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Hello and welcome
The Multi Level Information Memory Device Lab(MIDL) is a hub for technical innovation and excellence, dedicated to pushing the boundaries of next-generation memory and semiconductor technologies. Our lab, the Multi-Level Information Memory Device Lab, is passionate about transforming the future of hardware by exploring diverse and interdisciplinary research areas that bridge device physics and circuit design.
Our goal is to revolutionize the memory and device landscape, creating solutions that are both powerful and efficient for the evolving digital era.
We invite you to browse our website to access our latest research, view our publications, meet our dedicated team of researchers, or contact us for potential collaborations.
Recent Publications
Charge vertical diffusion control of threshold voltage behavior in GaN MIS-HEMTs under bias temperature instability (BTI)
Notice
대학원 석사생 모집 중
전력반도체 HEMT 공정/설계 분야 2명
DRAM Sense Amp 설계 분야 1명
Research
We specialize in DRAM Sense Amplifiers, III-V semiconductors, and device physics.
Our research bridges the gap between advanced materials and high-performance memory architectures.
Publications
Discover our latest research and academic achievements.
We regularly share our findings in semiconductor journals and conferences to advance memory and device technologies.
Our Team
Meet the researchers at MIDL.
Our team of master's and doctoral students works together to solve complex semiconductor challenges.
Join us in shaping the future.
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