Exploratory Device Research Lab (ExDRL) is dedicated to explore groundbreaking device ideas based on exotic materials and/or novel concepts of device operations.
We are actively looking for highly motivated graduate and undergraduate students with a background in Electrical Engineering, Materials Science and Engineering, Physics, or related discipline. If you are interested, please send me your CV and transcripts by email (jiwonchang at yonsei.ac.kr).
Currently, we have several openings for the following research topics.
Density functional theory calculations for high-k gate stacks and dopant diffusion
Required Background: Quantum Mechanics, Solid State Physics, Python
Development of advanced FETs simulators based on Semi-Classical Monte Carlo approach
Required Background: Device Physics, Quantum Mechanics, Solid State Physics, C++, Python, Machine Learning
TCAD/SPICE simulation of advanced logic/memory devices
Required Background: Device Physics, Semiconductor Process, Circuit Theory, Circuit Layout Design, Tcl
Development of device/process simulator (Industry Project)
Required Background: Quantum Mechanics, Solid State Physics, C++, Python, Machine Learning
We are currently seeking a candidate who will work on device simulator development/computational calculations of material & device using semi-classical Monte-Carlo carrier transport or density functional theory.
현재 반도체 소자 (Nanosheet FETs) 시뮬레이터 개발 연구/density functional theory 기반 소재·소자 시뮬레이션 연구를 진행할 학생을 우선적으로 선발하고 있습니다.
Recent News
[2025.09] Uiho joins ExDRL. Welcome aboard!
[2025.08] Sang Eun and Chang Jun have graduated with M.S. degree and will be joining Samsung Electronics. Congratulations!
[2025.08] Our paper “Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS2 Nanosheet Field-Effect Transistors for Area-Efficient Integrated Circuit” is accepted for publication in Small.
[2025.08] Our paper “Theoretical Evaluation of Reliability and Via Resistance of Liner-less Co Interconnect Using Co-Ti Binary Alloy” is accepted for publication in IEEE Trasanctions on Electron Devices.
[2025.08] Our paper “Restorative Effects of Low-Temperature Post-Sulfur Annealing on Device Performance of Monolayer MoS2 Transistors for NMOS Inverters” is accepted for publication in Small.
[2025.06] Our paper “Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field-Effect Transistors Based on Vertically Stacked MoS2/WSe2 n-/p- Field-Effect Transistors” is accepted for publication in Advanced Functional Materials.
[2025.06] Our paper “Energy-Efficient, Scalable Single-Layer MoS2−Based Synaptic Field-EffectTransistors” is accepted for publication in ACS Applied Electronic Materials.
[2025.05] Dong Hyeok and Sukhyeong's works are accepted for presentation in the 30th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2025. Congratulations!
[2025.04] Our paper “FDSOI-Based Reconfigurable FETs: A Ferroelectric Approach” is accepted for publication in IEEE Trasanctions on Nanotechnology.
[2025.04] Eunyeong and Jiwon's works are accepted for presentation in the 83rd Device Research Conference (DRC) 2025. Congratulations!
[2025.03] Sangmin receives Poster Award from the 32nd KCS 2025 for his poster "High-Fidelity Modeling of Dual Gate MoS2 MOSFETs: A TCAD Framework for 2D Material-Based Transistor Design". Congratulations!
[2025.03] Nayun joins ExDRL. Welcome aboard!
[2024.12] Our paper “Attoampere Level Leakage Current in Chemical Vapor Deposition-Grown Monolayer MoS2 Dynamic Random-Access Memory in Trap-Assisted Tunneling Limit” is accepted for publication in ACS Nano.
[2024.11] Our perspective paper "Topological Semimetals for Advanced Node Interconnects" is accepted for publication in iScience.
[2024.10] Our paper “Wafer-Scale Growth of Ultra-Uniform 2D PtSe2 Films with Spatial and Thickness Control Through Multi-Step Metal Conversion” is accepted for publication in ACS Nano.
[2024.08] Jae Eun has graduated with Ph.D degree and will be joining Samsung Electronics. Congratulations!
[2024.08] Our paper “Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime” is accepted for publication in ACS Nano.
[2024.07] Our paper “Improvement of Contact Resistance and Three-Dimensional Integration of Two-Dimensional Material Field-Effect Transistors Using Semi-metallic PtSe2 Contacts” is accepted for publication in Advanced Functional Materials.
[2024.06] Sukhyeong receives Ph.D. Fellowship from National Research Foundation (NRF) of Korea. Congratulations!
[2024.05] Our paper “Grain Boundary Control for High-Reliability HfO2-based RRAM” is accepted for publication in Chaos, Solitons and Fractals.
[2024.05] Dong Hyeok receives Enterprise Award (DB Hitec) from the 31st KCS 2024 for his presentation "Neural Network-Assisted Acceleration of Full-Band Semi-Classical Monte Carlo Carrier Transport Simulation". Congratulations!
[2024.03] Jaeyeon receives M.S. Fellowship from National Research Foundation (NRF) of Korea. Congratulations!
[2024.03] Shinyeong, Sangmin, Jaeyeon, Minsu and Junwon join ExDRL. Welcome aboard!
[2024.02] Sekwon has graduated with M.S. degree and will be joining Samsung Electronics. Congratulations!
[2023.09] Our paper “Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide” is accepted for publication in ACS Applied Materials & Interfaces.
[2023.09] Changmin, Sang Eun and Chang Jun join ExDRL. Welcome aboard!
[2023.03] Changwook and Jiwon join ExDRL. Welcome aboard!
[2023.02] Our paper “Computational Analysis of Metal Contact on Bi2O2Se with Se Surface Vacancies” is accepted for publication in Advanced Electronic Materials.
[2022.10] Our paper “Pentagonal 2D Layered PdSe2-based Synaptic Device with Graphene Floating Gate” is accepted for publication in Journal of Materials Chemistry C.
[2022.09] Jisoo joins ExDRL. Welcome aboard!
[2022.06] Our paper “Demonstration of PdSe2 CMOS Using Same Metal Contact in PdSe2 n-/p-MOSFETs through Thickness-Dependent Phase Transition” is accepted for publication in Advanced Electronic Materials.
[2022.05] Jae Eun receives Ph.D. Fellowship from National Research Foundation (NRF) of Korea. Congratulations!
[2022.03] Sekwon joins ExDRL. Welcome aboard!
[2021.10] Our collaboration paper "Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure" is accepted for publication in Science Advances.
[2021.09] Our collaboration paper "Design of p-WSe2/n-Ge Heterojunctions for High-Speed Broadband Photodetectors" is accepted for publication in Advanced Functional Materials.
[2021.08] Our paper “Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistor” is accepted for publication in ACS Applied Materials & Interfaces.
[2021.07] Our paper “Theoretical Evaluation of Two-Dimensional Ferroelectric Material CuInP2S6 for Ferroelectric Tunnel Junction Device” is accepted for publication in IEEE Electron Device Letters.
[2021.05] Eunyeong and Jeonghyeon present their work in IWCN 2021.
[2021.05] Prof. Chang serves as an organizing committee for IWCN 2021.
[2021.05] Our collaboration paper "Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition" is accepted for publication in ACS Nano.
[2021.04] Our paper "Gate-Controlled Rectifying Direction in PdSe2 Lateral Heterojunction Diode" is accepted for publication in Advanced Electronic Materials.
[2021.03] We moved to Department of System Semiconductor Engineering in Yonsei University.