P U B L I C A T I O N S

List of Research Publications

Patent

1. "Large area transfer method of transition metal dichalcogenides," Korean Patent, Patent number: KR102024463B1, Publication Date: 23.9. 2019.
   
   

2. “Method for manufacturing transistor comprising transition metal chalcogenides channel using dielectric with high dielectric constant and transistor manufactured by the same,” Korean Patent, Patent number: KR101900045B1, Publication Date: 18.9.2018

Book Chapter

1. H. Jang, T Das, W. Lee, J. -H. Ahn “Silicon nanomembranes: fundamental Science and applications” Wiley-VCH (2015)

2. B. K. Sharma, T. Das, and J-H Ahn, “Graphene for Flexible Electronics”, a chapter in “Flexible Carbon-based Electronics” ISBN: 978-3-527-34191-7 February 2019, Wiley-VCH 

International Journal

1.  H Algadi, T Das, J Ren, H Li  “High-performance and stable hybrid photodetector based on a monolayer molybdenum disulfide (MoS2)/nitrogen doped graphene quantum dots (NH2 GQDs)/all-inorganic (CsPbBr3) perovskite nanocrystals triple junction”, Advanced Composites and Hybrid Materials,2023

2. JE Seo, E Park, T Das, JY Kwak, J Chang*, “Demonstration of PdSe2 CMOS Using Same Metal Contact in PdSe2 n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition”, Advanced Electronic Materials, 2200485, (2022)

3. J E Seo, T Das, E Park, D Seo, JY Kwak, J Chang*,“Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistors” ACS Applied Materials & Interfaces 13 (36), 43480-43488,(2021)

4. D. Seo, J. E. Seo, T. Das, J. Y. Kwak*, J. Chang*, “Gate-Controlled Rectifying Direction in PdSe2 Lateral Heterojunction Diode”, Advanced Electronic Materials, 5, 2100005, (2021)

5. T. Das, E. Yang, J. E. Seo, J. H. Kim, E. Park, M. Kim, D. Seo, J. Y. Kwak*, J. Chang*, “Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition”, ACS Applied Materials & Interfaces, 13, 1861-1871 (2021).

6. T. Das, D. Seo, J. E. Seo, J. Chang*, “Tunable Current Transport in PdSe2 Via Layer-by-Layer Thickness Modulation by Mild Plasma”, Advanced Electronic Materials, 6, 2000008 (2020).

7. Sachin M. Shinde, Tanmoy Das, Anh Tuan Hoang, Bhupendra K. Sharma, Xiang Chen, Jong‐Hyun Ahn, "Surface-Functionalization-Mediated Direct Transfer of Molybdenum Disulfide for Large-Area Flexible Devices", Adv. Funct. Mater. 2018, 28, 1706231

8. T. Das, B. K. Sharma, A. K. Katiyar and J-H Ahn, “Graphene-Based Flexible and Wearable Electronics”, Journal of Semiconductor, J. Semicond. 39, 011007, 2018.

9. T. Das and J-H Ahn, “Development of electronic devices based on two-dimensional materials”, FlatChem 3,2017, 43–63

10. T. Das et al., “Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide”, Small, DOI: 10.1002/smll.201602101 (2016)

11. X. Chen, Y J Park, T. Das, H. Jang, J-H Ahn, Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene, Nanoscale, 2016, 8, 15181-15188

12.  H. Jang, Y J Park, X. Chen, T. Das, J-H Ahn, "Graphene-Based Flexible and Stretchable Electronics", Adv. Mater. 2016, 28, 4184-4202

13. T. Das, H Jang, J B Lee, H Chu, S D Kim and J-H Ahn "Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures", 2D Materials, 2, 044006 (2015)

14. C. Mukherjee, T. Das, C. Mahata, C. K. Maiti, C. K. Chia, S. Y. Chiam, D. Z. Chi, and G. K. Dalapati, "Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates", ACS Appl Mater Interfaces, Vol.6(5), pp.3263-74 March 2014.

15. E. Miranda, J. Sune, T. Das, C. Mahata, and C. K. Maiti, “Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO2/Al2O3 nanolaminates on GaAs,” Journal of Applied Physics, 112, 064113 (2012)

16. C. Mahata, S. Mallik, T. Das, C. K. Maiti, and   E. Miranda, Atomic layer deposited (TiO2)x(Al2O3)1 -x/In0.53Ga0.47As Gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications, Applied Physics Letter, vol.100, pp.062905, February 2012.

17. T. Das, C. Mahata, S. Mallik, S. Varma, G. Sutradhar, P.K.Bose, and C. K. Maiti, Interface properties of mixed (TiO2)1-x(Y2O3)x and (Ta2O5)1-x(Y2O3)x (0≤x≤1) gate dielectrics on sulfur-passivated GaAs, Journal of The Electrochemical Society, vol.159,no.3, pp.H323-H328, January 2012.

18. E. Miranda, C. Mahata, T. Das, J. Suñe, C, Maiti, "Degradation and Breakdown Characteristics of Al/HfYOx/GaAs Capacitors,” Thin Solid Films, vol. 520, Issue 7, pp. 2956-2959, January 2012.

19. T. Das, C. Mahata, C. K. Maiti, G. K. Dalapati, C. K. Chia, D. Z. Chi, and S. Y. Chiam, H. L. Seng, G. Sutradhar and P. K. Bose, “Sputter-deposited La2O3 on p-GaAs for gate dielectric applications,” Journal of The Electrochemical Society , vol.159, no.2, pp. G15-G22, December 2012

20. S. Mallik, C. Mukherjee, C. Mahata, M.K. Hota, T. Das, G.K. Dalapati, H. GaO, M.K. Kumar, D.Z. Chi, C.K. Sarkar, C.K. Maiti, “Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers,” Thin Solid Films, Article in press, 2012.

21. E. Miranda, C. Mahata, T. Das, C. K. Maiti, An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown, Microelectronics Reliability, vol. 51, pp.1535–153, September 2011.

22. G. K. Dalapati, C. K. Chia, C. Mahata, T. Das, C. K. Maiti, M. K. Kumar, H. GaO, S. Y. Chiam, C. C. Tan, C. T. Chua, Y. B. Cheng, and D. Z. Chi,” Surface Passivation of GaAs Substrates with SiO2 Deposited Using ALD” Electrochemical and Solid-state Letters, vol. 14 (10), pp. G52-G55, 2011.

23. E. Miranda, C. Mahata, T. Das, C. K. Maiti, “Model for leakage current decay in high-field stressed Al/HfYOx/GaAs structures,” Microelectronic Engineering, vol. 88, pp 1295-1297, 2011.

24. C. Mahata, T. Das, S. Mallik, M. K. Hota, and C. K. Maiti, “Chemical Bonding States of Plasma Nitrided High-k/Ge Gate Stack,” Electrochemical and Solid-state Letters, vol. 14 (4), pp. H167-H170, 2011.

25. T. Das, C. Mahata, C. K. Maiti, E. Miranda, G. Sutradhar, and P. K. Bose, “Effects of Ti incorporation on the interface properties and band alignment of HfTaOx thin films on Sulfur passivated GaAs” Applied Physics Letter, Vol. 98, pp. 022901, 2011.

26. C. Mahata, T. Das, S. Mallik, M. K. Hota, S. Varma, and C. K. Maiti, “Flatband Voltage Characteristics of Hf-incorporated Y2O3/strained-Si Gate Stacks with Au, Pt and Ni Metal Gates,” Electrochemical and Solid-state Letters, vol. 14, pp. H80-H83, 2011.

27. T. Das, C. Mahata, G. Sutradhar, P. K. Bose and C. K. Maiti, "Interfacial and electrical properties of GaAs metal-oxide-semiconductor device with TiOxNy High-k Gate Dielectrics" ECS Transactions, Vol. 35 (3), pp 325, 2011.

28. C. Mahata, S. Mallik, T. Das, M. K. Hota, C.K. Maiti, "Interface Structure and Charge Trapping in Hf-incorporated Y2O3 Gate Dielectrics on Germanium" ECS Transactions, vol. 35 (3), pp 835, 2011.

29. T. Das, C. Mahata, G. K. Dalapati, D. Z. Chi, G. Sutradhar, P. K. Bose, C. K. Chia, S. Y. Chiam, J. S. Pan, Z. Zhang, and C. K. Maiti, “Thermal stability of HfOxNy Gate Dielectrics on p-GaAs Substrates,” Semiconductor Science and Technology, vol. 25, pp. 125009, 2010.

Conference Presentations

1. A.K. Ghosh, T. Das, C. Mukherjee,A. S. Bandyopadhyay G.K Dalapati, D.Chi and C. K. Maiti, “Electrical and Charge Trapping Properties of HfO2/Al2O3 Bilayer Gate Dielectrics on In0.53Ga0.47As Substrates,” International Symposium On the Physical and Failure Analysis OF Integrated Circuits(IPFA 2012)

2. E. Miranda, C. Mahata, T. Das, and C.K. Maiti, “Power-Law Logistic Model for the Current-Time Characteristic of Metal Gate/High-K/III-V," Semiconductor Capacitors8th Spanish Conference on Electron Devices, CDE'2011, 8-11 February, 2011, pp. 1-3.

3. T. Das, C. Mahata and C. K. Maiti, G. Sutradhar, P. K. Bose, “Ti-Based High-k Gate Dielectric on GaAs,” International Conference on Communication, Computers and Devices (ICCCD2010), 10-12 December.

4. T. Das, C. Mahata, S. Mallik, M. K. Hota, B. Majhi, G.K Dalapati and C. K. Maiti, “Reliability and Charge Trapping Properties of ZrO2 Gate Dielectric on Si passivated p-GaAs,” 15thInternational Symposium On the Physical And Failure Analysis Of Integrated Circuits (IPFA2009), 6-10 July 2009 pp. 130-133.

5. B. Majhi, C. Mahata, M. K. Bera, T. Das, S. Mallik, M. K. Hota, and C. K. Maiti, “Paramagnetic Defects and Charge Trapping in TaYOx Gate Dielec-trics on Strained-Si,” 15th International Symposium On the Physical And Failure Analysis Of Integrated Circuits (IPFA2009), 6-10 July 2009 pp. 811 - 814. 

6. M. K. Hota, C. Mahata, M.K. Bera, S. Mallik, B. Majhi, T. Das and C. K. Maiti, “Reliability Behavior of TaAlOx Metal-Insulator-Metal Capacitors,” 15th International Symposium On the Physical And Failure Analysis Of Integrated Circuits (IPFA2009), 6-10 July 2009 pp. 803 - 806. 

7. M. K. Hota, C. Mahata, S. Mallik, B. Majhi, T. Das and C. K. Maiti, “Characterization of RF Sputter Deposited HfAlOx Dielectrics for MIM Capacitor Applications,” 2nd Internatinal Workshop on Electron Devices and Semiconductor Technology (IEDST 2009) 1-2 June , 2009, pp. 67-70. 

8. T. Das, C. Mahata, P. S. Das, A. Chakraborty, B. Majhi, M. K. Hota, S. Mallick, C. K. Maiti, “Ti-Based Gate Dielectric on Si-passivated n-GaAs for MOSFET Applications,” National Conference On Advances in Armament Technology (Ncaat-2008), pp. S7-10 (1-5), Nov 20-22, 2008, pp. 125-126.

9. C. Mahata, M. K. Bera, M. K. Hota, T. Das, P. S. Das, S. Mallik, B. Majhi, I. Chatterjee, P. K. Bose and C. K. Maiti, “High Performance TaAlOx-based MIM Capacitors for RF and Mixed Signal Applications,” International Workshop on Dielectric Thin Films For Future ULSI Devices (IWDTF), Tokyo, Japan, November 5-7, pp. 2008, pp. 119-120.

10. P. S. Das, C. Mahata, M. K. Bera, S. Mallik, T. Das, B. Majhi, I. Chatterjee, M. K. Hota, A.Chakraborty, P. K. Bose and C. K. Maiti, “Charge Storage Characteristics of High-k TaYOx based Trapping Layer for High Density Non-Volatile Flash Memory Application,” InternationalWorkshop on Dielectric Thin Films For Future ULSI Devices (IWDTF), Tokyo, Japan, November 5-7, 2008, pp. 121-122.

11. T. Das, C. Mahata, M. K. Bera, P. S. Das, A. Chakraborty, I. Chatterjee, B. Majhi, S. Mallik, M.K. Hota and C. K. Maiti, “Reliability of TiO2 High-k Gate Dielectrics on n-GaAs with Ge Interfacial Passivation Layer,” International Workshop on Dielectric Thin Films For Future ULSI Devices (IWDTF), Tokyo, Japan, November 5-7, 2008,pp. 125-126.

12. M. K. Bera, G. K. Dalapati, C. Mahata, P. Chakraborty, T. Das, P. S. Das, D. Chi and C. K. Maiti, “Reliability Assessment of High-k Gate Dielectrics on Si-passivated p-GaAs under Dynamic and AC Stress,” ECS Honolulu.

13. C. Mahata, S. Mallik, M. K. Hota, T. Das, and C. K. Maiti, “Plasma Nitridation of TiO2/Ge Gate Stacks,” International Workshop on Physics of Semiconductor Devices (IWPSD), India, pp. 99-100.

14. T. Das, C. Mahata, G. K Dalapati, G. Sutradhar, P. K. Bose and C. K. Maiti, “Effects of Post Deposition Annealing on HfOxNy Gate Dielectrics on p-GaAs,” International Workshop on Physics of Semiconductor Devices (IWPSD), India, pp. 219-220.

15. T. Das, C. Mahata, G. K Dalapati, G. Sutradhar, P.K. Bose and C. K. Maiti, Electrical Characteristics of Hf-based GaAs MIS Capacitors with thin HfOxNy interlayer,” International Conference On Computers and Devices for Communication (CODEC) Kolkata, India, 14-16 Dec. 2009Page(s):1-4.

16. T. Das, C. Mahata, G. K. Dalapati, G. Sutradhar, P. K. Bose and C. K. Maiti, Reliability Perspective and Breakdown Study of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Si layer,” 17th International Symposium On the Physical And Failure Analysis Of Integrated Circuits (IPFA) 2010, Singapore, pp.1-4.