Jia, Ridong, Thomas Caiwei Tan, Sobhan Subhra Mishra, Wenhao Wang, Yi Ji Tan, and Ranjan Singh. "On‐Chip Active Non‐Reciprocal Topological Photonics." Advanced Materials (2025): 2501711.
Jia, Ridong, Thomas Caiwei Tan, Sobhan Subhra Mishra, Wenhao Wang, Yi Ji Tan, and Ranjan Singh. "On‐Chip Active Non‐Reciprocal Topological Photonics." Advanced Materials (2025): 2501711.
Chip-scale non-reciprocity is essential for advancing integrated photonics, particularly in realizing photonic circulators and isolators for data communication, signal modulation, and quantum computing. However, achieving a non-reciprocal silicon chip with a small footprint, high isolation ratio, low loss, and active control remains a challenge. Here, a non-reciprocal topological silicon chip based on magneto-optical Indium Antimonide (InSb) integrated valley Hall system is reported. The valley-conserved non-reciprocal modes, realized by breaking both time-reversal and spatial-inversion symmetries, enable ultra-compact and efficient non-reciprocal photonic devices that outperform conventional chips. A maximum isolation ratio of 64.3 dB and a low chip loss of 2.6 dB is experimentally achieved by fine-tuning the non-reciprocal critical coupling points of a topological cavity with a small footprint of 6.4 × 2.5λ2. An all-optical method is also applied to actively modulate the isolation ratio from 0 to 48 dB. The development of a non-reciprocal topological silicon chip marks a pivotal advancement in communication systems, LiDAR, terahertz technologies, quantum computing, and cryptography.
Sobhan Subhra Mishra, Thomas CaiWei Tan, Manoj Gupta, Faxian Xiu, and Ranjan Singh. "Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2." arXiv preprint arXiv:2501.16498 (2025) (Under Review, Nature Materials).
The ability to optically engineer the Dirac band and electrically control the Fermi level in two-dimensional (2D) Dirac systems, such as graphene, has significantly advanced quantum technologies. However, similar tunability has remained elusive in three-dimensional Dirac systems. In this work, we demonstrate both optical and electrical tunability of the band structure in the 3D Dirac semimetal Cd3As2. Photoexcitation with circularly polarized light breaks time-reversal symmetry, lifting the degeneracy at Dirac points to transform the material into a Floquet Weyl semimetal with chiral Weyl nodes. This transition induces nonzero Berry curvature, giving rise to helicity-dependent transverse anomalous photocurrents, detectable through terahertz emission at normal incidence. Furthermore, applying an external electric field displaces the Fermi level away from the Dirac point, enlarging the Dirac cone projection leading to a reduced density of states of Fermi arcs. As a result, we achieve precise electrical control over Floquet band engineering, resulting in a large modulation of THz emission. Moreover, at oblique incidence, the circular photon-drag effect induces helicity-dependent longitudinal photocurrents. Simultaneous generation and manipulation of both longitudinal and transverse photocurrents enable precise control of the helicity of emitted THz pulses. These results pave the way for electric field-controlled Floquet Weyl THz sources, offering significant potential for applications in quantum computing and low-power electronics.
Zhang, Baolong, Ruihuan Duan, Sobhan Subhra Mishra, Sambhu Jana, Jonghyeon Kim, Thomas Tan Caiwei, Yi Ji Tan et al. "Electric-field Control of Giant Ferronics." arXiv preprint arXiv:2509.06057 (2025). (Under Review, Nature Materials)
Ferrons are quantum excitations of electric polarization in ferroelectrics and electric analogues of magnons but have lacked direct experimental verification at room temperature. We harness the coupling of soft phonons and ferroelectric order in layered NbOX2 (X = I, Br, Cl) to generate, detect, and control giant ferrons, creating a new class of ultralow-power, chip-scale terahertz (THz) sources. Multiple ferron modes produce intense, narrowband THz emission with quality factors up to 228 and radiation efficiencies up to five orders of magnitude greater than state of the art semiconductor emitters. Resonant excitation of a high-Q ferron mode achieves efficiencies two orders of magnitude higher than intense lithium niobate THz sources. We further demonstrate direct, non-volatile electric-field control of ferron oscillations. These findings provide evidence for multiple ferrons and establish Ferronics as a foundational platform for light- and field-driven control of quantum order, with broad impact on ultrafast electronics, photonics, quantum technologies, and next-generation wireless communication.
Baydin, Andrey, Manukumara Manjappa, Sobhan Subhra Mishra, Hongjing Xu, Jacques Doumani, Fuyang Tay, Dasom Kim et al. "Terahertz Cavity Phonon Polaritons in Lead Telluride in the Deep-Strong Coupling Regime." arXiv preprint arXiv:2501.10856 (2025).
Lead telluride is an important thermoelectric material due to its large Seebeck coefficient combined with its unusually low thermal conductivity that is related to the strong anharmonicity of phonons in this material. Here, we have studied the resonant and nonperturbative coupling of transverse optical phonons in lead telluride with cavity photons inside small-mode-volume metallic metasurface cavities that have photonic modes with terahertz frequencies. We observed a giant vacuum Rabi splitting on the order of the bare phonon and cavity frequencies. Through terahertz time-domain spectroscopy experiments, we systematically studied the vacuum Rabi splitting as a function of sample thickness, temperature, and cavity length. Under the strongest light-matter coupling conditions, the strength of coupling exceeded the bare phonon and cavity frequencies, putting the system into the deep-strong coupling regime. These results demonstrate that this uniquely tunable platform is promising for realizing and understanding predicted cavity-vacuum-induced ferroelectric instabilities and exploring applications of light-matter coupling in the ultrastrong and deep-strong coupling regimes in quantum technology.