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Nanoscale Devices Based on Non-Conventional Materials
With the eventual fundamental limits of scaling silicon MOSFET technology according to Moore's law in the near future, there is a growing need for alternative materials in conventional MOSFETs or even new device concepts based on innovative operating schemes. My research focuses on developing advanced, high-density electronic devices for efficient and ultrafast electronic units based on 2D transition metal dichalcogenides in a low-dimensional regime.
Areas of Interest:
• Fabrication and characterization of Semiconductor Devices.
• Thin Film Physics and Technologies
Areas of Specialization:
• Flexible Electronics, Graphene and other 2D material for flexible & stretchable electronics.
• VLSI and Nanotechnology and Microelectronics, Semiconductor Device Physics.
Movie S1.aviMovie S2.aviResearch Grants
“Realization of 2D material-based 3D integrated CMOS using metal 2D material PtSe2 as contacts and wiring”
Assignment number: 2021R1I1A1A01044213.
Research institute: Yonsei University
Business year: 2021 Period 2021.06.01 ~ 2024.05.31
Research funds for the current year (KRW): 52,500,000/yr
Research director: DAS TANMOY
Assignment number: 2018R1D1A1B07041867
Research Institute: Ulsan Institute of Science and Technology
Business year: 2018 Period: 2018.06.01 ~ 2021.05.31
Research funds for the current year (KRW): 37,500,000/yr
Research Director: DAS TANMOY
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