The history of field effect transistors (FETs) dates back to 1925, when Julius Lillenfield invented both the junction FET and the insulated gate FET. Both of these devices currently dominate electronics technology. This chapter is an introduction to the theory of junction and insulated gate FETs.
At the end of this module, you should be able to:
Going through this module can be both a fun and a meaningful learning experience. All you need to do is make use of your time and resources efficiently. To do this, here are some
tips for you:
1. Take time in reading and understanding each lesson. It is better to be slow but sure than to hurry finishing the module only to find out that you missed the concepts you are supposed to learn.
2. Do not jump from one chapter to another. Usually, the lessons are arranged such that one is built upon another, hence an understanding of the first is essential in comprehending the succeeding lessons.
3. Be honest. When answering the test items, do not turn to the key to correction page unless you are done. Likewise, when performing experiments, record only what you have really observed.
4. Safety first. Perform the experiments with extra precaution. Wear safety gears whenever necessary.
5. Don’t hesitate to ask. If you need to clarify something, approach your teacher or any knowledgeable person.