Japan Silicon Carbide (SiC) Substrate Market was valued at USD 0.6 Billion in 2022 and is projected to reach USD 1.5 Billion by 2030, growing at a CAGR of 13.5% from 2024 to 2030.
Japan's Silicon Carbide (SiC) substrate market is experiencing rapid growth, driven by the increasing demand for high-performance electronic devices across various industries. SiC substrates are essential components in power electronics, offering superior thermal conductivity, high breakdown electric field strength, and excellent thermal stability. These properties make them ideal for applications in electric vehicles (EVs), renewable energy systems, and industrial machinery.
2-Inch and 3-Inch Wafers: Primarily used in research and development settings, these smaller wafers are suitable for prototyping and small-scale production.
4-Inch Wafers: Commonly utilized in smaller, high-frequency devices, these wafers cater to specific industry needs.
6-Inch Wafers: Widely adopted in mass production, these wafers offer a balance between cost and performance, making them suitable for various industrial applications.
8-Inch Wafers: Emerging as the new standard, these larger wafers enable higher production efficiency and cost reduction, addressing the growing demand for SiC-based components.
The adoption of SiC substrates in Japan is largely influenced by the specific requirements of various industries:
Automotive Industry: With the rise of electric vehicles, there is a significant demand for SiC-based power electronics that offer improved efficiency and reduced energy loss. Japanese manufacturers are investing heavily in SiC technology to enhance EV performance.
Renewable Energy Sector: SiC substrates are crucial in the development of efficient power converters for solar and wind energy systems, contributing to Japan's commitment to sustainable energy solutions.
Industrial Machinery: The need for robust and efficient power modules in industrial applications has led to the integration of SiC substrates, enhancing the performance and reliability of machinery.
Several Japanese companies are making significant strides in the SiC substrate market:
Resonac Corporation and Soitec Collaboration: In September 2024, Resonac Corporation (formerly Showa Denko K.K.) and Soitec announced a joint development agreement to produce 200mm (8-inch) SmartSiC™ silicon carbide wafers. This collaboration aims to accelerate the adoption of high-performance SiC in next-generation electric vehicles, enhancing manufacturing efficiency and reducing costs.
Sumitomo Metal Mining's Expansion: Sumitomo Metal Mining Co., Ltd. has initiated the establishment of a mass production line for 8-inch direct bonded SiC substrates. The company plans to achieve a monthly production capacity exceeding 10,000 substrates (6-inch equivalent) in the latter half of fiscal year 2025, aiming to meet the increasing demand for SiC substrates in various industries.
Mitsubishi Electric's Advancements: Mitsubishi Electric is scaling up production of SiC power semiconductors by constructing new wafer fabrication facilities. The company plans to utilize 200mm wafer technology to enhance production efficiency and meet the growing demand for SiC-based components in high-voltage industrial applications and home appliances.
These developments underscore Japan's commitment to advancing SiC technology and meeting the evolving requirements of industries reliant on high-performance electronic devices. The transition to larger wafer sizes, such as the 8-inch substrates, is expected to drive down costs and facilitate the widespread adoption of SiC-based solutions, solidifying Japan's position as a leader in the global SiC substrate market.
In my personal experience, attending industry conferences and engaging with professionals in the field has highlighted the critical role of SiC substrates in modern electronics. The shift towards larger wafer sizes not only improves production efficiency but also aligns with the industry's goal of achieving higher performance and sustainability. As industries continue to prioritize energy efficiency and miniaturization, the demand for advanced SiC substrates is poised to grow exponentially.
Furthermore, the integration of SiC technology extends beyond traditional applications. For instance, the development of 100 Gigabit Fiber Optic Transceiver modules relies on the superior properties of SiC substrates to achieve high-speed data transmission with minimal loss. This exemplifies the versatility and indispensability of SiC substrates in advancing modern communication technologies.
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II-VI Advanced Materials
ROHM
Norstel
SICC Materials
Showa Denko
TankeBlue Semiconductor
SK Siltron
Synlight
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By the year 2030, the scale for growth in the market research industry is reported to be above 120 billion which further indicates its projected compound annual growth rate (CAGR), of more than 5.8% from 2023 to 2030. There have also been disruptions in the industry due to advancements in machine learning, artificial intelligence and data analytics There is predictive analysis and real time information about consumers which such technologies provide to the companies enabling them to make better and precise decisions. The Asia-Pacific region is expected to be a key driver of growth, accounting for more than 35% of total revenue growth. In addition, new innovative techniques such as mobile surveys, social listening, and online panels, which emphasize speed, precision, and customization, are also transforming this particular sector.
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Growing demand for below applications around the world has had a direct impact on the growth of the Japan Silicon Carbide (SiC) Substrate Market
Single Crystal Silicon Carbide (4H-SiC, 6H-SiC)
Polycrystalline Silicon Carbide
Amorphous Silicon Carbide
Trench Type
Planar Type
Power Electronics
Radio Frequency Devices
LEDs
Photovoltaic Systems
Electric Vehicles
Automotive
Energy & Power
Electronics & Semiconductor
Telecommunications
Industrial
2 Inch
3 Inch
4 Inch
6 Inch
Asia-Pacific (China, Japan, Korea, India, Australia, Indonesia, Thailand, Philippines, Malaysia and Vietnam)
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1. Introduction of the Japan Silicon Carbide (SiC) Substrate Market
Overview of the Market
Scope of Report
Assumptions
2. Executive Summary
3. Research Methodology of Verified Market Reports
Data Mining
Validation
Primary Interviews
List of Data Sources
4. Japan Silicon Carbide (SiC) Substrate Market Outlook
Overview
Market Dynamics
Drivers
Restraints
Opportunities
Porters Five Force Model
Value Chain Analysis
5. Japan Silicon Carbide (SiC) Substrate Market, By Type
6. Japan Silicon Carbide (SiC) Substrate Market, By Application
7. Japan Silicon Carbide (SiC) Substrate Market, By Geography
Asia-Pacific
China
Japan
Korea
India
Australia
Indonesia
Thailand
Philippines
Malaysia and Vietnam
8. Japan Silicon Carbide (SiC) Substrate Market Competitive Landscape
Overview
Company Market Ranking
Key Development Strategies
9. Company Profiles
10. Appendix
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