby, "Evaluation of Trap Signatures in Fe-doped 0.12 µm InAlN/GaN HEMTs by DCT, Y22 and Y21 Techniques," 6th IEEE International Conference on Emerging Electronics (ICEE-2022), Dec 2022, Bangalore, India. https://hal.science/hal-04180970
P. V. Raja, "Forward and Reverse Current Transport Models in Schottky Barrier Diodes," Report, IIT Dharwad, 2024. https://hal.science/hal-04583749/