Score

• 2025   (Total Score = 4.7619 IF: 4.7619 + 8 + 14 + 10 + 8 = 44.7619)

[Poster] W. S. Yun*, "HfGeTe4", ICAMD 2025, BEXCO Busan, Busan, Republic of Korea, December 08-12, 2025. →  (3*7)/(7) = 3.0000

[Poster] W. S. Yun*, "Title", ICAMD 2025, BEXCO Busan, Busan, Republic of Korea, December 08-12, 2025. →  (3*7)/(7+1+1+1+1) = 1.909

[Poster] W. S. Yun*, "HfGeTe4", ICAE 2025, ICC Jeju, Jeju Island, Republic of Korea, November 25-28, 2025. →  (3*7)/(7) = 3.0000

[Poster] W. S. Yun*, S. W. Han, J.-S. Kim, and M.-J. Lee, "CdSbS3", ICAE 2025, ICC Jeju, Jeju Island, Republic of Korea, November 25-28, 2025. → (3*7)/(7+1+1+1) = 2.1 

[SCI-4]  "Title" → Q2

W. S. Yun, and S. W. Han → 2 persons (Role: First-Author+Corresponding Author)

Journal of Q2, (2025). → (20*7)/(7+3) = 14

[SCI-3]  "Title" → Q2

W. S. Yun, J.-S. Kim*, and M.-J. Lee* → 3 persons (Role: First-Author)

Journal of Q2, (2025). → (20*4)/(4+3+3) = 8

[SCI-2]  "Ferroelecric polarization and bandgap engineering in perovskite oxide via sulfur diffusion" → Q1

M. Ahmad†, N. X. Duong†, W. S. Yun†, A. Ullah, H. M. Kim, A. Ullah, R. W. Khan, I. W. Kim, Y.-H. Shin, M. Sheeraz*, J.-S. Bae*, and C. W. Ahn* → 12 persons (Role: First-Author)

To be determined (TBD, Q1), (2025). → (25*4)/(4*3+6*1+3*3) = 3.7037

[SCI-1]  "Twist-Induced Dimensional Crossover and Topological Phase Transitions in Bismuthene Quasicrystals" → Q1

S. W. Han†,*, W. S. Yun†, G.-B. Cha, S. Seong, J. C. Kim, H. Y. Jeong*, C. W. Ahn, K. Fukutani, R. Stania, and J. Kang  → 10 persons (Role: First-Author)

Chemistry of Materials 37, 2358−2366 (2025). (†equal contribution) [IF: 7.2] → (25*4)/(7+4+1+1+1+3+1+1+1+1) = 4.7619

• 2024   (Total Score = 27.8651)

[SCI-4]  "A promising high temperature 2D thermoelectric material: novel single-layer ZrHfS4" → Q1

W. S. Yun, S. W. Han*, H.-J. Lee, J.-S. Lee, and M.-J. Lee*  → 5 persons (Role: First-Author)

Phys. Chem. Chem. Phys. 26, 26330−26336 (2024). [IF: 2.9]  → (25*4)/(4+3+1+1+3) = 8.3333

[SCI-3]  "Mapping the low tolerance factor Bi(Li1/3Zr2/3)O3 end member and MPB composition nexus in Bi1/2Na1/2TiO3-based ceramics" → Q1

S. Ali, M. Sheeraz, A. Ullah*, W. S. Yun, A. Ullah, I. W. Kim, and C. W. Ahn*  → 7 persons (Role: Co-Author)

Chemical Engineering Journal 485, 150087 (2024). [IF: 15.1] → (25*1)/(4+4+3+1+1+1+3) = 1.4706

[SCI-2]  "Hidden Direct Bandgap of Bi2O2Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer" → Q1

S. W. Han†,*, W. S. Yun†, S. Seong, Z. Tahir, Y. S. Kim, M. Ko, S. Ryu, J.-S. Bae, C. W. Ahn, and J. Kang  → 10 persons (Role: First-Author)

Journal of Physical Chemistry Letters 15, 1590−1595 (2024). (†equal contribution) [IF: 5.7] → (25*4)/(7+4+8*1) = 5.2632

[SCI-1]  "Large electrostrictive response via tailoring ergodic relaxor state in Bi1/2Na1/2TiO3-based ceramics with Bi(Mn1/2Ce1/2)O3 end-member" → Q1

N. U. Khan†, W. S. Yun†, A. Ullah*, S. Ali, M. Sheeraz, A. Ullah, I. W. Kim, and C. W. Ahn*  → 8 persons (Role: First-Author)

Ceramics International 50, 8790−8799 (2024). (†equal contribution) [IF: 5.2] → (25*4)/(4+4+3+4*1+3) = 5.5556

[Poster] W. S. Yun*, S. W. Han, and M.-J. Lee, "Excellent thermoelectric perfromance of novel single-layer ZrHfS4", The 21st International Symposium on the Physics of Semiconductors and Applications (ISPSA 2024), Ramada Plaza Hotel Jeju, Jeju Island, Republic of Korea, June 02-06, 2024. → (3*7)/(7+1+1) = 2.3333

[Poster] W. S. Yun*, S. W. Han, H.-J. Lee, J.-S. Kim, and M.-J. Lee, "Single-layer ZrHfS4 as an excellent 2D thermoelectric material enduring in high temperatures", The 25th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-25), Univ. of Ulsan Haesong Hall, Ulsan, Republic of Korea, October 28-30, 2024. → (3*7)/(7+1+1+1+1) = 1.9091 

[Poster] W. S. Yun*, "Electric polarization effect on magnetocrystalline anisotropy of Fe3XTe2/In2Se3 heterostructures (X = Ge and Ga)", The 25th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-25), Univ. of Ulsan Haesong Hall, Ulsan, Republic of Korea, October 28-30, 2024. → (3*7)/(7) = 3.0000 

• 2023   (Total Score = 14.3000)

[SCI-1]  "Strain-induced dark exciton generation in rippled monolayer MoS2" → Q1

S. Y. Lee†, W. S. Yun†, and J. D. Lee*  → 3 persons (Role: First-Author)

Physical Chemistry Chemical Physics 25, 9894−9900 (2023). (†equal contribution) [IF: 3.3]  → (25*4)/(4+4+3) = 9.0909

 [Poster] W. S. Yun, S. W. Han, H.-J. Lee, J.-S. Kim, and M.-J. Lee, "Thermoelectric performance of TaRuPn (Pn = As, Sb, Bi) half-Heusler compounds" (PO-MON-EN23-297), The 13th International Conference on Advanced Materials and Devices (ICAMD 2023), Ramada Plaza Jeju Hotel, Jeju Island, Republic of Korea, December 04-08, 2023.  → (3*7)/(7+4*1) = 1.9091

 [Poster] W. S. Yun,"Novel semiconductors single-layer ZrHfX4 (X = S, Se) as promising two-dimensional thermoelectric materials" (PO-TUE-2D23-671), The 13th International Conference on Advanced Materials and Devices (ICAMD 2023), Ramada Plaza Jeju Hotel, Jeju Island, Republic of Korea, December 04-08, 2023.  → (3*4)/(4) = 3.0000

 [Poster]  Y. Kim, et al., "Exploring memristor-based non-volatile memory devices and oxidation-enhanced resistive memory performance" (PO-THU-ON23-23-363), The 13th International Conference on Advanced Materials and Devices (ICAMD 2023), Ramada Plaza Jeju Hotel, Jeju Island, Republic of Korea, December 04-08, 2023.  → (3*1)/(4+3*1+3) = 0.3000

• 2022   (Total Score = 19.2337)

[SCI-4]  "Thermoelectric performance of novel single-layer ZrTeSe4" → Q1

W. S. Yun, H.-J. Lee, J.-S. Kim, M.-J. Lee*, and S. W. Han*  → 5 persons (Role: First-Author)

Physical Chemistry Chemical Physics 24, 28250−28256 (2022). [IF: 3.3] → (25*4)/ (4+1+1+3+3) = 8.3333

[SCI-3]  "Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure" → Q1

H. Y. Noh, W.-G. Lee, G. R. Haripriya, J.-H. Cha, J.-S. Kim, W. S. Yun, M.-J. Lee, and H.-J. Lee*  → 8 persons (Role: Co-Author)

Scientific Reports 12, 19816 (2022). [IF: 4.6]  → (25*1)/(4+6*1+3) = 1.9231

[SCI-2]  "Phase transition of a MoS2 monolayer through top layer desulfurization by He+ ion irradiation" → Q2

S. W. Han*, W. S. Yun, M. Kang, S. Lee, and J. Park  → 5 persons (Role: Co-Author)

Journal of Applied Physics 131, 224301 (2022). [IF: 3.2]  → (20*1)/(7+4*1) = 1.8182

[SCI-1]  "Multilayer WSe2/MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering" → Q1 

M.-H. Jeong, H.-S. Ra, S.-H. Lee, D.-H. Kwak, J. Ahn, W. S. Yun, J. D. Lee, W.-S. Chae, D. K. Hwang*, and J.-S. Lee*  → 10 persons (Role: Co-Author)

Advanced Materials 34, 2108412 (2022). [IF: 29.4]  → (25*1)/(4+4+6*1+3+3) = 1.2500

[Poster] W. S. Yun, H.-J. Lee, J.-S. Kim, M.-J. Lee, and S. W. Han, "Thermoelectric Properties of a Novel Semiconductors Single-layer TlPt2S3" (LDS_P1_1719), The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2022), Ramada Plaza Jeju Hotel, Jeju, Republic of Korea, July 17-21, 2022. → (3*7)/(7+1+1+1+1) = 1.9091

[Invited] W. S. Yun, "Electronic and Magnetic Properties of 2D Layered Materials", Workshop of Theory and Computational Magnetics Division (Prof. Hong's Retirement Anniversary), Intl. Bldg. 43, #101, University of Ulsan, Republic of Korea, June 30, 2022. → (4*4)/(4) = 4.0000

• 2021   (Total Score = 13.5010)

[SCI-3]  "Hole doping effect of MoS2 via electron capture of He+ ion irradiation" → Q1

S. W. Han†,*, W. S. Yun†, H. Kim, Y. Kim, D.-H. Kim, C. W. Ahn, and S. Ryu  → 7 persons (Role: First-Author)

Scientific Reports 11, 23590 (2021). (†equal contribution) [IF: 4.6]  → (25*4)/(7+4+5*1) = 6.2500

[SCI-2]  "Interface Defect Engineering of a Large-Scale CVD-Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate" → Q2

S. W. Han†,*, W. S. Yun†, W. J. Woo, H. Kim, J. Park, Y. H. Hwang, T. K. Nguyen, C. T. Le, Y. S. Kim, M. Kang, C. W. Ahn, and S. C. Hong*   → 12 persons (Role: First-Author)

Advanced Materials Interfaces 8, 2100428 (2021). (†equal contribution) [IF: 5.4]  → (20*4)/(7+4+9*1+3) = 3.4783

[SCI-1]  "Parasitic Current Induced by Gate Overlap in Thin-Film Transistor" → Q1

H.-J. Lee*, K. Abe, J.-S. Kim, W. S. Yun, and M.-J. Lee  → 5 persons (Role: Co-Author)

Materials 14, 2299 (2021). [IF: 3.4] → (25*1)/(7+1+1+1+1) = 2.2727

[PATENT]  "Resistance memory devices and methods of manufacturing the same"

Hyeon-Jun Lee*, June-Seo Kim, and Won Seok Yun  → 3 persons (Role: Co-Author)

Korean Patent Application No.: 10-2021-0047708 (Date: 2021.04.13). → 5*0.3 = 1.5000

• 2020  (Total Score = 8.2360)

[SCI-3]  "Measurement of Exciton and Trion Energies in Multi-Stacked hBN/WS2 Coupled Quantum Wells for Resonant Tunneling Diodes" → Q1

M.-J. Lee*, D. H. Seo, S. M. Kwon, D. Kim, Y. Kim, W. S. Yun, J.-H. Cha, H.-K. Song, S. Lee, M. Jung, H.-J. Lee, J.-S. Kim, J.-S. Heo, S. Seo, and S. K. Park*  → 15 persons (Role: Co-Author)

ACS Nano 14, 16114−16121 (2020). [IF: 17.1] → (25*1)/(7+4+12*1+3) = 0.9615

[SCI-2]  "Breaking the absorption limit of Si towards SWIR wavelength range via strain engineering" → Q1

A. K. Katiyar, K. Y. Thai, W. S. Yun, J. D. Lee, and J.-H. Ahn*  → 5 persons (Role: Co-Author)

Science Advances 6, eabb0576 (2020). [IF: 13.6] → (25*1)/(4+1+1+1+3) = 2.5000

[SCI-1]  "Graphene-mediated coherent light lasing from CsPbI3 perovskite nanorods"  → Q1

J.-H. Kim, Q. V. Le, T. P. Nguyen, T. H. Lee, H. W. Jang, W. S. Yun, S. M. Jeong, J. D. Lee, S. Y. Kim*, H. Kim*  → 10 persons (Role: Co-Author)

Nano Energy 70, 104497 (2020). [IF: 17.6] → (25*1)/(4+4+6*1+3+3) = 1.2500

 [Project] M. J. Lee, "나노전자 소자기반의 뉴로모픽 컴퓨팅 소자개발",  → 0.4458

 [Project] M. J. Lee, "나노전자 소자기반의 뉴로모픽 컴퓨팅 소자개발",  → 3.0787

• 2019  (Total Score = 25.6667)

[SCI-2]  "Single-layer CdPSe3: A promising thermoelectric material persisting in high temperatures"  → Q1 

W. S. Yun and J. D. Lee* → 2 persons (Role: First-Author)

Applied Physics Letters 115, 193105 (2019). [IF: 4.0]  → (25*4)/(4+3) = 14.2857

[SCI-1] "Thermally driven homonuclear-stacking phase of MoS2 through desulfurization"  → Q1

Y. H. Hwang†, W. S. Yun†, G.-B. Cha, S. C. Hong*, and S. W. Han* → 5 persons (Role: First-Author)

Nanoscale 11, 11138−11144 (2019). (†equal contribution) [IF: 6.7] → (25*4)/(4+4+1+3+3) = 6.6667

 [Poster] W. S. Yun, "Two-dimensional CdPSe3 semiconductor: A promising high-temperature thermoelectric material", 30th International Conference on Defects in Semiconductors (ICDS-30), The Motif, Seattle, Washington, USA, July 21-06, 2019.  → (3*4)/(4) = 3.0000

 [Oral] W. S. Yun and J. D. Lee, "Two-dimensional CdPSe3 semiconductor as a potential candidate for high-performance thermoelectric material", The Korean Physical Society, Spring Meeting, Daejeon Convention Center (DCC), Daejeon, Republic of Korea, April 24-26, 2019.  → (3*4)/(4+3) = 1.7143