Publications

2026

1. S.R.Yin. et al, "The role of grain boundary plays in ferroelectric switching" Advanced Science (invited)

2. Y.C. Su, et al. "Reduced coercive voltage of Hf0.5Zr0.5O2 by polar-polar interaction" Advanced Functional Materials (invited)

3. S.H. Chou, Y.W. Chen, Y.C. Chiu, H.T. Chung, K.L Tai, C.M. Lee, S.J. Lin, W.W. Wu, Y. L. Huang* "Accelerated Evaluation of EUV Pellicle Materials Degradation under Hydrogen Plasma Exposure" to be submitted.

4. "Time-resolved study of Jahn-Teller polarons in ferromagnetic thin films La0.7Sr0.3MnO3/BiFeO3 by dual-color pump-probe spectroscopy" to be submitted

2025

1. Y.D. Liou, S.C. Chang, H.R. Wang, P. Kaur, S.H. Chen, B.C. Chen, Y.J. Wang, L. T. Quynh, Y. L. Huang, Y. Cao, Y.C. Chen, Z. Liu, Y.H. Chu, Y.C. Lin, K. Suenaga, J.C. Yang. "Deterministic Switching of Antipolar Variants in Antiferroelectric Membranes." Advanced Materials, e19717 (2025).

2. Y.C. Lee, X. Guan, L. Chen, Q. Shi* Y. L. Huang* "Ultrafast phase transition in VO2 membrane: The role of mechanics" ACS Applied Electronic Materials 7, 10458 (2025).

3. H.Y. Cheng, M.J. Ye, L.H. Chen, Y.Y. Wang, S.W. Chu, Y. L. Huang, Y.J. Lu, K.P. Chen, K.H. Lin "Dynamic Control of Photoresponse in VO2 Through Phase Manipulation" Advanced Optical Materials, 13(30), e01935 (2025).

4. Y. L. Huang*, M. Song, C. M. Lee, Y. W. Chen, C. Y. Chiang, S. H. Chou, L. C. Hsu, H. R. Liu, G. L. Chen, S. Y. Yang, Y. J. Chang, I J. Wang, Y. C. Hsin, Y. H. Su, J. H. Wei, F. Xue, S. X. Wang, X. Bao "A 64-kilobit spin–orbit torque magnetic random-access memory based on back-end-of-line-compatible β-tungsten" Nature Electronics 8, 794–802 (2025). *Corresponding author
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   5. 科技新報: https://technews.tw/2025/09/22/sot-mram-breakthrough/v
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   9. cmMoney

5. Y. W. Chen, T. Y. Yu, C. W. Huang, T. H. Yu, Y. C. Su, C. R. Chen, W. C. Hung, P. Y. Chang, B. Prasad, Y. C. Lin, R. Ramesh, Y. L. Huang* "An electrode design strategy to minimize ferroelectric imprint effect" Advanced Science, e70011 (2025). *Corresponding author

6. X. Chang, J. Liu, Y. Tao, B. Wu, Y. Lin, W. Zheng, Y. Li, Y. L. Huang, Q. Shi, L. Lei "Anomalous Phonon Evolution via Out-of-Plane Strain Engineering in van der Waals Epitaxial VO2 Film" Inorganic Chemistry 64(29), 14989-14998 (2025).

7. M. F. Pervez, H. Zhang, Y. L. Huang, L. Caretta, R. Ramesh, C. Ulrich"Continuous collapse of the spin cycloid in  BiFeO3 thin films under an applied magnetic field probed by neutron scattering" Physical Review B 111, 174426 (2025).

8. M. Müller, B. Yan, H. Ko, Y. L. Huang, H. Lu, A. Gruverman, R. Ramesh, M. D. Rossell, M. Fiebig, M. Trassin "Reversible control over the distribution of chemical inhomogeneities in multiferroic BiFeO3" Nature Communications 16, 1-9 (2025).

2024

1. H. K. Chang, K. Y. Chi, Y. L. Lin, Y. H. Lai, Y. L. Huang, C. F. Pai, C. Y. Yang "Spin–Orbit Torque Booster in an Antiferromagnet via Facilitating a Global Antiferromagnetic Order: A Route toward an Energy-Efficient Memory" ACS Applied Materials & Interfaces 16, 65037 (2024).

2. R. Ramesh, S. Salahuddin, S. Datta, C. H Diaz, D. E Nikonov, I. A Young, D. Ham, M.F. Chang, W.S. Khwa, A.S. Lele, C. Binek, Y. L. Huang, Y.C. Sun, Y.H. Chu, B. Prasad, M. Hoffmann, J.M. Hu, Z. J. Yao, L. Bellaiche, P. Wu, J. Cai, J. Appenzeller, S. Datta, K. Y Camsari, J. Kwon, J. A. C Incorvia, I. Asselberghs, F. Ciubotaru, S. Couet, C. Adelmann, Y. Zheng, A. M Lindenberg, P. G Evans, P. Ercius, I. P Radu "Roadmap on low-power electronics" APL Materials 12, 099201 (2024). 

3. D. C Vaz, C.C. Lin, J. J Plombon, W.Y. Choi, I. Groen, I. C Arango, A. Chuvilin, L. E Hueso, D. E Nikonov, H. Li, P. Debashis, S. B Clendenning, T. A Gosavi, Y. L. Huang, B. Prasad, R. Ramesh, A. Vecchiola, M. Bibes, K. Bouzehouane, S. Fusil, V. Garcia, I. A Young, F. Casanova "Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices" Nature Communications 15, 1902 (2024).

2023

1. Y.F. Chen, C.L. Hsieh, P.Y. Lin, Y.C. Liu, M.J. Lee, L.R. Lee, S. Zheng, Y.L. Lin, Y. L. Huang, J.T. Chen "Guard Cell‐Inspired Ion Channels: Harnessing the Photomechanical Effect via Supramolecular Assembly of Cross‐Linked Azobenzene/Polymers" Small 20, 2305317 (2023).

2. M. D.C., D.F. Shao, V.D.H. Hou, A. Vailionis, P. Quarterman, A. Habiboglu, M.B. Venuti, F. Xue, Y. L. Huang, C.M. Lee, M. Miura, B. Kirby, C. Bi, X. Li, Y. Deng, S.J. Lin, W. Tsai, S. Eley, W.G. Wang, J.A. Borchers, E.Y. Tsymbal, S.X. Wang "Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3" Nature Materials 22, 591 (2023).

3. F. Xue, S.J. Lin, M. Song, W. Hwang, C. Klewe, C.M. Lee, E. Turgut, P. Shafer, A. Vailionis, Y. L. Huang, W. Tsai, X. Bao, S.X. Wang "Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N" Nature Communications 14, 3932 (2023).

2022

1. C.Y. Hu, Y.F. Chiu, C.C. Tsai, C.C. Huang, K.H. Chen, C.W. Peng, C.M. Lee, M.Y. Song, Y. L. Huang, S.J. Lin, C.F. Pai "Toward 100% Spin–Orbit Torque Efficiency with High Spin–Orbital Hall Conductivity Pt–Cr Alloys" ACS Applied Electronic Materials 4, 1099 (2022).

2. Q. Shi*, E. Parsonnet, X. Cheng, N. Fedorova, R.C. Peng, A. Fernandez, A. Qualls, X. Huang, X. Chang, H. Zhang, D. Pesquera, S. Das, D. Nikonov, I. Young, L.Q. Chen, L.W. Martin, Y. L. Huang*, J. Íñiguez, R. Ramesh* "The role of lattice dynamics in ferroelectric switching" Nature Communications 13, 1110 (2022). *Corresponding author.

2021

1.  N.Li, R. Zhu, X. Cheng, H.J. Liu, Z. Zhang, Y. L. Huang, Y.H. Chu, L.Q. Chen, Y. Ikuhara, P. Gao "Dislocation-induced large local polarization inhomogeneity of ferroelectric materials" Scripta Materialia 194, 113624 (2021).

2. S.J. Lin*, Y. L. Huang*, M.Y. Song, C.M. Lee, F. Xue, G.L. Chen, S.Y. Yang, Y.J. Chang, I.J. Wang, Y.C. Hsin, Y.H. Su, J.H. Wei, C.F. Pai, S.X. Wang, C.H. Diaz "Challenges toward low-power SOT-MRAM" *equal contribution, 2021 IEEE International Reliability Physics Symposium (IRPS) (2021). 

3. F. Xue, S.J. Lin, P. Li, W. Hwang, Y. L. Huang, W. Tsai, S.X. Wang "Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer" APL Materials 9, (2021).

4. M. Müller, Y. L. Huang, S. Vélez, R. Ramesh, M. Fiebig, M. Trassin "Training the Polarization in Integrated La0.15Bi0.85FeO3‐Based Devices" Advanced Materials 33, 2104688 (2021).

5. D.C. Vaz, C.C. Lin, J. Plombon, W.Y. Choi, I. Groen, I. Arango, D.E. Nikonov, H. Li, P. Debashis, S. B. Clendenning, T. A. Gosavi, V. Garcia, S. Fusil, M. Bibes, Y. L. Huang, B. Prasad, R. Ramesh, F. Casanova, I. A, Young "Functional demonstration of a fully integrated magneto-electric spin-orbit device" 2021 IEEE International Electron Devices Meeting (IEDM), 32.4.1 (2021).

2020

1.  K. Hofhuis, A. Hrabec, H. Arava, N. Leo, Y. L. Huang, R. V. Chopdekar, S. Parchenko, A. Kleibert, S. Koraltan, C. Abert, C. Vogler, D. Suess, P. M. Derlet, L. J. Heyderman ”Thermally superactive artificial kagome spin ice structures obtained with the interfacial Dzyaloshinskii-Moriya interaction”, Physical Review B 102, 180405 (2020).

2. E. Parsonnet, Y. L. Huang, T. Gosavi, A. Qualls, D. Nikonov, C. C. Lin, I. Young, J. Bokor, L. W. Martin, and R. Ramesh ”Toward Intrinsic Ferroelectric Switching in Multiferroic BiFeO3”, Physical Review Letters 125, 067601 (2020).

3. D. Pesquera, E. Parsonnet, A. Qualls, R. Xu, A. J. Gubser, J. Kim, Y. Jiang, G. Velarde, Y. L. Huang, H. Y. Hwang, R. Ramesh, L. W. Martin, ”Beyond substrates: strain engineering of ferroelectric membranes”, Advanced Materials 32, 2003780 (2020).

4. Y. L. Huang, D. Nikonov, R. V. Chopdekar, C. Addiego, L. Zhang, B. Prasad, H.-J. Liu, A. Farhan, Y. H. Chu, M. Yang, Z. Q. Qiu, C. C. Lin, T. Gosavi, L. W. Martin, J. Íñiguez, X. Pan, I. Young, R. Ramesh, ‘Manipulating magnetoelectric energy landscape in multiferroics”, Nature Communications 11, 2836 (2020).

5. B. Prasad*, Y. L. Huang*, J. Steffes, R. Chopdekar, S. L. Hsu, Y. Tang, S. Saremi, V. Thakare, L. Zhang, S. Das, H. Taz, S. Manipatruni, C. C. Lin, T, Gosavi, D. Nikonov, A. Everhardt, M. Yang, Z. Q. Qiu, L. Martin, B. D. Huey, J. Iniguez, I. Young, R Ramesh, “ Ultralow voltage manipulation of ferromagnetism”, *equal contribution, Advanced Materials 32, 2001943 (2020).

6. Y. L. Huang, L. Zheng, P. Chen, X. Cheng, S. L. Hsu, T. Yang, X. Wu, L. Ponet, R. Ramesh, L. Q. Chen, S. Artyukhin, Y. H. Chu, and K. Lai “Unexpected giant microwave conductivity in a nominally silent BiFeO3 domain wall”, Advanced Materials 32, 1905132 (2020).

7. H. Taz, B. Prasad, Y. L. Huang, Z. Chen, S. L. Hsu, R. Xu, V. Thakare, T. S. Sakthivel, C. Liu, M. Hettick, R. Mukherjee, S. Seal, L. Martin, A. Javey, G. Duscher, R. Ramesh, R. Kalyanaraman “Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics”, Scientific reports 10, 1 (2020).

2019

1. Y. L. Huang, B. C. Huang, Y. T. Wang, F. Xue, J. C. Lin, H. J. Liu, R. Huang, J. Y. Lin, C. S. Chang, L. Q. Chen, Y. P. Chiu, and Y. H. Chu “Anisotropic superconductivity induced by periodic multiferroic domain patterns”, NPG Asia Mater 11, 73 (2019).

2. Y. L. Huang, H. J. Liu, C. H. Ma, P. Yu, Y. H. Chu, and J. C. Yang “Pulsed laser deposition of complex oxide heteroepitaxy”, Chinese Journal of Physics 60, 481 (2019).

3. C. C. Lin, T. Gosavi, D. Nikonov, Y. L. Huang, B. Prasad, W. Choi, I. Groen, J. Chen, DC Mahendra, H. Liu, K. Oguz, E. S. Walker, J. Plombon, B. Buford, C. H. Naylor, J. P. Wang, F. Casanova, R. Ramesh, I. A Young “Experimental demonstration of integrated magneto-electric and spin-orbit building blocks implementing energy-efficient logic”, 2019 IEEE International Electron Devices Meeting, (2019).

4. L. Zhang, Y. L. Huang, G. Velarde, A. Ghosh, S. Pandya, D. Garcia, R. Ramesh, L. W. Martin, “Enhanced pyroelectric properties of Bi1xLaxFeO3 thin films”, APL Materials 7, 1111111 (2019).

5. M. Saccone, A. Scholl, S. Velten, S. Dhuey, K. Hofhuis, C. Wuth, Y. L. Huang, Z. Chen, R. V. Chopdekar, A. Farhan ”Towards artificial Ising spin glasses: Thermal ordering in randomized arrays of Ising-type nanomagnets”, Physical Review B 99, 224403 (2019). 

6. M. Saccone, K. Hofhuis, Y. L. Huang, S. Dhuey, Z. Chen, A. Scholl, R. V. Chopdekar, S. van Dijken, A. Farhan, ”The dipolar Cairo lattice: geometrical frustration and short-range correlations”, Physical Review Materials 3, 10440 (2019). 

7. Y. D. Liou, Y. Y. Chiu, R. T. Hart, C. Y. Kuo, Y. L. Huang, Y. C. Wu, R. V. Chopdekar, H. J. Liu, A. Tanaka, C. T. Chen, C. F. Chang, L. H. Tjeng, Y. Cao, V. Nagarajan, Y. H. Chu, Y. C. Chen, J. C. Yang “Deterministic optical control of room temperature multiferroicity in BiFeO3 thin films”, Nature Materials 6, 1 (2019). 

8. M. Li, B. Wang, H. J. Liu, Y. L. Huang, J. Zhang, X. Ma, K. Liu, D. Yu, Y. H. Chu, L. Q. Chen, P. Gao “Direct observation of weakened interface clamping effect enabled ferroelastic domain switching”, Acta Materialia 171, 184-189 (2019).

9. A. Farhan, M. Saccone, C. F. Petersen, S. Dhuey, R. V. Chopdekar, Y. L. Huang, N. Kent, Z. Chen, M. J. Alava, T. Lippert, A. Scholl, S. v. Dijken “Emergent magnetic monopole dynamics in macroscopically degenerate artificial spin ice”, Science Advances 5, eaav6380 (2019). 

10. S. Manipatruni, D. E. Nikonov, C. C. Lin, T. Gosavi, H. Liu, P. Bhagwati, Y. L. Huang, E. Bonturim, R. Ramesh, I. A. Young “Magnetoelectric Spin Orbit Logic with Non-volatility and Energy Efficiency”, Nature 565, 35 (2019).

2018

1. S. Manipatruni, D. E. Nikonov, C. C. Lin, P. Bhagwati, Y. L. Huang, A. R. Damodaran, Z. Chen, R. Ramesh, I. A. Young “Voltage control of uni-directional anisotropy in ferromagnet- multiferroic system”, Science Advances 4, eaat4229 (2018). 

2. Z. Chen, Z. Chen, C. Y. Kuo, Y. Tang, L. R. Dedon, Q. Li, L. Zhang, C. Klewe, Y. L. Huang, B. Prasad, A. Farhan, M. Yang, J. D. Clarkson, S. Das, S. Manipatruni, A. Tanaka, P. Shafer, E. Arenholz, A. Scholl, Y. H. Chu, Z. Qiu, Z. Hu, L. H. Tjeng, R. Ramesh, L. W. Wang, L. W. Martin “Complex strain evolution of polar and magnetic order in multiferroic BiFeO3 thin films”, Nature Communications 9, 3764 (2018). 

3. S. Yang, R. C. Peng, Q. He, Y. L. Huang, Y. Huang, J. C. Yang, T. Chen, J. Guo, L. Q. Chen, Y. H. Chu, C.W. Nan, P. Yu “Electric field writing of ferroelectric nanodomains near 71 domain walls with switchable interfacial conductivity”, Annalen der Physik 530, 1800130 (2018). 

4. M.Li, X.Cheng, N. Li, H. J. Liu, Y. L. Huang, K. Liu, Y. H. Chu, D. Yu, L. Q. Chen, Y. Ikuhara, P. Gao “Atomic-scale mechanism of internal structural relaxation screening at polar interfaces”, Physical Review B 97, 180103 (2018). 

5. L. Zheng, H. Dong, X. Wu, Y. L. Huang, W. Wang, W. Wu, Z. Wang, K. Lai “Interferometric imaging of nonlocal electromechanical power transduction in ferroelectric domains”, Proceedings of the National Academy of Sciences, 201722499 (2018).

2017

1. P. Gao, Z. Zhang, M. Li, R. Ishikawa, B. Feng, H. J. Liu, Y. L. Huang, N. Shibata, X. Ma, S. Chen, J. Zhang, K. Liu, E. G. Wang, D. Yu, L. Liao, Y. H. Chu, Y. Ikuhara ”Possible absence of critical thickness and size effect in ultrathin perovskite ferroelectric films”, Nature Communications 8, 15549 (2017). 

2. T. N. Lam, Y. L. Huang, K. C. Weng, Y. L. Lai, M. W. Lin, Y. H. Chu, H. J. Lin, C. C. Kaun, D. H. Wei, Y. C. Tseng, Y. J. Hsu ”Spin filtering of a termination-controlled LSMO/Alq3 heterojunction for an organic spin valve”, Journal of Materials Chemistry C 5, 9128 (2017).

Before 2016

1. Y. L. Huang, W. S. Chang, H. H. Kuo, H. J. Liu, K. A. Tsai, J. W. Chen, C. L. Wu, Y. C. Chen, Y. J. Hsu, and Y. H. Chu “Enhanced photoelectrochemical performance of Au/multiferroic BiFeO3 heterostructures”, Nanoscale 8, 15795 (2016).

2. J. C. Yang, Y. L. Huang, and Y. H. Chu ”Single Phase Type-I Multiferroics: resolving the seemingly contradictive requirements for ferroelectricity and magnetism”, in the book of Multiferroic Materials: Properties, Techniques, and Applications, Taylor & Francis Group, 33 (2016).

3. C. Y. Kuo, Z. Hu, J. C. Yang, S. C. Liao,Y. L. Huang, B. Yan, R. K. Vasudevan, H. J. Liu, E. Pellegrin, S. V. Kalinin, C. H. Lai, T. W. Pi, L. H. Tjeng and Y. H. Chu “Single antiferromagnetic axis in multiferroic BiFeO3”, Nature Communications 7, 12712 (2016).

4. Y. Ikuhara, P. Gao, H. J. Liu, Y. L. Huang, Y. H. Chu, R. Ishikawa, B. Feng, Y. Jiang, N. Shibata, E. G. Wang ”Atomic mechanism of polarization-controlled surface reconstruction in ferroelectric thin films”, Nature Communications 7, 15549 (2016). 

5. C. Ju, J. C. Yang, C. Luo, P. Shafer, H. J. Liu, Y. L. Huang, H. H. Kuo, F. Xue, C. W. Luo, L. Q. Chen, Q. He, P. Yu, E. Arenholz, X. M. Lu, and Y. H. Chu “Anomalous electronic anisotropy in La0.7Sr0.3MnO3/BiFeO3 heterostructure”, Advanced Materials 28, 11318 (2016). 

6. 30. J. C. Yang, Y. L. Huang, Q. He, and Y. H. Chu “Multifunctionalities driven by ferroic domains”, Journal of Applied Physics 116, 066801 (2014). 

7. 31. E. Strelcov, S. Jesse, Y. L. Huang, Y. C. Teng, I. Kravchenko, Y. H. Chu, and S. V. Kalinin “Space- and timeresovled mapping of ionic dynamic and electroresistive phenomena in lateral devices”, ACS Nano 7, 6806 (2013).

Patents

1. Semiconductor device and manufacturing method of semiconductor device (US Patent 12,396,372) 2025

2. Memory device (US Patent 12,356,870) 2025

3. Methods of writing and forming memory device (US Patent 12,324,165) 2025

4. Semiconductor device and method for forming the same (US Patent 12,317,513) 2025

5. Memory device and method of fabricating the same (US Patent 12,256,646) 2025

6. Memory device and manufacturing method thereof (US Patent 12,156,479) 2024

7. Memory device and manufacturing method thereof (US Patent App. 18/786,688) 2024

8. Semiconductor Device and Manufacturing Method of Semiconductor Device (US Patent App. 18/780,824) 2024

9. Semiconductor device and method for forming the same (US Patent 12,022,665) 2024

10. Memory device (US Patent 11,968,844) 2024

11. Memory device and semiconductor die (US Patent App. 17/732,548) 2023

12. Memory device (US Patent 11,765,984) 2023

13. Semiconductor device and method for forming the same (US Patent 11,723,218) 2023

14. Semiconductor device and manufacturing method of semiconductor device (US Patent 11,706,999) 2023

15. Memory device, method of forming the same, and memory array (US Patent 11,538,858) 2022