Foreign Research Visit (Collaborative Projects)

He worked in different state-of-the-art manufacturing and metrology facilities (Sputtering, ALD, XPS, XRD, AFM, SEM, TEM, and Cleanroom) at the University of Liverpool and the Daresbury Lab, UK. His collaborative work is the result of four research visits (Honorary Research Student) to the University of Liverpool, which were supported by the following UK-India joint research projects.

Project I: EPSRC Project No. EP/P510981/1, EPSRC, UK  

-Experimental band alignment and electrical characterization of different high-k dielectrics on GaN for high electron mobility applications.

- Physical characterization of HfOx and Hf/HfOx layers for RRAM applications.

Project II: UGC-UKIERI III project number IND/CONT/G/17-18/18 

-Experimental band alignment and electrical characterization of ALD deposited Ternary oxides (Al-Ga-O and Ti-Al-O) on GaN for high electron mobility applications.

- Physical characterization of sputtered Hf-Al-O layers for RRAM applications.

-Physical characterisation of sputtered Al2O3/HfO2 bi-layers for RRAM applications.

Project III: GCRF project “Nanolaminate scandium-based stack for GaN power devices”

- Experimental band alignment and electrical characterization of ALD deposited Ternary oxides (Sc-Al-O) on GaN for high electron mobility applications.