JOURNAL PUBLICATIONS

1. V. Jaiswal, and P. V. Raja, "Accurate TCAD Simulation Model for high-performance 4H-SiC SBD alpha-particle Detectors," under preparation.

2. S. Kumari, D. Planson, H. Morel, P. Brosselard, and P. V. Raja, "Physics-based TCAD simulation model for 4H-SiC Junction Barrier Schottky (JBS) diodes," under preparation. 

3. V. V. Painter, J. -C. Nallatamby, R. Sommet, P. V. Raja, "Trapping and detrapping investigation in AlGaN/GaN HEMT using DCT spectroscopy and Y-parameters," under preparation.

4. V. V. Painter, J. -C. Nallatamby, R. Sommet, P. V. Raja, "Influence of field-plate, gate width and voltage dependence of Thermal Resistance (RTH) of AlGaN/GaN HEMT," IEEE Trans. Electron Devices (under revision).

5. S. Kumari, R. Singh, S. Kumar,................, P. V. Raja, "Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN, and AlGaN/GaN epitaxial substrates," Semicond. Sci. Technol., vol. 39, Art. no. 065016, 2024. 

6. P. V. Raja, V. V. Painter, E. Dupouy, R. Sommet, J. -C. Nallatamby, "Estimation of zero-field activation energy for traps in Fe- and C-doped GaN-based HEMTs," IEEE Trans. Electron Devices, vol. 71, pp. 1626-1632, 2023.

7. P. V. Raja, C. Raynaud, B. Asllani, H. Morel, D. Planson, "Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes," J. Mater. Sci.: Mater. Electron, vol. 34, Art. no. 1383, 2023.  

8. P. V. Raja, J.-C. Nallatamby, M. Bouslama, J. C. Jacquet, R. Sommet, C. Chang, and B. Lambert, "HTRB stress effects on static and dynamic characteristics of 0.15 µm AlGaN/GaN HEMTs," IEEE Trans. Microw. Theory Techn., vol. 71, pp.1957-1966, 2023.

9. P. V. Raja, C. Raynaud, C. Sonneville, H. Morel,....................H. Maher, Y. Cordier, and D. Planson, "Deep-level transient Fourier spectroscopy (DLTFS) and isothermal transient spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes," Micro and Nano Structures, vol. 172, Art. no. 207433, 2022.

10. P. V. Raja, C. Raynaud, C. Sonneville, H. Morel,....................H. Maher, Y. Cordier, and D. Planson, "Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes," Microelectronics Journal, vol. 128, Art. no. 105575, 2022.

11. P. V. Raja, E. Dupouy, M. Bouslama, R. Sommet, J. -C. Nallatamby, “Estimation of trapping Induced dynamic reduction in 2DEG density of GaN-based HEMTs by gate-lag DCT technique,” IEEE Trans. Electron Devices, vol. 9, pp. 4864-4869, 2022.

12. P. V. Raja, N. K. Subramani, F. Gaillard, M. Bouslama, R. Sommet, J. -C. Nallatamby, “Identification of buffer and surface traps in Fe-doped AlGaN/GaN HEMT by Y21 frequency dispersion properties,” Electronics, vol. 10, Art. no. 3096, 2021.     

13. M. Bouslama, P. V. Raja, R. Sommet, J. -C. Nallatamby, “Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations,” AIP Adv., vol. 11, Art. no. 125316, 2021.    

14. A. Brovko, O. Amzallag, A. Adelberg, L. Chernyak, P. V. Raja, A. Ruzin, “Effect of oxygen plasma treatment on Cd1-xZnxTe material and devices,” Nucl. Instrum. Methods Phys. Res. A, vol. 1004, Art. no. 165343, 2021.

15. P. V. Raja, J. -C. Nallatamby, N. DasGupta, A. DasGupta, “Trapping effects on AlGaN/GaN HEMT characteristics,” Solid-State Electron. vol. 176, Art. no. 107929, 2021.

16. P. V. Raja, M. Bouslama, S. Sarkar, K. R. Pandurang, J. -C. Nallatamby, N. DasGupta, A. DasGupta, “Deep-level traps in AlGaN/GaN and AlInN/GaN based HEMTs with different buffer doping technologies,” IEEE Trans. Electron Devices, vol. 67, pp. 2304-2310, 2020.

17. P. V. Raja and N. V. L. N. Murty, “Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics,” J. Semicond., vol. 40, Art. no. 022804, 2019.

18. P. V. Raja and N. V. L. N. Murty, “Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range,” Microelectron. Rel., vol. 87, pp. 213-221, 2018.

19. P. V. Raja and N. V. L. N. Murty, “Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC schottky barrier diodes,” J. Appl. Phys., vol. 123, Art. no. 161536, 2018.

20. P. V. Raja and N. V. L. N. Murty, “Effects of D-T Neutron and 60Co-gamma irradiations on HPSI 4H-SiC photoconductors,” IEEE Trans. Nucl. Sci., vol. 65, pp. 558-565, 2018.

21. P. V. Raja and N. V. L. N. Murty, “Electrically active defects in neutron-irradiated HPSI 4H-SiC x-ray detectors investigated by ZB-TSC technique,” IEEE Trans. Nucl. Sci., vol. 64, pp. 2377-2385, 2017.

22. P. V. Raja, J. Akhtar, C. V. S Rao, S. Vala, M. Abhangi, N. V. L. N. Murty, “Spectroscopic performance studies of 4H-SiC detectors for fusion alpha-particle diagnostics,” Nucl. Instrum. Methods Phys. Res. A, vol. 869, pp. 118-127, 2017.

23. P. V. Raja, J. Akhtar, S. Vala, M. Abhangi, N. V. L. N. Murty, “Performance of epitaxial and HPSI 4H-SiC detectors for plasma x-ray imaging systems,” J. Instrum., vol. 12, Art. no. P08006, 2017.

24. P. V. Raja, C. V. S Rao, N. V. L. N. Murty, “Numerical simulation of 60Co-gamma irradiation effects on electrical characteristics of n-type FZ silicon x-ray detectors,” Nucl. Instrum. Methods Phys. Res. B, vol. 379, pp. 23-27, 2016.

25. P. V. Raja, N. V. L. N. Murty, C. V. S. Rao, M. Abhangi, “Numerical simulation of 14.1MeV neutron irradiation effects on electrical characteristics of PIPS detector for plasma x-ray tomography,” IEEE Trans. Nucl. Sci., vol. 62, pp. 1634-1641, 2015.

26. P. V. Raja, N. V. L. N. Murty, C. V. S. Rao, M. Abhangi, “Investigation of x-ray spectral response of D-T fusion produced neutron irradiated PIPS detectors for plasma x-ray diagnostics,” J. Instrum., vol. 10, Art. no. P10018, 2015.

INTERNATIONAL CONFERENCES

1. P. V. Raja, V. V. Painter, R. Sommet, and J.-C. Nallatamby "Inspection of Trapping and Detrapping Dynamics in Fe- and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy," oral presentation, IEEE EDTM-2024 conference, Bangalore, Mar. 2024. 

2. V. V. Painter, J.-C. Nallatamby, R. Sommet, and P. V. Raja, "Estimation of thermal resistance (RTH) and thermal time constant for AlGaN/GaN HEMTs using TCAD simulation," oral presentation, IWPSD-2023 conference, IIT Madras, Dec. 2023. 

3. P. V. Raja, C. Raynaud, B. Asllani, H. Morel, D. Planson, "Electrically active traps in bipolar 10 kV 8 A silicon carbide (SiC) PiN diodes," International Symposium on Semiconductor Materials and Devices-2022 (ISSMD-2022), Bhubaneswar, 2022.  

4. J. A. S. Dos Santos, P. V. Raja, M. Bouslama, R. Sommet, J.-C. Nallatamby, “Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations,” European Microwave Conference 2022 (EuMiC-2022), Milan, Italy, 2022.

5. P. V. Raja, J.-C. Nallatamby, M. Bouslama, J. C. Jacquet, R. Sommet, C. Chang, B. Lambert, “HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance”, IEEE MTT-S NEMO2022, Limoges, France, 2022.

6. E. Dupouy, P. V. Raja, F. Gaillard, R. Sommet, J.-C. Nallatamby, “Trap Characterization in InAlN/GaN and AlN/GaN based HEMTs with Fe- and C-doped Buffers,” European Microwave Conference 2021 (EuMiC-2021), London, UK, 2021.

7. P. V. Raja, M. Bouslama, S. Sarkar, K. R. Pandurang, K. Narang, J. -C. Nallatamby, N. DasGupta and A. DasGupta, “Characterization of deep-level traps in AlInN/GaN HEMT by I-DLTS and output admittance dispersion,” 20th International Workshop on Physics of Semiconductor Devices (IWPSD-2019), Kolkata, India, 2019.

8. P. V. Raja, N. DasGupta, and A. DasGupta, “Simulation of self-heating and bulk trapping effects on drain current static and transient characteristics of AlGaN/GaN HEMTs,” IEEE 4th International Conference on Emerging Electronics (ICEE-2018), Bangalore, India, 2018.

9. P. V. Raja, V. Kumar, C. V. S. Rao, and N. V. L. N. Murty, “Electrical characteristics and UV response of 4H-SiC Schottky diodes and bulk photoconductors,” 18th International Workshop on Physics of Semiconductor Devices (IWPSD-2015), Bangalore, India, 2015.

10. P. V. Raja, N. V. L. N. Murty, C. V. S. Rao, and M. Abhangi, “Effect of fusion-produced neutron irradiation on x-ray spectral characteristics of PIPS detectors,” Radiation Effects Data Workshop (REDW), IEEE Nuclear & Space Radiation Effects Conference (NSREC), Paris, France, 2014.

INVITED TALKS

1. P. V. Raja*, B. Asllani, C. Raynaud, H. Morel, L. V. Phung, D. Planson, "Design and Characterization of High Power SiC PiN Diode Rectifiers," IEEE 6th International Conference on Emerging Electronics (ICEE-2022), Bangalore, India, Dec. 2022.

2.  J.-C Nallatamby*, P. V. Raja, R. Sommet,  N. DasGupta, A. DasGupta, "Comprehensive Trap Characterization and TCAD Physics-based Simulation Studies for Analyzing Trapping Mechanisms in GaN HEMTs," Winter School on RF Technology for Wireless Communications and Sensing, Aveiro, Portugal, 2022.

3.  P. V. Raja*, R. Sommet, J.-C. Nallatamby, “Trap Parameter Evaluation and HTRB Stress Effects in GaN-based HEMT,” Indo-French Workshop on Microwave and Photonic Technologies (IWMP), IIT Madras, Chennai, Feb. 2023.  

HAL Archives 

1.  P. V. Raja, "Deep-Level Defects in CdZnTe and CdMnTe Detectors Identified by Photo-Induced Current Transient Spectroscopy (PICTS) and Thermally Simulated Current (TSC) Techniques," Postdoc Report, Tel Aviv University, 2020. https://hal.archives-ouvertes.fr/hal-03599211/

2.  P. V. Raja, “Performance Studies of Silicon and 4H-Silicon Carbide Radiation Detectors for Fusion Plasma Diagnostics,” PhD Thesis, IIT Bhubaneswar, 2019. https://hal.archives-ouvertes.fr/tel-03602285/

3. P. V. Raja, E. Dupouy, R. Sommet, J.-C. Nallatamby, "Evaluation of Trap Signatures in Fe-doped 0.12 µm InAlN/GaN HEMTs by DCT, Y22 and Y21 Techniques," 6th IEEE International Conference on Emerging Electronics (ICEE-2022), Dec 2022, Bangalore, India. https://hal.science/hal-04180970