PUBLICATONS

2023

Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation

D An, G Kim, H Kim, S Kim, J Kim

Semiconductor Science and Technology

Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations

MK Ko, JH Kim, G Kim

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23 (4), 228-235

Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction

C Yun, S Kim, S Cho, IH Cho, H Kim, JH Kim, G Kim

Journal of Semiconductor Technology and Science 23 (4), 207-214

Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT

KY Kim, TH Hwang, YS Song, H Kim, JH Kim

Micromachines 14 (2), 334

Improvement Breakdown Voltage by a Using Crown-Shaped Gate

DG Park, H Kim, JH Kim

Electronics 12 (3), 474

Enhancement of Thermal Characteristics and On-Current in GAA MOSFET by Utilizing Al2O3-Based Dual-κ Spacer Structure

YS Song, S Kim, JH Kim, G Kim, JH Lee, WY Choi

IEEE Transactions on Electron Devices 70 (1), 343-348

2022

Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design

YS Song, KY Kim, TY Yoon, SJ Kang, G Kim, S Kim, JH Kim

Solid-State Electronics 197, 108436

Reliable High-Voltage Drain-Extended FinFET With Thermoelectric Improvement

KY Kim, YS Song, G Kim, S Kim, JH Kim

IEEE Transactions on Electron Devices 69 (11), 5985-5990

Research of Quantized Current Effect with Work Function Variation in Tunnel-field Effect Transistor

K Lee, S Kim, G Kim, JH Kim

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22 (4), 266-274

Multi-colour GaN-based LEDs with trench structure

G Kim, JH Kim, S Kim

Japanese Journal of Applied Physics 61 (5), 050904

Design techniques for high reliability FET by incorporating new materials and electrical/thermal co-optimization

YS Song, SB Rahi, S Tayal, A Upadhyay, JH Kim

Emerging Materials: Design, Characterization and Applications, 133-154

Thermal-aware IC chip design by combining high thermal conductivity materials and GAA MOSFET

YS Song, S Tayal, SB Rahi, JH Kim, AK Upadhyay, BG Park

2022 5th International Conference on Circuits, Systems and Simulation (ICCSS …

OTHER

Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design

YS Song, S Kim, G Kim, H Kim, JH Lee, JH Kim, BG Park

Japanese Journal of Applied Physics 60 (SC), SCCE04

Study on the influence of drain voltage on work function variation characteristics in tunnel field-effect transistor

HW Kim, JH Kim

Journal of Semiconductor Technology and Science 20 (6), 558-564

Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs

YS Song, JH Kim, G Kim, HM Kim, S Kim, BG Park

IEEE Journal of the Electron Devices Society 9, 36-41

Methodology to investigate impact of grain orientation on threshold voltage and current variability in tunneling field-effect transistors

JH Kim, TC Kim, G Kim, HW Kim, S Kim

IEEE Journal of the Electron Devices Society 8, 1345-1349

Optimization of spacer and source/channel junction to improve TFET characteristics

G Kim, JH Kim, S Kim

IEICE Electronics Express 17 (17), 20200211-20200211

Analysis of current variation with work function variation in l-shaped tunnel-field effect transistor

JH Kim, HW Kim, YS Song, S Kim, G Kim

Micromachines 11 (8), 780

Analysis of work-function variation effects in a tunnel field-effect transistor depending on the device structure

G Kim, JH Kim, J Kim, S Kim

Applied Sciences 10 (15), 5378

Analysis of Channel Area Fluctuation Effects of Gate-All-Around Tunnel Field-Effect Transistor

SJ Kang, JU Park, KJ Rim, Y Kim, JH Kim, G Kim, S Kim

Journal of Nanoscience and Nanotechnology 20 (7), 4409-4413

Surrounding channel nanowire tunnel field-effect transistor with dual gate to reduce a hump phenomenon

YS Kwon, SH Lee, Y Kim, G Kim, JH Kim, S Kim

Journal of Nanoscience and Nanotechnology 20 (7), 4182-4187

Rigorous study on hump phenomena in surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET)

SH Lee, JU Park, G Kim, DW Jee, JH Kim, S Kim

Applied Sciences 10 (10), 3596

Study on the nonlinear output characteristic of tunnel field-effect transistor

JH Kim, S Kim

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 20 (2), 158-162

Investigation of line-edge roughness effects on electrical characteristics of nanowire tunnel FETs and MOSFETs

JH Kim, MG Lee, SS Shin, S Kim

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 20 (1), 41-46

F-shaped tunnel field-effect transistor (tfet) for the low-power application

S Yun, J Oh, S Kang, Y Kim, JH Kim, G Kim, S Kim

micromachines 10 (11), 760

Investigation on Temperature Dependency of Recessed-Channel Reconfigurable Field-Effect Transistor

JH Kim, S Kim

Electronics 8 (10), 1124

Transient Analysis of Tunnel Field-Effect Transistor with Raised Drain

JH Kim, HW Kim, SS Shin, S Kim, BG Park

Journal of Nanoscience and Nanotechnology 19 (10), 6212-6216

L-shaped tunnel FET with stacked gates to suppress the corner effect

SS Shin, JH Kim, S Kim

Japanese Journal of Applied Physics 58 (SD), SDDE10

Oxide thin film transistor with a novel gate insulator stack to suppress photo-excited charge injection

JH Kim, J Chang, S Kim, BG Park

IEEE Transactions on Nanotechnology 18, 491-493

Double-gate TFET with vertical channel sandwiched by lightly doped Si

JH Kim, S Kim, BG Park

IEEE Transactions on Electron Devices 66 (4), 1656-1661

High on-current Ge-channel heterojunction tunnel field-effect transistor using direct band-to-band tunneling

G Kim, J Lee, JH Kim, S Kim

Micromachines 10 (2), 77

Demonstration of fin-tunnel field-effect transistor with elevated drain

JH Kim, HW Kim, G Kim, S Kim, BG Park

Micromachines 10 (1), 30

Switching characteristic analysis of tunnel field-Effect transistor (TFET) inverters

DW Kwon, JH Kim, E Park, J Lee, S Kim, BG Park

Journal of Nanoscience and Nanotechnology 17 (10), 7134-7139

Effects of localized body doping on switching characteristics of tunnel FET inverters with vertical structures

DW Kwon, HW Kim, JH Kim, E Park, J Lee, W Kim, S Kim, JH Lee, ...

IEEE Transactions on Electron Devices 64 (4), 1799-1805

GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency

G Kim, MC Sun, JH Kim, E Park, BG Park

Applied Physics Letters 110 (2)

The effect of drain bias stress on the instability of turned-OFF amorphous HfInZnO thin-film transistors under light irradiation

DW Kwon, JH Kim, BG Park

IEEE Transactions on Electron Devices 64 (1), 153-158

Effects of drain doping concentration on switching characteristics of tunnel field-effect transistor inverters

DW Kwon, JH Kim, BG Park

Japanese Journal of Applied Physics 55 (11), 114201

Capacitance–Voltage Characterization of Tunnel Field Effect Transistors with a Si/SiGe Heterojunction

T Park, JH Kim, HW Kim, E Park, J Lee, BG Park

Journal of Nanoscience and Nanotechnology 16 (10), 10256-10259

Improvement of current drivability in high‐scalable tunnel field‐effect transistors with CMOS compatible self‐aligned process

SW Kim, MC Sun, E Park, JH Kim, DW Kwon, BG Park

Electronics Letters 52 (12), 1071-1072

Analysis on trapping kinetics of stress-induced trapped holes in gate dielectric of amorphous HfInZnO TFT

DW Kwon, JH Kim, W Kim, SW Kim, JH Lee, BG Park

IEEE Transactions on Electron Devices 63 (6), 2398-2404

Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor with High-κ/Metal Gate Using Oxygen Scavenging Process

J Lee, JH Kim, DW Kwon, E Park, T Park, HW Kim, BG Park

Journal of Nanoscience and Nanotechnology 16 (5), 4897-4900

Analysis on temperature dependent current mechanism of tunnel field-effect transistors

J Lee, DW Kwon, HW Kim, JH Kim, E Park, T Park, S Kim, R Lee, JH Lee, ...

Japanese Journal of Applied Physics 55 (6S1), 06GG03

Reduction method of gate-to-drain capacitance by oxide spacer formation in tunnel field-effect transistor with elevated drain

DW Kwon, JH Kim, E Park, J Lee, T Park, R Lee, S Kim, BG Park

Japanese Journal of Applied Physics 55 (6S1), 06GG04

Demonstration of L-shaped tunnel field-effect transistors

SW Kim, JH Kim, TJK Liu, WY Choi, BG Park

IEEE transactions on electron devices 63 (4), 1774-1778

Vertical type double gate tunnelling FETs with thin tunnel barrier

JH Kim, SW Kim, HW Kim, BG Park

Electronics Letters 51 (9), 718-720

Effects of current spreading in GaN-based lightemitting diodes using ITO spreading pad

JH Kim, G Kim, E Park, DH Kang, BG Park

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 15 (1), 114-121

Reduction of Current Crowding in InGaN-based Blue Light-Emitting Diodes by Modifying Metal Contact Geometry

G Kim, JH Kim, E Park, BG Park

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 14 (5), 588-593

Schottky barrier tunnel field-effect transistor using spacer technique

HW Kim, JP Kim, SW Kim, MC Sun, G Kim, JH Kim, E Park, H Kim, ...

Journal of Semiconductor Technology and Science 14 (5), 572-578

Effects of periodic trench structure on cathodo‐luminescence in InGaN/GaN multi‐quantum wells

G Kim, SW Kim, JH Kim, E Park, BG Park

Electronics letters 50 (14), 1012-1014

Tunneling field-effect transistor with Si/SiGe material for high current drivability

HW Kim, JH Kim, SW Kim, MC Sun, E Park, BG Park

Japanese Journal of Applied Physics 53 (6S), 06JE12

Improved internal quantum efficiency of GaN-based light emitting diodes using p-AlGaN trench in multi-quantum well

G Kim, J Kim, E Park, D Kang, BG Park

Japanese Journal of Applied Physics 53 (6S), 06JE14

Analysis of trap and its impact on InGaN-based blue light-emitting diodes using current-transient methodology

G Kim, E Park, JH Kim, JH Bae, DH Kang, BG Park

Japanese Journal of Applied Physics 53 (6), 062101

Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region

G Kim, JH Kim, EH Park, D Kang, BG Park

Optics Express 22 (2), 1235-1242

Analysis of the internal quantum efficiency of gallium-nitride-based light-emitting diodes from the transient electro-luminescence characteristics

JH Kim, G Kim, E Park, BG Park, JG Son, DH Kang

Journal of the Korean Physical Society 63, 1186-1188

A novel fabrication method for the nanoscale tunneling field effect transistor

HW Kim, JH Kim, SW Kim, MC Sun, G Kim, E Park, H Kim, KW Kim, ...

Journal of nanoscience and nanotechnology 12 (7), 5592-5597

Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors

JH Kim, DW Kwon, JS Chang, SW Kim, JC Park, CJ Kim, BG Park

Applied Physics Letters 99 (4)

Split-gate-structure 1T DRAM for retention characteristic improvement

G Kim, SW Kim, KC Ryoo, JH Oh, MC Sun, HW Kim, DW Kwon, JS Jang, ...

Journal of Nanoscience and Nanotechnology 11 (7), 5603-5607

Light effect on negative bias-induced instability of HfInZnO amorphous oxide thin-film transistor

DW Kwon, JH Kim, JS Chang, SW Kim, W Kim, JC Park, CJ Kim, BG Park

IEEE Transactions on electron devices 58 (4), 1127-1133

Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

DW Kwon, JH Kim, JS Chang, SW Kim, W Kim, JC Park, I Song, CJ Kim, ...

Applied Physics Letters 98 (6)