Dielectric Materials

Dielectric Materials

Our research focuses on high-k dielectric materials and advanced gate stacks for next-generation semiconductor devices. We investigate the electrical and interfacial properties of high-k materials such as HfO₂, ZrO₂, Al₂O₃, and La₂O₃, with particular emphasis on threshold-voltage (VTH) flavor control, equivalent oxide thickness (EOT) scaling, leakage current, and dielectric reliability. Through material engineering and electrical characterization, we aim to understand and optimize the relationship between gate-stack materials, device performance, and long-term reliability.