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Patents

1.  B. Ray, “Systems and methods to convert memory to one-time programmable memory,” U.S. Patent # 11,101,009 (2021)

2. B. Ray and M. T. Rahman, “Systems and methods for detecting counterfeit memory,” U.S. Patent # 11,114,179 (2021).

3. B. Ray, P. Rabkin, M. V. Dunga, G. J. Hemink, C. Chen, "Programming to minimize cross-temperature threshold voltage widening" U.S. Patent # 10978145 (2021)

4. M. V. Dunga, A. Khandelwal, C. Chen, and B. Ray, “System and method for string-based erase verify to create partial good blocks”, U.S. Patent # 10535411 (2020). 

5. M. V. Dunga, C. Chen, B. Ray, "Post write erase conditioning", U.S. Patent  # 10269439 (2020) (link)

6. B. Ray, "Systems and methods for sensing radiation using flash memory",U.S. Patent # 10878922  (2019). (link) 

7. B. Ray, Levi Davies, “Flash memory based radiation sensing”, U.S. Patent # 10509132 (2019). (link)

8. H. Naik, B. Ray, M. V. Dunga, C. Chen, "Memory write verification using temperature compensation", U.S. Patent # 10304559 (2019).(link)

9. B. Ray, M. V. Dunga, G. J. Hemink, and C. Chen, “Erase speed based wordline control”, U.S. Patent # 10304551 (2019). (link)

10. H. Naik, M. V. Dunga, C. Chen, B. Ray, "System and method for programming a memory device with multiple writes without an intervening erase", U.S. Patent # 9972396 (2018).(link)

11. B. Ray, M. V. Dunga, and C. Chen, "Erase for partially programmed blocks in non-volatile memory", U.S. Patent # 10074440 (2018). (link)

12. B. Ray, G. J. Hemink, M. V. Dunga, B. Rajamohanan, C. Chen, “Cell current based bit line voltage for Flash memory”, U.S. Patent # 10008273 (2018).(link)

13. Chris Yip, Philip Reusswig, Nian Niles Yang, Grishma Shah, Abuzer Azo Dogan, Biswajit Ray, Mohan Dunga, Joanna Lai, Changyuan Chen, "System solution for first read issue using time dependent read voltages", U.S. Patent # 9711231 (2017).(link)

14. B. Ray, M. V. Dunga, C. Chen, "Apparatus and method for preconditioning currents to reduce errors in sensing for non-volatile memory", U.S. Patent # 9704588 (2017).(link)

15. B. Ray, M.V. Dunga, C. Chen, “Word line dependent temperature compensation scheme during sensing to counteract cross-temperature effect”, U.S. Patent # 9543028  (2017).(link)

16. B. Ray, A. Dogan, C. Chen, “Temperature dependent sensing scheme to counteract cross-temperature threshold voltage distribution widening”, U.S. Patent # 9530512 (2016).(link)

Journals/Conference Proceedings

2023

1. M. Buddhanoy, and B. Ray, “Electrostatic Shielding of NAND Flash Memory from Ionizing Radiation” in Proc. of the 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, March 2023.

2. S. Huang, and B. Ray, “Overcoming the low cell current bottleneck of 3D NAND flash memory array with novel device design” in Proceedings of the 81st Device Research Conference, June 2023. 

3. U. Surendranathan, H. Wilson, A. Milenkovic, and B. Ray, “Technology scaling effects on SRAM-PUF reliability under ionizing radiation,” in Proceedings of the 81st Device Research Conference, June 2023 

4. Md Raquibuzzaman, A. Milenkovic, and B. Ray, “Intra-block Wear-leveling to Counter Layer-to-Layer Endurance Variation of 3D NAND Flash Memory,” IEEE Transaction on Electron Devices, vol. 70, no. 1, pp. 70-75, 2023.

5. U. Surendranathan, H. Wilson, M. Wasiolek, K. Hattar, A. Milenkovic, and B. Ray, “Total Ionizing Dose Effects on the Power-up State of Static Random-Access Memory,” IEEE Transactions on Nuclear Science, vol. 70, no. 4, pp. 641-647, 2023.

6. S. Pranesh, M. Buddhanoy, S. Sakib, B. Ray, and R. S. Chakraborty, “A Shared Page-Aware Machine Learning Assisted Method for Predicting and Improving Multi-Level Cell NAND Flash Memory Life Expectancy,” Elsevier Microelectronics Reliability, vol. 140, art. no. 114867, 2023. 

2022

1.  Md Raquibuzzaman, M. Buddhanoy,  A. Milinkovic, and B. Ray, “Instant Data Sanitization on Multi-Level-Cell NAND Flash Memory,” in Proceedings of the 15th ACM International Conference on Systems and Storage (SYSTOR ’22), Haifa, Israel, June 2022. (Acceptance rate 30%). (link) (video)

2. Md Raquibuzzaman, A. Milenkovic, and B. Ray, “Layer-to-Layer Endurance Variation of 3D NAND”, in Proc. of the 2021 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, April 2022. (link) (video)

3. M. Buddhanoy, S. Sakib, U. Surendranathan, M. Wasiolek, K. Hattar, A. Milenkovic, and B. Ray, “Total-Ionizing-Dose Resistant Novel Data Encoding Technique for NAND Flash Memory,” IEEE Transactions on Device and Materials Reliability, 2022. (link)

4. M. Buddhanoy, P. Kumari, U. Surendranathan, M. Wasiolek, K. Hattar, and B. Ray, “Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories,” IEEE Transactions on Nuclear Science, vol. 69, no. 3, pp. 390-396, 2022. (link)

5. P. Kumari, U. Surendranathan, M. Wasiolek, K. Hattar, N.P. Bhat and B. Ray, “Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application,” IEEE Transactions on Nuclear Science, vol. 69, no. 3, pp. 478-484, 2022. (link)

6. U. Surendranathan, M. Wasiolek, K. Hattar, D.M. Fleetwood, and B. Ray, “Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories,” IEEE Transactions on Nuclear Science, vol. 69, no. 3, pp. 321-326, 2022. (link)

7. Md Raquibuzzaman, A. Milenkovic, and B. Ray, “EXPRESS: Exploiting energy-accuracy trade-offs in 3D NAND flash memory for energy-efficient storage,” MDPI Electronics, 11 (3), art. no. 424, 2022. (link) 

2021

1. S. Sakib, A. Milenkovic, and B. Ray, “Flash-DNA: Identifying NAND Flash Memory Origins Using Intrinsic Array Properties”, IEEE Transactions on Electron Devices, 2021.  (link)

2. U. Surendranathan, P. Kumari, M. Wasiolek, K. Hattar, T. Boykin and B. Ray, “ Gamma Ray Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories”, IEEE Transactions on Nuclear Science, vol. 68, no. 5, pp. 733-739, 2021. (link)

3. P. Kumari, U. Surendranathan, M. Wasiolek, K. Hattar, N.P. Bhat and B. Ray, “Radiation Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory”, IEEE Transactions on Nuclear Science, vol. 68, no. 5, pp. 1032-1039, 2021. (link)

4. S. Sakib, Md Raquibuzzaman, M. Wasiolek, K. Hattar, and B. Ray, “Total Ionizing Dose Effects on Physical Unclonable Function from NAND Flash Memory”, IEEE Transactions on Nuclear Science, 2021. (accepted) 

5. M. Buddhanoy, S. Sakib, and B. Ray,  "Runtime Variability Monitor for Data Retention Characteristics of Commercial NAND Flash Memory”, in Proc. of the 2021 IEEE International Reliability Physics Symposium, 2021. (link) (video)

6. P. Poudel, B. Ray, and A. Milinkovic, “Microcontroller Fingerprinting Using Partially Erased NOR Flash Memory Cells”, ACM Transactions on Embedded Computing Systems, vol. 20, no. 3, article no. 26, 2021. (link)

2020

1. M. Hasan and B. Ray, "Data Recovery from “Scrubbed” NAND Flash Storage: Need for Analog Sanitization" in the Proceedings of 29th USENIX Security Symposium, 2020 (acceptance rate 16%). (link) (video)

2. P. Poudel, B. Ray, and A. Milinkovic, “Flashmark: Watermarking of NOR Flash Memories for Counterfeit Detection”, in the Proceedings of 57th IEEE Design and Automation Conference (DAC), 2020. (Acceptance rate 23%). (link)

3. B. Bahar Talukder, V. Menon, B. Ray, T. Neal, M. Rahman “Towards the Avoidance of Counterfeit Memory: Identifying the DRAM Origin”, in Proc. of the IEEE International Symposium on Hardware Oriented Security and Trust (HOST), 2020, pp. 111-121. (Acceptance rate 20%)(link)

4. S. Sakib, A. Milenkovic, and B. Ray, “Flash Watermark: An Anti-Counterfeiting Technique for NAND Flash Memories”, IEEE International Symposium on Hardware Oriented Security and Trust (HOST) Hardware Demo, 2020. (video)

5. S. Sakib, A. Milenkovic, and B. Ray, “Flash Watermark: An Anti-Counterfeiting Technique for NAND Flash Memories”, IEEE Transactions on Electron Devices, 2020. (link)

6. M. Hasan and B. Ray, "Reliability of NAND Flash Memory as a Weight Storage Device of Artificial Neural Network", IEEE Transactions on Device and Materials Reliability, vol. 20, no. 3, pp. 596-603, 2020. (link)

7. P. Kumari, S. Huang, M. Wasiolek, K. Hattar, and B. Ray, "Layer Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation", IEEE Transactions on Nuclear Science,  vol. 67, no. 9, pp. 2021-2027, 2020. (link)

8. M. Hasan, M. Raquibuzzaman, I. Chatterjee and B. Ray, "Radiation Tolerance of 3-D NAND Flash Based Neuromorphic Computing System", Proc. of the 2020 IEEE International Reliability Physics Symposium, Monterey, CA, 2020. (link) (video)

9. S. Sakib, A. Milenkovic, M. T. Rahman and B. Ray, "An Aging-Resistant NAND Flash Memory Physical Unclonable Function", IEEE Transactions on Electron Devices,  vol. 67, no. 3, pp. 937 - 943, 2020. (link)

2019

1. B. Talukder, B. Ray, D. Forte, and M. T. Rahman “PreLatPUF: Exploiting DRAM Latency Variations for Generating Robust Device Signatures”, IEEE Access, vol. 7, no. 1, pp. 81106-81120, 2019.(link)

2. M. Hasan and B. Ray, " Tolerance of Deep Neural Network Against the Bit Error Rate of NAND Flash Memory", Proc. of the 2019 IEEE International Reliability Physics Symposium, Monterey, CA, 2019. (link)

3. Saranyu Chattopadhyay ; Preeti Kumari ; Biswajit Ray ; Rajat Subhra Chakraborty, "Machine Learning Assisted Accurate Estimation of Usage Duration and Manufacturer for Recycled and Counterfeit Flash Memory Detection", 2019 IEEE 28th Asian Test Symposium (ATS) (link)

4. P. Kumari, F. Irom, and B. Ray, “Word Line Dependent Bit Error in 3-D NAND Flash Under Ionizing Radiation”, 2019 IEEE Nuclear and Space Radiation Effects Conference, San Antonio, Texas 

5. B. Talukder, B. Ray, T. Morris, and M. T. Rahman, “Exploiting DRAM Latency Variations for Generating True Random Numbers”, Proc. of 2019 IEEE International Conference on Consumer Electronics (ICCE). (link)

6. M. Raquibuzzaman, S. Dongaonkar, and B. Ray, “Can Bad Solar Cells Make a PV Module More Efficient?” 46th IEEE Photovoltaic Specialists Conference, 2019 (link).

7. S. Huang, T. B. Boykin, R. S. Gorur and B. Ray, “Electrical Tree Formation in Polymer-Filler Composites”, IEEE Transactions on Dielectrics and Electrical Insulation, vol. 15, no. 6, pp. 2375-2379, 2019 .(link)

2018

1. P. Kumari, B. S. Talukder, S. Sakib, B. Ray, and M. T. Rahman, “Independent Detection of Recycled Flash Memory: Challenges and Solutions”, IEEE International Symposium on Hardware Oriented Security and Trust, Washington DC, USA, 2018. (Acceptance rate 20.2%)

2. P. Kumari, L. Davies, N. P. Bhat, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood and B. Ray, "State-of-the-Art Flash Chips for Dosimetry Application", in Proc. of IEEE Radiation Effects Data Workshop, Kona, HI, USA, 2018. (link)

3. P. Poudel, B. Ray, and A. Milinkovic, "Microcontroller TRNGs Using Perturbed States of NOR Flash Memory Cells", IEEE Transactions on Computers, 2018. (link) 

4. S. Sakib, P. Kumari, B.M.S.B. Talukder, M.T. Rahman, B. Ray, "Non-Invasive Detection Method for Recycled Flash Memory Using Timing Characteristics", Cryptography, vol. 2, no. 3, p. 17, Aug. 2018. (link)

5. M. Raquibuzzaman, B. Ray, T. B. Boykin, and R. S. Gorur, “Polymer-Metal Layered Structures for Improved Energy Storage Density”, IEEE Transactions on Dielectrics and Electrical Insulation, vol. 15, no. 6, pp. 2375-2379, 2018. (link)

6.  B. Ray, and A. Milenkovic, "True Random Number Generation Using Read Noise of Flash Memory Cells", IEEE Transactions on Electron Devices, vol. 65, no. 2, pp. 963-969,  2018.(link)

7. S. Ritter, T. Pigg, C. Brown, B. Ray, “True Random Number Generator using Solar Output Characteristics”, Proc. of IEEE International Conference on Wireless for Space and Extreme Environments, Huntsville, AL, USA, Dec. 2018. (link)

8. P. Kumari and B. Ray, “Wireless Passive Radiation Dosimeter Using Flash Memory,” in Proc. of 6th IEEE International Conference on Wireless for Space and Extreme Environments (WiSEE), Huntsville, AL, USA, 2018, pp. 239–245.(link)

9. L. Davies, R. Thornton, P. Hudson, and B. Ray, "Automatic Detection and Characterization of Partial Shading in PV System", IEEE Photovoltaic Specialist Conference (PVSC), Waikoloa, HI, 2018. (Accepted)  

2017 and earlier 

1. B. Ray, A.G. Baradwaj, B.W. Boudouris, and M.A. Alam, “Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells”, Proceedings of the National Academy of Sciences, 112 (36), 11193-11198, 2015.(link)

2. B. Ray, A.G. Baradwaj, B.W. Boudouris, and M.A. Alam, “Defect Characterization in Organic Semiconductors by Forward Bias Capacitance Analysis”, The Journal of Physical Chemistry C 118 (31), 17461-17466, 2014.(link)

3. J.H. Beck, B. Ray, R.R. Grote, R.M. Osgood, C.T. Black, M.A. Alam, I. Kymissis, “Nanostructured Electrodes Improve the Fill Factor of Organic Photovoltaics”, IEEE Journal of Photovoltaics, 4(4), 1100 - 1106, 2014.(link)

4. R.K. Chavali, J.R. Wilcox, B. Ray, J.L. Gray, and M. A. Alam, “Correlated Non-Ideal Effects of Dark and Light I-V Characteristics in a-Si/c-Si Heterojunction Solar Cells”, IEEE Journal of Photovoltaics, 4(3), 763 - 771, 2014.(link)

5. M.R. Khan, B. Ray, M.A. Alam, “Prospects of layer-split tandem cells for high-efficiency OPV”, Solar Energy Materials and Solar Cells, vol. 120, 716-723, 2014.(link)

6. M.A. Alam, B. Ray, M.R. Khan, and S. Dongaonkar, “The Essence and Efficiency Limits of Bulk-Heterostructure Organic Solar Cells: A Polymer-to-Panel Perspective”, Journal of Materials Research, 28 (4), 2013. (link)

7. B. Ray, M.R. Khan, C.T. Black, and M.A. Alam, “Nano-structured Electrode for Organic Solar Cells: Analysis and Design Fundamentals”, IEEE Journal of Photovoltaics, 3(1), 318-329, 2013.(link)

8. B. Ray, and M.A. Alam, “Achieving Fill Factor Above 80% in Organic Solar Cells by Charged Interface”, IEEE Journal of Photovoltaics, 3(1), 310-317, 2013.(link)

9. B. Ray, M.S. Lundstrom, and M.A. Alam, "Can morphology tailoring improve the open circuit voltage of organic solar cells?", Applied Physics Letters, vol. 100, pp. 013307-3, 2012. (Recognized as one of the most notable APL articles published in 2012)(link)

10. B. Ray, and M.A. Alam, "Random vs regularized OPV: Limits of performance gain of organic bulk heterojunction solar cells by morphology engineering", Solar Energy Materials and Solar Cells, vol. 99, pp. 204-212, 2012. (link)

11. J.E. Allen, B. Ray, M.R. Khan, K.G. Yager, M.A. Alam, C.T. Black, “Self-assembly of single dielectric nanoparticle layers and integration in polymer-based solar cells”, Applied Physics Letters, 101(6), 063105, 2012.(link)

12. J. Li, B. Ray, M. Alam, and M. Ostling, “On the Threshold of Hierarchal Percolating Systems”, Physical Review E, vol. 85, p. 021109, 2012.(link)

13. B. Ray, P.R. Nair, and M.A. Alam, "Annealing Dependent Performance of Organic Bulk-Heterojunction Solar Cells: A Theoretical Perspective", Solar Energy Materials and Solar Cells, vol.95, pp. 3287-3294, 2011.(link)

14. B. Ray, and M.A. Alam, "A compact physical model for morphology induced intrinsic degradation of organic bulk heterojunction solar cell", Applied Physics Letters, vol. 99, pp. 033303-3, 2011.(link)

15. B. Ray, and S. Mahapatra, "Modeling of Channel Potential and Subthreshold Slope of Symmetric Double Gate Transistor", IEEE Transactions on Electron Devices, vol. 56, no. 2, pp. 260-266, 2009.(link)

16. B. Ray, and S. Mahapatra, "Modeling and analysis of body potential of cylindrical Gate-All-Around nanowire transistor", IEEE Transactions on Electron Devices, vol. 55, no. 9, pp. 2409-2416, 2008.(link)

17. B. Ray, and M.A. Alam, “Role of Charged Defects on Organic Solar Cell Performance: Prospect of Heterojunction-Free Device Design” Proc. of the 39th IEEE Photovoltaic Specialists Conference (PVSC), Tampa, Florida, USA, 2013.(Nominated for best student paper award in Area 6: Organic Photovoltaic)

18. B. Ray, and M.A. Alam, “Is A Heterojunction Essential for High-Efficiency Organic Solar Cells?” Device Research Conference, Norte Dame, IN, USA, 2013. (accepted as late news paper). 

19. B. Ray, A.G. Baradwaj, B.W. Boudouris, and M.A. Alam, “Capacitance Collapse in Forward Bias Fingerprints Defects in Organic Semiconductors”, MRS Spring Meeting, San Francisco, CA, USA, 2013.

20. B. Ray, M.A. Alam , “Achieving Fill Factor Above 80% in Organic Solar Cells by Interface Engineering”, Proc. of the 38th IEEE Photovoltaic Specialists Conference (PVSC), Austin, TX, USA, 2012.(Best poster award in Area 6: Organic Photovoltaic) 

21. B. Ray, M.A. Alam, "Optimum Morphology and Performance Gains of Organic Solar Cells", Proc. of the 37th IEEE Photovoltaic Specialists Conference (PVSC), Seattle, WA, USA, 2011. (Nominated for best student paper award in Area 6: Organic Photovoltaic) 

22. M.A. Alam, B. Ray, M.R. Khan, and S. Dongaonkar, “The Essence and Efficiency Limits of Bulk-Heterostructure Organic Solar Cells”, Proc. of MRS Fall Meeting, Boston, MA, USA, 2011. 

23. M.A. Alam, B. Ray, M.R. Khan, “Untangling the Essence of Bulk Heterostructure Organic Solar Cells: Why Complex Need Not be Complicated”, IEEE Semiconductor Device Research Symposium, College Park, MD, USA, 2011. 

24. B. Ray, P.R. Nair, And M.A. Alam, "Morphology Dependent Short Circuit Current In Bulk Heterojunction Solar Cell", Proc. of the IEEE Photovoltaic Specialists Conference (PVSC), Honolulu, HI, USA, 2010. 

25. B. Ray, M.R. Khan, and M.A. Alam, "Performance Improvement of Polymer Based Solar Cell by Ordered Nano-morphology", Proc. of the University Government Industry Micro/nano Symposium (UGIM), IEEE, West Lafayette, IN, USA, 2010. 

26. B. Ray, P.R. Nair, R.E. García and M.A. Alam, "Modeling and Optimization of Polymer based Bulk Heterojunction (BH) Solar cell", Proc. of the IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA, 2009. 

27. B. Ray and S. Mahapatra, “A New Threshold Voltage Model for Omega Gate Cylindrical Nanowire Transistor”, Proc. of the IEEE International Conference on VLSI Design, Hyderabad, India, 2008. 

28. B. Ray, K. Shubhakar, and S. Mahapatra, “Necessity for Quantum Mechanical Simulation for the Future Technology Nodes”, Proc. of the IEEE International Workshop on Physics of Semiconductor Devices (IWPSD), Mumbai, India, pp. 880 - 883,  2007.

29. A. Agarwal, B. Ray, M. Choudhury, A. Basu and S. Sarkar, “Automatic Extraction of Multiword Expressions in Bengali: An Approach for Miserly Resources Scenario”, Proc. of the International Conference on Natural Language Processing (ICON ),Hyderabad, India, pp. 165 - 172, Dec. 2004.