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In this page you can find information about "scientific me." I am currently a tenure-track scientist at the Paul Scherrer Institut in Switzerland. I am a member of the Laboratory of Micro- and Nanotechnology and the Advanced Lithography and Metrology Group. I am the NFFA project coordinator and a researcher in advanced nanolithogrpaphy and nanofabrication techniques.
Before PSI , I worked at the Observatoire de Paris as a Research Engineer and a member of the LERMA laboratory (Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres). However I worked full time at the CNRS Laboratory for Photonics and Nanostructores (LPN), now Center for Nanoscience and Nanotechnology (C2N), outside of Paris, where I developed and fabricated THz circuits for space applications. In parallel, I was a part-time lecturer at Univerité Paris 7 (Diderot).
Previously, I worked as a postdoctoral researcher at LPN, developing semiconductor nanostructures for electrical transport measurements, thermodynamic measurements and nanoelectromechanical and metrology applications, working with various materials, such as GaAs and graphene. More specifically, I fabricated state-of-the art electrical resistance standards based on the quantum Hall effect (QHE) in graphene, which surpassed GaAs based standards and which can work at relaxed laboratory conditions, suitable for industrial applications. In this context, I nanofabricated and characterised various graphene devices either grown epitaxially on SiC or by CVD methods. Moreover, I developed a process for fabricating suspended two-dimensional electron gases (2DEGs) with almost unaffected density and mobility. The suspended 2DEGs have applications ranging from 2DEG specific heat measurements to nanomechanical applications. Beyond the aforementioned projects, during my years at LPN I have worked on several other projects collaborating with various institutes in France and abroad.
During my doctorate studies, I worked in Prof. A. Zaslavsky's group in the Division of Engineering at Brown University. My work was mainly on the fabrication and characterization of ultrathin germanium-on-insulator (GeOI) field-effect trnsistors (FETs) and tunneling FETs (TFETs). I also worked on the subthreshold MOSFET characterization and modeling for low-noise and low-power applications. In addition, I worked on nanowire devices, especially in Si, Ge and SiGe nanowires. During my doctorate studies, I had the chance to work also with III-V materials, particularly on resonant tunneling diodes and on photocatalysis on ultra-thin oxides. The title of my Ph.D. thesis is: "Ultrathin Ge/high-κ dielectric structures for end-of-roadmap devices and other applications." You can download a copy of my thesis from the links in the "List of Publications" section below.
Before my doctorate studies I worked at the Microelectgronic Circuit Design Group of the National Technical University of Athens (NTUA) on the characterization and modeling of the MOSFET, especially using the EKV MOSFET model.
You can download my resume in pdf format.
Journal Publications
Journal Publications
A. Mraz, R. Venturini, D. Svetin, V. Sever, I. A. Mihailovic, I. Vaskivskyi, B. Ambrozic, G. Dražić, M. D'Antuono, D. Stornaiulo, F. Tafuri, D. Kazazis, J. Ravnik, Y. Ekinci, and D. Mihailovic
Charge configuration memory devices – energy efficiency and switching speed
Nano Lett. 22, 4814 (2022)S. M. Lewis, H. R. Alty,M. Vockenhuber, G. A. DeRose, A. Fernandez-Mato, D. Kazazis, P. L. Winpenny, R. Grindell, G. A. Timco, A. Scherer, Y. Ekinci, and R. E. P. Winpenny
Sensitivity enhancement of a high resolution negative-tone non chemically amplified metal organic photoresist for extreme ultra violet lithography
Accepted for publication J. Micro/Nanopattern. Mater. Metrol. 21, 041404 (2022)T. Mortelmans, D. Kazazis, C. Padeste, P. Berger, X. Li, and Y. Ekinci
Poly(methyl methacrylate)-based nanofluidic device for rapid and multiplexed serological antibody detection of SARS-CoV‑2
ACS Appl. Nano Mater. 5, 517 (2022)X. Wang, D. Kazazis, L.-T. Tseng, A.P.G. Robinson, and Y. Ekinci
High-efficiency diffraction gratings for EUV and soft x-rays using spin-on-carbon underlayers
Nanotechnology 33, 065301 (2022)N. Mojarad, D. Kazazis, and Y. Ekinci
Fabrication of high aspect ratio and tilted nanostructures using extreme ultraviolet and soft x-ray interference lithography
J. Vac. Sci. Technol. B 39, 042601 (2021)R. Kirchner, V. Neumann, F. Winkler, C. Strobel, S. Völkel, A. Hiess, D. Kazazis, U. Künzelmann, and J. W. Bartha
Anisotropic etching of pyramidal silica reliefs with metal masks and hydrofluoric acid
Small 2020, 2002290, (2020)D. Kazazis, L.-T. Tseng, Y. Ekinci
Achromatic Talbot lithography with nano-ring masks for high-throughput periodic patterning
Microelectron. Eng. 225, 111273 (2020)T. Mortelmans, D. Kazazis, V. A. Guzenko, C. Padeste, T. Braun, H. Stahlberg, X. Li, Y. Ekinci
Grayscale e-beam lithography: Effects of a delayed development for well-controlled 3D patterning
Microelectron. Eng. 225, 111272 (2020)L. Driencourt, F. Federspiel, D. Kazazis, L.-T. Tseng, R. Frantz, Y. Ekinci, R. Ferrini, B. Gallinet
Electrically tunable multicolored filter using birefringent plasmonic resonators and liquid crystals
ACS Photonics 7, 444 (2020)I. Mochi, S. Fernandez, R. Nebling, U. Locans, R. Rajeev, A. Dejkameh, D. Kazazis, L.-T. Tseng, S. Danylyuk, L. Juschkin, Y. Ekinci
Quantitative characterization of absorber and phase defects on EUV reticles using coherent diffraction imaging
J. Micro/Nanolith. MEMS MOEMS 19, 014002 (2020)L.-T. Tseng, D. Kazazis, X. Wang, C. M. Popescu, A. Robinson Y. Ekinci
Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks
Microelectron. Eng. 210, 8 (2019)S. Fernandez, D. Kazazis, R. Rajendran, I. Mochi, P. Helfenstein, S. Yoshitake, and Y. Ekinci
A comparative study of EUV absorber materials using lensless actinic imaging
J. Micro/Nanolith. MEMS MOEMS 18, 013506 (2019)I. Mochi, M. Timmermans, E. Gallagher, M. Mariano, I. Pollentier, R. Rajendran, P. Helfenstein, S. Fernandez, D. Kazazis, and Y. Ekinci
Experimental evaluation of the impact of carbon nanotube EUV pellicles on reticle imaging
J. Micro/Nanolith. MEMS MOEMS 18, 014002 (2019)L. Wu, J. M. Baljozovic, G. Portale, D. Kazazis, M. Vochenhuber, T. Jung, Y. Ekinci, and S. Castellanos
Mechanistic insights in Zr-, and Hf-based molecular hybrid EUV photoresists
J. Micro/Nanolith. MEMS MOEMS 18, 013504 (2019)X. Wang, L.-T. Tseng, D. Kazazis, Z. Tasdemir, M. Vockenhuber, I. Mochi, and Y. Ekinci
Studying resist performance for contact holes printing using EUV interference lithography
J. Micro/Nanolith. MEMS MOEMS 18, 013501 (2019)Y. Zhang, J. Haitjema, M. Baljozovic, M. Vochenhuber, D. Kazazis, T. Jung, and A. M. Brouwer
Dual-tone Application of a Tin-Oxo Cage Photoresist Under E-beam and EUV Exposure
J. Photopolym. Sci. Technol. 31, 249 (2018)J. Schluck, J. Feilhauer, K. Pierz, H. W. Schumacher, D. Kazazis, U. Gennser, and T. Heinzel
Quantum signatures of competing electron trajectories in antidot superlattices
Phys. Rev. B 98, 165415 (2018)D. Kazazis, L.-T. Tseng, and Y. Ekinci
Improving the Resolution and Throughput of Achromatic Talbot Lithography
J. Vac. Sci. Technol. B 36, 06J501 (2018)S. Gottlieb, D. Kazazis, I. Mochi, L. Evangelio, M. Fernández-Regúlez, Y. Ekinci, and F. Perez-Murano
Nano-confinement of block copolymers in high accuracy topographical guiding patterns: modelling the emergence of defectivity due to incommensurability
Soft Matter 14, 6799 (2018)A. Nachawaty, M. Yang, S. Nanot, D. Kazazis, R. Yakimova, W. Escoffier, and B. Jouault
Large nonlocality in macroscopic Hall bars made of epitaxial graphene
Phys. Rev. B 98, 045403 (2018)J. Schluck, M. Hund, T. Heckenthaler, T. Heinzel, N. H. Siboni, J. Horback, K. Pierz, H. W. Schumacher, D. Kazazis, U. Gennser, and D. Mailly
Linear negative magnetoresistance in two-dimensional Lorentz gases
Phys. Rev. B 97, 115301 (2018)N. H. Siboni, J. Schluck, K. Pierz, H. W. Schumacher, D. Kazazis, J. Horbach, T. Heinzel
Nonmonotonic classical magnetoconductivity of a two-dimensional electron gas in a disordered array of obstacles
Phys. Rev. Lett. 120, 056601 (2018)R. Fallica, D. Kazazis, I. Mocchi, H. Schift, Y. Ekinci, R. Kirchner, and A. Voigt
Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
J. Vac. Sci. Technol. B 35, 061603 (2017)A. Nachawaty, M. Yang, W. Desrat, S. Nanot, B. Jabakhanji, D. Kazazis, R. Yakimova, A. Cresti, W. Escoffier, and B. Jouault
Magnetic field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point
Phys. Rev. B 96, 075442 (2017)J. Haitjema, Y. Zhang, M. Vockenhuber, D. Kazazis, Y. Ekinci, A. M. Brouwer
Extreme ultraviolet patterning of tin-oxo cages
J. Micro/Nanolith. MEMS MOEMS 16, 033510 (2017)I. Mochi, P. Helfenstein, I. Mohacsi, R. Rajeev, D. Kazazis, S. Yoshitake, and Y. Ekinci
RESCAN: An actinic lensless microscope for defect inspection of EUV reticles
J. Micro/Nanolith. MEMS MOEMS 16, 041003 (2017)K. Papatryfonos, D. Saladukha, K. Merghem, S. Joshi, F. Lelarge, S. Bouchoule, D. Kazazis, S. Guilet, L. Le Gratiet, T. J. Ochalski, G. Huyet, A. Martinez, and A. Ramdane
Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings
J. Appl. Phys. 121, 053101 (2017)M. Yang, O. Couturaud, W. Desrat, C. Consejo, D. Kazazis, R. Yakimova, M. Syväjärvi, M. Goiran, J. Béard, P. Frings, M. Pierre, A. Cresti, W. Escoffier, and B. Jouault
Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
Phys. Rev. Lett. 117, 237702 (2016)B. A. Piot, W. Desrat, D. K. Maude, D. Kazazis, A. Cavanna, and U. Gennser
Disorder-induced stabilization of the quantum Hall ferromagnet
Phys. Rev. Lett. 116, 106801 (2016)R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier, and F. Schopfer
Quantum Hall resistance standard in graphene devices under relaxed experimental conditions
Nature Nanotechnol. 10, 965–971 (2015)J. Schluck, S. Fasbender, T. Heinzel, K. Pierz, H. Schumacher, D. Kazazis and U. Gennser
Commensurability resonances in two-dimensional magnetoelectric lateral superlattices
Phys. Rev.B 91, 195303 (2015)F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer, and W. Poirier
Quantum Hall resistance standard based on graphene grown by chemical vapor deposition on silicon carbide
Nature Commun. 6, 6806 (2015)B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
Magnetoresistance of disordered graphene: from low to high temperatures
Phys. Rev. B 90, 035423 (2014)B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B. C. Camargo, Y. Kopelevich, J. Camassel, and B. Jouault
Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing
Phys. Rev. B 89, 085422 (2014)E. Pallecchi, M. Ridene, D. Kazazis, F. Schopfer, W. Poirier, M. O. Goerbig, D, Mailly, and A. Ouerghi
Insulating to relativistic quantum Hall transition in disordered graphene
Sci. Rep. 3, 1791 (2013)E. Pallecchi, M. Ridene, D. Kazazis, C. Mathieu, F. Schopfer, W. Poirier, D, Mailly, and A. Ouerghi
Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
Appl. Phys. Lett. 100, 253109 (2012)D. Kazazis, B. Schuler, M. Granada, U. Gennser, G. Faini, M. Cerchez, and T. Heinzel
Sensing domain wall pinning in the longitudinal magnetoresistance of a two-dimensional electron gas
Superlattice Mistrost. 52, 11 (2012)F. C. Sabou, D. Kazazis, R. I. Bahar, J. Mundy, W. Patterson, and A. Zaslavsky
Markov Chain Analysis of Thermally-Induced Soft Errors in Nanoscale CMOS Circuits
IEEE Trans. Dev. Mater. 9, 494 (2009)D. Kazazis, S. Guha, N. A. Bojarczuk, A. Zaslavsky, and H.-C. Kim
Substrate Fermi Level Effects in Photocatalysis on Oxides: Properties of Ultrathin TiO2/Si Films
Appl. Phys. Lett. 95, 064103 (2009)D. Kazazis, P. Jannaty, A. Zaslavsky, C. Le Royer, C. Tabone, L. Clevalier, and S. Cristoloveanu
Tunneling Field-Effect Transistor with Epitaxial Junction in Thin Germanium-on-Insulator
Appl. Phys. Lett. 94, 263508 (2009)D. Kazazis, A. Zaslavsky, E. Tutuc, N. A. Bojarczuk, and S. Guha
Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs
Semicond. Sci. Technol. 22, S1 (2007)E. J. Preisler, S. Guha, B. R. Perkins, D. Kazazis, A. Zaslavsky
Ultrathin Epitaxial Germanium on Crystalline Oxide Metal-Oxide-Semiconductor-Field-Effect Transistors
Appl. Phys. Lett. 86, 223504 (2005)
Conference Proceedings
Conference Proceedings
T. Shen, D. Kazazis, H.-S. Kim, A. Dejkameh, R. Nebling, Y. Ekinci, and I. Mochi
EUV mask defect material characterization through actinic lensless imaging
Proc. SPIE 12053, 120530H (2022)T. Allenet, M. Vockenhuber, C.-K. Yeh, J. G. Santaclara, L. van Lent-Protasova, Y. Ekinci, and D. Kazazis
EUV resist screening update: progress towards high-NA lithography
Proc. SPIE 12055, 120550F (2022)T. Allenet, M. Vockenhuber , C-K. Yeh, D. Kazazis, J. G. Santaclara, L. van Lent-Protasova, and Y. Ekinci
Progress in EUV resist screening by interference lithography for high-NA lithography
Proc. SPIE 11854, 118540N (2021)T. Robinson, J. LeClaire, I. Mochi, R. M. Nebling, Y. Ekinci, and D. Kazazis
Ongoing development of ultrafast DUV pulse laser repair for EUV photomasks
Proc. SPIE 11908, 11908OO (2021)T. Manouras, D. Kazazis, Y. Ekinci
Chemically-amplified backbone scission (CABS) resist for EUV lithography
Proc. SPIE 11609, 116090H (2021)I. Mochi, H.-S. Kim, A. Dejkameh, R. Nebling, D. Kazazis, U. Locans, T. Shen, and Y. Ekinci
Lensless EUV mask inspection for anamorphic patterns
Proc. SPIE 11609, 116090M (2021)H. Kim, U. Locans, R. Nebling, A. Dejkameh, D. Kazazis, Y. Ekinci, and I. Mochi
High resolution and uniform image reconstruction in a large field-of-view for EUV actinic mask review
Proc. SPIE 11518, 1151809 (2020)T. Robinson, J. LeClaire, I. Mochi, R. M. Nebling, Y. Ekinci, and D. Kazazis
Laser repair and clean of extreme ultraviolet lithography photomasks
Proc. SPIE 11518, 115180X (2020)I. Mochi, H.-S. Kim, U. Locans, A. Dejkameh, R. Nebling, D. Kazazis, and Y. Ekinici
Illumination control in lensless imaging for EUV mask inspection and review
Proc. SPIE 11323, 113231I (2020)L. Driencourt, F. Federspiel, D. Kazazis, L.-T. Tseng, R. Frantz, Y. Ekinci, R. Ferrini, and B. Gallinet
Electrically tunable filter based on plasmonic phase retarder and liquid crystals
Proc. SPIE 11290, 112901A (2020)R. Nebling, I. Mochi, D. Kazazis, U. Locans, A. Dejkameh, and Y. Ekinci
EUV reticle inspection using phase retrieval algorithms: a performance comparison
Proc. SPIE 11147, 111470R (2019)I. Mochi, U. Locans, A. Dejkameh, R. Nebling, D. Kazazis, L.-T. Tseng, and Y. Ekinci
Resolution enhancement for lensless mask metrology with RESCAN
Proc. SPIE 11147, 111471D (2019)I. Mochi, D. Kazazis, L.-T. Tseng, S. Fernandez, R. Rajendran, U. Locans, A. Dejkameh, R. Nebling, Y. Ekinci
Lensless metrology for semiconductor lithography at EUV
Proc. SPIE 11057, 1105703 (2019)I. Mochi, S. Fernandez, R. Nebling, U. Locans, P. Helfenstein, R. Rajendran, A. Dejkameh, D. Kazazis, L.-T. Tseng, and Y. Ekinci
Absorber and phase defect inspection on EUV reticles using RESCAN
Proc. SPIE 10957, 109570W (2019)G. O'Callaghan, C. Popescu, A. McClelland, D. Kazazis, J. Roth, W. Theis, Y. Ekinci, and A. P. G. Robinson
Multi-trigger resist: novel synthesis improvements for high resolution EUV lithography
Proc. SPIE 10960, 109600C (2019)T. Gädda, L. N. Dang, M. Laukkanen, K. Karaste, O. Kähkönen,E. Kauppi, D. Kazazis, Y. Ekinci, and J. T. Rantala
Advanced EUV negative tone resist and underlayer approaches exhibiting sub-20nm half-pitch resolution
Proc. SPIE 10960, 109600B (2019)R. Rajeev, S. Fernandez, I. Mochi, P. Helfenstein, D. Kazazis, and Y. Ekinci
Phase defect inspection on EUV masks using RESCAN
Proc. SPIE 10809, 108090Q (2018)X. Wang, L.-T. Tseng, D. Kazazis, Z. Tasdemir, M. Vockenhuber, I. Mochi, and Y. Ekinci
Studying resist performance for contact holes printing using EUV interference lithography
Proc. SPIE 10809, 108091Z (2018)J. Rantala, T. Gädda, M. Laukkanen, L. N. Dang, K. Karaste, D. Kazazis, and Y. Ekinci
New resist and underlayer approaches toward EUV lithography
Proc. SPIE 10809, 108090X (2018)I. Mochi, M. Timmermans, E. Gallagher, M. M. Juste, I. Pollentier, R. Rajeev, P. Helfenstein, S. Fernandez, D. Kazazis, and Y.Ekinci
Experimental evaluation of the impact of EUV pellicles on reticle imaging
Proc. SPIE 10810, 108100Y (2018)C. Popescu, A. McClelland, D. Kazazis, G. Dawson, J. Roth, Y. Ekinci, W. Theis, and A. P. G. Robinson
Multi-trigger resist for electron beam and extreme ultraviolet lithography
Proc. SPIE 10775, 1077502 (2018)C. Popescu, D. Kazazis, A. McClelland, G. Dawson, J. Roth, W. Theis, Y. Ekinci, and A. P. G. Robinson
High-resolution EUV lithography using a multi-trigger resist
Proc. SPIE 10583, 105831L (2018)T. Manouras, D. Kazazis, E. Koufakis, Y. Ekinci, M. Vamvakaki, and P. Argitis
Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking
Proc. SPIE 10583, 105831R (2018)I. Mochi, P. Helfenstein, R. Rajendran, S. Fernandez, D. Kazazis, and Y. Ekinci
Through-pellicle inspection of EUV masks
Proc. SPIE 10583, 105831I (2018)S. Fernandez, I. Mochi, P. Helfenstein, R. Rajendran, D. Kazazis, and Y. Ekinci
A comparative study of EUV absorber materials using actinic lensless imaging of EUV photomasks
Proc. SPIE 10583, 105831H (2018)P. Helfenstein, I. Mochi, R. Rajendran, S. Fernandez, D. Kazazis, and Y. Ekinci
High-throughput defect inspection for arbitrarily shaped EUV absorber patterns
Proc. SPIE 10585, 1058509(2018)S. Castellanos, L. Wu, M. Baljozovic, G. Portale, D. Kazazis, M. Vockenhuber, Y. Ekinci, and T. Jung
Ti, Zr, and Hf-based molecular hybrid materials as EUV photoresists
Proc. SPIE 10583, 105830A (2018)I. Mochi, P. Helfenstein, R. Rajeev, S. Fernandez, D. Kazazis, S. Yoshitake, and Y. Ekinci
Actinic inspection of EUV reticles with arbitrary pattern design
Proc. SPIE 10450, 1045007 (2017)C. Popescu, A. McClelland, G. Dawson, J. Roth, D. Kazazis, Ya. Ekinci, W. Theis, and A. P. G. Robinson
Multi-trigger resist for electron beam lithography
Proc. SPIE 10446, 1044608 (2017)J. Haitjema, Y. Zhang, M. Vockenhuber, D. Kazazis, Y. Ekinci, A. M. Brouwer
Extreme ultraviolet patterning of tin-oxo cages
Proc. SPIE 10143, 1014325 (2017)J. Brun-Picard, R. Ribeiro-Palau, F. Lafont, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier, and F. Schopfer
Convenient graphene-based quantum Hall resistance standards
2016 Conference on Precision Electromagnetic Measurements (CPEM 2016), pp. 1-2 (2016)D. Kazazis, E. Bourhis, J. Gierak, O. Bourgeois, T. Antoni, and U. Gennser
Suspended two-dimensional electron and hole gases
Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS 2012), AIP Conf. Proc. 1566, 249 (2013)H. Li, J. Mundy, W. Patterson, D. Kazazis, A. Zaslavsky and R. I. Bahar
Thermally Induced Soft Errors in Nanoscale CMOS circuits
IEEE International Symposium on Nanoscale Architectures, (NANOSARCH 2007), pp. 62-69 (2007)D. Kazazis, A. Zaslavsky, E. Tutuc, N.A. Bojarczuk, and S. Guha
Negative differential resistance in ultra-thin Ge-on-insulator FETs
3rd International SiGe Technology and Device Meeting (ISTDM 2006), pp. 1-2 (2006)H. Li, J. Mundy, W. Patterson, D. Kazazis, A. Zaslavsky and R. I. Bahar
A Model for Soft Errors in the Subthreshold CMOS Inverter
The Second Workshop on System Effects of Logic Soft Errors (SELSE 2)(2006)D. M. Binkley, M. Bucher, and D. Kazazis
Modern analog CMOS design from weak through strong inversion
Proceedings of the European Conference on Circuit Theory and Design (ECCTD 2003), pp. I-8-I-13, (2003)M. Bucher, D. Kazazis, F. Krummenacher, D. Binkley, D. Foty, Y. Papananos
Analysis of Transconductances at All Levels of Inversion in Deep Submicron CMOS
9th IEEE Int. Conf. on Electronics, Circuits and Systems (ICECS 2002), pp. 1183-1186, (2002)M. Bucher, J.M. Sallese, F. Krummenacher, D. Kazazis, C. Lallement, W. Grabinski, C. Enz
EKV 3.0: An Analog Design-Oriented MOS Transistor Model
9th Int. Conf. on Mixed Design (MIXDES 2002), pp. 51-54 (2002)
Book Chapters/Theses
Book Chapters/Theses
W. Van Den Daele, S. Cristoloveanu, E. Augendre, C. Le Royer, J.-F. Damlencourt, D. Kazazis, and A. Zaslavsky
GeOI as a Platform for Ultimate Devices
in Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy, edited by S. Luryi, J. Xu, and A. Zaslavsky, John Wiley and Sons, Inc., Hoboken, New Jersey (2010)D. Kazazis
Ultrathin Ge/High-κ Dielectric Structures for End-of-Roadmap Devices and Other Applications
Ph.D. Thesis, Brown University, Providence, RI, May 2009 (Single-sided print) (Double-sided print)D. Kazazis
Characterization and Modeling of the MOS Transistor over the Continuum of Inversion Level and Channel Length
Diploma Thesis, National Technical University, Athens, Greece, July 2001 (Download)
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