JOURNAL PUBLICATIONS
V. V. Painter, J. -C. Nallatamby, R. Sommet, P. V. Raja, "Source-connected and gate-connected field-plate influence on thermal resistance (RTH) of AlGaN/GaN HEMT with varying passivation thickness," Microelectronics Reliability (under review).
V. Jaiswal, and P. V. Raja, "Development and validation of TCAD-based neutron radiation damage model for 4H-SiC SBD alpha-particle Detectors," IEEE Trans. Nucl. Sci. (revision submitted).
V. V. Painter, R. Sommet, C. Chang, V. D. G. Brunel, F. Gaillard, J. -C. Nallatamby, P. V. Raja, "Fe-related trapping and de-trapping dynamics in AlGaN/GaN HEMTs inspected by drain-lag, gate-lag, and double-pulsed DCT spectroscopy," IEEE Trans. Device Mater. Reliab., DOI: 10.1109/TDMR.2025.3602857, 2025.
S. Kumari, P. Brosselard, D. Planson, P. V. Raja, "Modified TCAD simulation approach to investigate electron trapping effects in 4H-SiC JBS diodes," Microelectron. Rel., vol. 173, Art. no. 115876, 2025.
V. V. Painter, J. -C. Nallatamby, R. Sommet, P. V. Raja, "A new method to estimate surface donor density (NTD) in AlGaN/GaN HEMT by validated DCT simulations," Physica Status Solidi - RRL, vol. 2500170, 2025.
V. V. Painter, R. Sommet, C. Chang, V. D. G. Brunel, F. Gaillard, J. -C. Nallatamby, P. V. Raja, "Fe-doping starting depth impacts on static and transient characteristics of 0.15 μm AlGaN/GaN HEMT," Micro and Nanostructures, vol. 205, Art. no. 208197, 2025.
K. S. Pawar, V. K. Tadepalli, V. V. Painter, R. Sommet, A. Chakravorty, P. V. Raja, "Maximum and average thermal resistance for GaN-based HEMTs on SiC, Si, and Sapphire substrates," Solid-State Electronics, vol. 227, Art. no. 109121, 2025.
V. Jaiswal, and P. V. Raja, "Accurate TCAD simulation model for high-performance 4H-SiC SBD alpha-particle Detectors," IEEE Trans. Nucl. Sci., vol. 72, pp. 3-10, 2025.
V. V. Painter, J. -C. Nallatamby, R. Sommet, P. V. Raja, "Influence of field-plate, gate width and voltage dependence of Thermal Resistance (RTH) of AlGaN/GaN HEMT," IEEE Trans. Electron Devices, vol. 71, pp. 6552 – 6559, 2024. 2024.
S. Kumari, R. Singh, S. Kumar,................, P. V. Raja, "Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN, and AlGaN/GaN epitaxial substrates," Semicond. Sci. Technol., vol. 39, Art. no. 065016, 2024.
P. V. Raja, V. V. Painter, E. Dupouy, R. Sommet, J. -C. Nallatamby, "Estimation of zero-field activation energy for traps in Fe- and C-doped GaN-based HEMTs," IEEE Trans. Electron Devices, vol. 71, pp. 1626-1632, 2023.
P. V. Raja, C. Raynaud, B. Asllani, H. Morel, D. Planson, "Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes," J. Mater. Sci.: Mater. Electron, vol. 34, Art. no. 1383, 2023.
P. V. Raja, J.-C. Nallatamby, M. Bouslama, J. C. Jacquet, R. Sommet, C. Chang, and B. Lambert, "HTRB stress effects on static and dynamic characteristics of 0.15 µm AlGaN/GaN HEMTs," IEEE Trans. Microw. Theory Techn., vol. 71, pp.1957-1966, 2023.
P. V. Raja, C. Raynaud, C. Sonneville, H. Morel,....................H. Maher, Y. Cordier, and D. Planson, "Deep-level transient Fourier spectroscopy (DLTFS) and isothermal transient spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes," Micro and Nano Structures, vol. 172, Art. no. 207433, 2022.
P. V. Raja, C. Raynaud, C. Sonneville, H. Morel,....................H. Maher, Y. Cordier, and D. Planson, "Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes," Microelectronics Journal, vol. 128, Art. no. 105575, 2022.
P. V. Raja, E. Dupouy, M. Bouslama, R. Sommet, J. -C. Nallatamby, “Estimation of trapping Induced dynamic reduction in 2DEG density of GaN-based HEMTs by gate-lag DCT technique,” IEEE Trans. Electron Devices, vol. 9, pp. 4864-4869, 2022.
P. V. Raja, N. K. Subramani, F. Gaillard, M. Bouslama, R. Sommet, J. -C. Nallatamby, “Identification of buffer and surface traps in Fe-doped AlGaN/GaN HEMT by Y21 frequency dispersion properties,” Electronics, vol. 10, Art. no. 3096, 2021.
M. Bouslama, P. V. Raja, R. Sommet, J. -C. Nallatamby, “Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations,” AIP Adv., vol. 11, Art. no. 125316, 2021.
A. Brovko, O. Amzallag, A. Adelberg, L. Chernyak, P. V. Raja, A. Ruzin, “Effect of oxygen plasma treatment on Cd1-xZnxTe material and devices,” Nucl. Instrum. Methods Phys. Res. A, vol. 1004, Art. no. 165343, 2021.
P. V. Raja, J. -C. Nallatamby, N. DasGupta, A. DasGupta, “Trapping effects on AlGaN/GaN HEMT characteristics,” Solid-State Electron. vol. 176, Art. no. 107929, 2021.
P. V. Raja, M. Bouslama, S. Sarkar, K. R. Pandurang, J. -C. Nallatamby, N. DasGupta, A. DasGupta, “Deep-level traps in AlGaN/GaN and AlInN/GaN based HEMTs with different buffer doping technologies,” IEEE Trans. Electron Devices, vol. 67, pp. 2304-2310, 2020.
P. V. Raja and N. V. L. N. Murty, “Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics,” J. Semicond., vol. 40, Art. no. 022804, 2019.
P. V. Raja and N. V. L. N. Murty, “Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range,” Microelectron. Rel., vol. 87, pp. 213-221, 2018.
P. V. Raja and N. V. L. N. Murty, “Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC schottky barrier diodes,” J. Appl. Phys., vol. 123, Art. no. 161536, 2018.
P. V. Raja and N. V. L. N. Murty, “Effects of D-T Neutron and 60Co-gamma irradiations on HPSI 4H-SiC photoconductors,” IEEE Trans. Nucl. Sci., vol. 65, pp. 558-565, 2018.
P. V. Raja and N. V. L. N. Murty, “Electrically active defects in neutron-irradiated HPSI 4H-SiC x-ray detectors investigated by ZB-TSC technique,” IEEE Trans. Nucl. Sci., vol. 64, pp. 2377-2385, 2017.
P. V. Raja, J. Akhtar, C. V. S Rao, S. Vala, M. Abhangi, N. V. L. N. Murty, “Spectroscopic performance studies of 4H-SiC detectors for fusion alpha-particle diagnostics,” Nucl. Instrum. Methods Phys. Res. A, vol. 869, pp. 118-127, 2017.
P. V. Raja, J. Akhtar, S. Vala, M. Abhangi, N. V. L. N. Murty, “Performance of epitaxial and HPSI 4H-SiC detectors for plasma x-ray imaging systems,” J. Instrum., vol. 12, Art. no. P08006, 2017.
P. V. Raja, C. V. S Rao, N. V. L. N. Murty, “Numerical simulation of 60Co-gamma irradiation effects on electrical characteristics of n-type FZ silicon x-ray detectors,” Nucl. Instrum. Methods Phys. Res. B, vol. 379, pp. 23-27, 2016.
P. V. Raja, N. V. L. N. Murty, C. V. S. Rao, M. Abhangi, “Numerical simulation of 14.1MeV neutron irradiation effects on electrical characteristics of PIPS detector for plasma x-ray tomography,” IEEE Trans. Nucl. Sci., vol. 62, pp. 1634-1641, 2015.
P. V. Raja, N. V. L. N. Murty, C. V. S. Rao, M. Abhangi, “Investigation of x-ray spectral response of D-T fusion produced neutron irradiated PIPS detectors for plasma x-ray diagnostics,” J. Instrum., vol. 10, Art. no. P10018, 2015.