Dr. Partha Das, PhD (NIT Durgapur), MIETE
Assistant professor, Electronics Engineering Department (ECED)
Dr. Partha Das, PhD (NIT Durgapur), MIETE
Assistant professor, Electronics Engineering Department (ECED)
Sardar Vallabhbhai National Institute of Technology Surat (SVNIT Surat)
Sardar Vallabhbhai National Institute of Technology Surat (SVNIT Surat)
Mobile No.: +918918746469
Mobile No.: +918918746469
+917384235047
+917384235047
~About Me~
~About Me~
Dr. Partha Das is currently serving as an Assistant Professor in the Department of Electronics Engineering at Sardar Vallabhbhai National Institute of Technology (SVNIT), Surat, Gujarat, India. He received his Ph.D. in Electronics and Communication Engineering from the National Institute of Technology (NIT), Durgapur, India in 2023. He did his M.Tech with a specialization in VLSI from the Institute of Radiophysics and Electronics (IRPE), Rajabazar Science College, Calcutta University, West Bengal. He got his B.Tech degree in Electronics and Communication Engineering from Jalpaiguri Government Engineering College, West Bengal. During his PhD, he worked in different state-of-the-art manufacturing and metrology facilities (Sputtering, ALD, XPS, XRD, AFM, SEM, TEM, and Cleanroom) at the University of Liverpool and the Daresbury Lab, UK. His collaborative work is the result of four research visits (as an honorary research student) to the University of Liverpool, which was funded by different UK-INDIA joint research projects, like the Engineering and Physical Sciences Research Council (EPSRC Project No. EP/P510981/1), Global Challenges Research Fund (GCRF project named “Nanolaminate scandium-based stack for GaN power devices”), University Grants Commission (UGC Project F.No.184-1/2018(IC), UK India Education and Research Initiative (UKIERI Project No. IND/CONT/G/17-18/18).
Dr. Partha Das is currently serving as an Assistant Professor in the Department of Electronics Engineering at Sardar Vallabhbhai National Institute of Technology (SVNIT), Surat, Gujarat, India. He received his Ph.D. in Electronics and Communication Engineering from the National Institute of Technology (NIT), Durgapur, India in 2023. He did his M.Tech with a specialization in VLSI from the Institute of Radiophysics and Electronics (IRPE), Rajabazar Science College, Calcutta University, West Bengal. He got his B.Tech degree in Electronics and Communication Engineering from Jalpaiguri Government Engineering College, West Bengal. During his PhD, he worked in different state-of-the-art manufacturing and metrology facilities (Sputtering, ALD, XPS, XRD, AFM, SEM, TEM, and Cleanroom) at the University of Liverpool and the Daresbury Lab, UK. His collaborative work is the result of four research visits (as an honorary research student) to the University of Liverpool, which was funded by different UK-INDIA joint research projects, like the Engineering and Physical Sciences Research Council (EPSRC Project No. EP/P510981/1), Global Challenges Research Fund (GCRF project named “Nanolaminate scandium-based stack for GaN power devices”), University Grants Commission (UGC Project F.No.184-1/2018(IC), UK India Education and Research Initiative (UKIERI Project No. IND/CONT/G/17-18/18).
He investigated the interface of different high-k dielectrics (grown by Sputtering and ALD systems in the Department of Engineering, University of Liverpool) and GaN for enhancement mode high electron mobility transistor (E-HEMT) applications. His PhD research proposes the best routes to passivate the dielectric/GaN interface using different physical and electrical characterization techniques. Furthermore, his research aims to tailor the doping of alumina (Al2O3) with Ti and Ga to achieve ternary dielectric materials of sufficiently high permittivity and large band offsets with GaN, so that it can be used for threshold voltage control in HEMT devices. He worked with different surface science equipment in the "Nanomaterials Characterisation Lab", Stephenson Institute for Renewable Energy, Department of Physics, University of Liverpool, UK. His research interests include GaN-based devices (HEMT), high-k oxide/GaN interface study, resistive memory devices (RRAM), rectenna for infrared energy harvesting, modeling and simulation of semiconductor devices, etc.
He investigated the interface of different high-k dielectrics (grown by Sputtering and ALD systems in the Department of Engineering, University of Liverpool) and GaN for enhancement mode high electron mobility transistor (E-HEMT) applications. His PhD research proposes the best routes to passivate the dielectric/GaN interface using different physical and electrical characterization techniques. Furthermore, his research aims to tailor the doping of alumina (Al2O3) with Ti and Ga to achieve ternary dielectric materials of sufficiently high permittivity and large band offsets with GaN, so that it can be used for threshold voltage control in HEMT devices. He worked with different surface science equipment in the "Nanomaterials Characterisation Lab", Stephenson Institute for Renewable Energy, Department of Physics, University of Liverpool, UK. His research interests include GaN-based devices (HEMT), high-k oxide/GaN interface study, resistive memory devices (RRAM), rectenna for infrared energy harvesting, modeling and simulation of semiconductor devices, etc.