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Thin-film Deposition Systems
Thin-film Deposition Systems
UHV deposition system #1
UHV deposition system #1
AJA deposition system
Metal, oxide and nitride deposition
Base vacuum in the low 10-9 Torr
Combinatorial growth of compounds with continuous concentration change
Combinatorial growth of superlattices with continuous thickness change
Accepts 1.5" and 2" targets with wafers up to 4"
Loadlock wafer transfer system
Reactive sputtering with Ar+O2 or Ar +N2
UHV deposition system #2
UHV deposition system #2
AJA deposition system
Metal and semiconductor deposition in sputtering down configuration
Accepts 2" targets
Accepts wafer up to 4"
Loadlock wafer transfer system
RF and DC biasing during deposition
Reactive sputtering with Ar+O2 or Ar+N2
UHV deposition system #3
UHV deposition system #3
Two seperated deposition chambers: one for high vapor pressure compounds and one for oxides
Each chamber has three sources, capable co-deposition
Magnetrons equipped with interchangeable magnet arrays for 1.5", 1.75" and 2" targets
Substrate temperature: 300K -1000K
Micro/Nano Fabrication
Micro/Nano Fabrication
In-house clean rooms
In-house clean rooms
Class 1000 softwall cleanrooms
For photolithography, nanofabrication and wafer preparation
Photolithography Mask Aligner
Photolithography Mask Aligner
True Split field view with two digital microscopes
IR back side alignment
Accept 4" masks and wafer with size of 1"-3"
Mask Thickness 0.06 -to 0.25"
UV lamps uniformity <± 4% (6" diameter)
Pressure Contact Resolution <2.0um
Vacuum Contact Resolution (Hard/Soft Contact) <1.0um
Gap Adjustment Resolution 1um
Alignment Accuracy (Topside Alignment) ± 1um
Ion-beam Etching system
Ion-beam Etching system
Gridded DC Ion source with UHV flange
Used for etching and substrate cleaning
Stable beam intensity at 0.5 mA/cm2 - 10 mA/cm2
Operate with rotating substrates
Accepts wafer up to 3 inches
Characterization Systems
Characterization Systems
Microdiffraction XRD
Microdiffraction XRD
Microfocus XRD tube requires no cooling water
X-ray spot as small as 20um, ideal for patterned structures, or bonded devices on chip carriers
Large beam configuration for power diffraction
Aligned X-ray, laser and CCD camera for point-and-shoot measurement
Four-circle goniometer
Pole figures
Elemental mapping
Accepts samples as small as 0.1mm or wafer as large as 4 inches
Shared with Kong Lab
PPMS
PPMS
DYNACOOL 9T PPMS
50mK to 400K
High Resolution Horizontal Sample Rotator
Vibrating Sample Magnetometer
Heat Capacity Measurement System
Dilution refrigerator reaching as low as 50mK, for transport and thermal measurement
Shared with Kong Lab
High Sensitivity Vibrating Sample Magnetometer (VSM)
High Sensitivity Vibrating Sample Magnetometer (VSM)
Mirosense EZ9
Ideal for ultra-thin magnetic films and nanostructures: 0.75 x 10-7 emu noise
5 x 10-7 emu noise at gap large enough to fit the temperature chamber
Fields to > 2.5 tesla
Lowest field noise: less than 5 mOe RMS
Automatic Rotation head
Fast and Easy to use with oven/cryostat always installed on the measurement system and ready for use
Air Cooled Magnet Power Supply
RT probe station #1
RT probe station #1
DC and RF characterizations
With both in-plane (360-degree rotatable) and out-of-plane magnetic field
Max. in-plane field 4000 Oe and out-of-plane field 2000 Oe
High resolution positioners (~ 1um )
Vacuum sample holder
Motorized stage (XYZ-T) for automatic testing
Keithley 6220 & 2182A meters for fast low noise dI/dV measurement
Picosecond Pulse sources from 100ps to 10ns
RT probe station #2
RT probe station #2
Customized Signatone S1007
High resolution positioners for 1um features
Equipped with both perpendicular and in-plane magnetic field
Equipped with Standford S830 lockin amplifier and Keithley 2400 sources meter
Mostly used for training and REU/RET programs
RT probe station #3
RT probe station #3
DC and RF characterizations
High resolution positioners for 1um features
Perpendicular and DC fields available
Vacuum sample holders
Keithley 6220 & 2182A meters for fast low noise dI/dV measurement
Keithley 2400 for gate voltage application
Wafer size up to 4 inch can be probed
RT high field station
RT high field station
Produce field > 2.5 Tesla with water cooled magnet.
In-plane and out-of-plane magnetic fields
Angular dependence measurement
LT transport system
LT transport system
Cryogen-free closed cycle refrigerator
10K-300K continuous operation
Lock-in amplifier
Magnetic field up to 1T
Mostly for DC measurement
Other Equipment
Other Equipment
Vector Network Analyzer
Vector Network Analyzer
130MHz-20GHz
Option 001 ( 1Hz resolution)
Option 010 ( time domain capability)
Pulse Generator
Pulse Generator
Amplitude 7.5 V
Polarity Positive or negative
Risetime (20% - 80%) (10% - 90%) 40 ps typical, 50 ps max.
Falltime (80% - 20%) 80 ps typical, 100 ps max
Duration (50%) 100 ps (nominal) to 10 ns adjustable. Baseline Precursor < 1 %
Glove box
Glove box
Controlled atmosphere < 1 ppm oxygen & moisture
Flow Rate: 0 to 40 CFM (Nitrogen, Helium or Argon)
Purification Capacity: Per purifier, 20 liters of O2 and 2.3 kg of H2O absorption capacity (per mfg. specs).
Spin coater
Spin coater
Programmable
Spin Range: 0 to 6000 rpm
Acceleration: 0 to 30,000 rpm/second
Accept wafers with size of 0.25" - 3"
Wire-bonder
Wire-bonder
West Bond 747677B
Deep Access tool head
Wedge bonder but can be converted into a ball bonder
Olympus SZ30 microscope
Vacuum annealing system
Vacuum annealing system
Base vacuum 10-7 Torr
Max temperature 850C
Accepts two wafers at a time
"Hot wall" design to eliminate temperature over-shooting
Shared Facilities
Shared Facilities
In addition to the in-house facilities listed above, we also have access to the following shared instruments in the university micro fabrication and imaging center:
In addition to the in-house facilities listed above, we also have access to the following shared instruments in the university micro fabrication and imaging center:
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