notes

App note: How Silicon Carbide power schottky diode properties provide enhanced application capabilities

Great read from Bourns’ white paper about the new SiC Schottky diode which revolutionize power handling capability and other benefits compared to Silicon diodes. Link here (PDF)

For diode applications, the ideal component would be one with no voltage drop during forward conduction and no leakage current when reverse biased. It would change instantly from conducting forward current to blocking reverse voltage. Compared to junction silicon diodes, Schottky diodes provide reduced voltage drop with decreased reverse bias recovery current.
This paper discusses the properties of Schottky diodes constructed using a silicon carbide (SiC) n-epitaxial semiconductor material layer attached to a metal contact area as opposed to diodes constructed using two differently doped silicon semiconductor materials.