Publications
Journal publications
Y. M. Song et al. and K. Park (In progress).
J. Min, G. C. Park, and K. Park (In progress).
K. Park, J. -W. Min, Boon S. Ooi, and C. Kang et al. (In progress).
K. Park, J. -W. Min, Boon S. Ooi, and C. Kang et al. (In progress).
D. Kim (undergrad student), J. C. Hwang, C. Kang, and K. Park et al. (In progress).
2024
K. J. Lee, Y. J. Kim, J. -H. Min, C. H. Kang, R. C. Subedi, H. Zhang, L. Al-Maghrabi, K. Park, D. Ahn, Y. Pak, T. -K. Ng, Y. M. Song, J. Min*, O. M. Bakr, B. S. Ooi, "Characteristics of MAPbI3 Stacked on the GaN Nanowires-on-Glass", Adv. Electron. Mater. (Accepted).
K. Park, and K. Alberi*, "A strategy to eliminate selenium oxide islands formed on the ZnSe/GaAs epilayer", Mater. Sci. Semicond. Process. 174 108176 (2024).
K. Park, G. C. Park, J. Hwang, J. -W. Min, Y. -I. Kim, B. S. Ooi, C. Kang, S. -Y. Yim*, and J. Kim*, "Direct growth of highly lattice mismatched InP on GaAs substrate of various orientation with superlattice-induced lateral quasi-quantum-wire buffer", Mater. Sci. Semicond. Process. 172 108060 (2024).
D. Kim, and K. Park*, "A strategy on the growth of large area polycrystalline Si virtual sub-strate using Al-induced crystallization", J. Korean Inst. Electr. Electron. Mater. Eng. 37(1) 26-35 (2024).
J. Hwang, J. Min, M. -S. Park, and K. Park*, "Optical signature of the formation of vertical HfS2 nanosheets grown on sapphire substrate", Curr. Appl. Phys. 57 8-12 (2024).
G. C. Park* , and K. Park* , "Quasi-bound states in the continuum in asymmetric hetero-bilayer metasurfaces", Opt. Laser Technol. 170 110191(2024). Top 17.5% (Q1) in JCR (Optics).
2023
K. Park†, J. -W. Min†, S. Lopatin, B. Davaasuren, T. -Y. Park, Boon S. Ooi, H. Kim, S. -Y. Yim, G. C. Park, and C. Kang*, "Vertical profiling of ultrafast carrier dynamics in partially strain relaxed and strained InGaN grown on GaN/sapphire template of different In composition", Appl. Surf. Sci. 608 155020 (2023). † Equally contributed to this work. TOP 2.4% (Q1) in JCR (Materials Science, Coatings & Films).
2022
My lovely daughter was born!
2021
G. C. Park† , and K. Park†, "Critically coupled Fabry-Perot cavity with perfect signal contrast for refractive index sensing", Sci. Rep. 11 19575 (2021). †Equally contributed to this work.
K. Park†, J. -W. Min†, G. C. Park, S. Lopatin, B. S. Ooi, and K. Alberi*, "The criteria in above-bandgap photo-irradiation in molecular beam epitaxy growth of heterostructure of dissimilar growth temperature", Appl. Sufc. Sci. 569 151067(2021). †Equally contributed to this work. TOP 2.4% (Q1) in JCR (Materials Science, Coatings & Films).
Fayza K. A., S. Ravindran*, K. Park, K. Alameh, and Y. T. Lee, "Realization and Optimization of Optical Logic Gates using Bias Assisted Carrier-Injected Triple Parallel Microring Resonators", Results in Optics 4 100090 (2021).
G. C. Park†, and K. Park†, "Tunable dual-wavelength absorption switch with graphene based on asymmetric guided-mode resonance structure", Opt. Express 29(5) 7307 (2021). † Equally contributed to this work.
C. Zhang, K. Alberi, C. Honsberg, and K. Park*, "Investigation of GaAs Surface Treatments for ZnSe Growth by Molecular Beam Epitaxy without a Buffer Layer", Appl. Surf. Sci. 149 149245 (2021). TOP 2.4% (Q1) in JCR (Materials Science, Coatings & Films).
2020
N. A. A. Zulkifli†, K. Park†, J. -W. Min, B. S. Ooi, R. B. Zakaria, J. M. Kim*, and C. L. Tan*, "A highly sensitive, large area, and self-powered UV photodetector based on coalescent gallium nitride nanorod/graphene/silicon (111) heterostructure", Appl. Phys. Lett. 117 191103 (2020) † Equally contributed to this work.
K. J. Lee†, J. -W. Min†, B. Turedi, A. Alsalloum, J. -H. Min, Y. J. Kim, Y. J. Yoo, S. Oh, N. Cho, R. C. Subedi, S. Mitra, S. E. Yoon, J. H. Kim, K. Park, T. -H. Chung, S. H. Jung, J. -H. Baek, Y. M. Song, I. Roqan, T. Ng, B. S. Ooi*, and O. M. Bakr*, "Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells", ACS Energy Lett. 5 3295 (2020). † Equally contributed to this work. TOP 1.9% (Q1) in JCR (Electrochemistry).
G. C. Park†, and K. Park†, "Dual-guiding-layer resonance structure with an embedded metasurface for quasi-critical coupling without a perfect mirror", Sci. Rep. 10 16014 (2020). † Equally contributed to this work.
G. J. Lee†, K. Park†, M. S. Kim, S. Chang, T. J. Seok, H.-G. Park, G. Ju, K, Kim, and Y. M. Song*, "Selective and Sensitive Photon Sieve Based on III-V Semiconductor Nanowire Forest Fabricated by Lithography-free Process", Adv. Opt. Mater. 8 2000198 (2020). † Equally contributed to this work. TOP 5.6% (Q1) in JCR (Optics).
K. Park†, J. -W. Min†, R. C. Subedi, M. K. Shakfa, B. Davaasuren, T. K. Ng, B. S. Ooi, C. Kang*, and J. M. Kim*, "THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates", Appl. Surf. Sci. 522 146422 (2020). † Equally contributed to this work. TOP 2.4% (Q1) in JCR (Materials Science, Coatings & Films).
Fayza K. A., S. Ravindran*, K. Park, K. Alameh, A. Bengi, Hajara A. V., and Y. T. Lee, "Advanced Realization and Characterization of Directed Optical Logic Gates using Electroabsorptive Quantum-Well-based Micro Ring Resonator", Optik 221 164426 (2020).
2019
A. Rice*, K. Park, E. Hughes, K. Mukherjee, and K. Alberi, "Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them", Phys. Rev. Mater. 3 121201(R) (2019).
K. Park†, Y. J. Kim†, T. Yoon, S. David, and Y. M. Song*, “A methodological review on material growth and synthesis of solar-driven water splitting photoelectrochemical cells”, RSC Adv. 9 30112 (2019). † Equally contributed to this work.
V. Siva†, K. Park†, M. S. Kim, Y. J. Kim, G. J. Lee, M. J. Kim, and Y. M. Song*, “Mapping the structural, electrical and optical properties of hydrothermally grown phosphorus doped ZnO nanorods for optoelectronic device applications” Nanoscale Res. Lett. 14 110 (2019). † Equally contributed to this work.
2018
I. Maeng, G. Lee, C. Kang, G. W. Ju, K. Park, S. -B. Son, Y. T. Lee, and C. -S. Kee*, “Strong emission of THz radiation from GaAs microstructures on Si” AIP Adv. 8 125027 (2018).
K. Park, J. M. Kim, and K. Alberi*, “Modification of ZnSe/GaAs Interfaces through Elemental Exposure and Light” J. Appl. Phys. 124(22) 225301 (2018).
S. Kang, G. W. Ju, J. -W. Min, D. -S. Lee, Y. T. Lee, H. J. Kim†*, K. Park†*, “Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE” Jpn. J. Appl. Phys. 57(12) 120306 (2018). † Corresponding author.
K. Park*, S. Ravindran, S. Kang, J. -W. Min, H. -Y. Hwang, Y. -D. Jho, Y. -R. Jo, B. -J. Kim, J. Kim, and Y. -T. Lee, “Detailed carrier recombination in lateral composition modulation structure”, Appl. Phys. Express. 11(9) 095801 (2018).
S. Kang, H. J. Choi, E. K. Kang, G. W. Ju, J. -W. Min, Y. T. Lee, D. -S. Lee, K. Park†*, and H. J. Kim†*, “Effect of interfacial AsH3 surge treatment on GaInP/GaAs dual-junction solar cells grown by MOVPE”, Jpn. J. Appl. Phys. 57(8) 080311 (2018). † Corresponding author.
G. W. Ju, B. H. Na, K. Park, H. -Y. Hwang, Y. -D. Jho, N. S. Myoung, S. -Y. Yim, Y. M. Song, and Y. T. Lee*, “Suppressing non-radiative recombination in crown-shaped quantum wells,” Jpn. J. Appl. Phys. 57(3), 030305 (2018).
2017
K. Park, and K. Alberi*, “Tailoring Heterovalent Interface Formation with Light”, Sci. Rep. 7, 8516 (2017). NREL Research Highlight 2017, DOE BES Research Highlight 2017.
K. Park, D. Beaton, Kenneath X. Steirer, and K. Alberi*, “Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications” Appl. Surf. Sci. 405, 247 (2017).
K. Park*, S. Ravindran, S. J. Kang, J. -W. Min, and Y. T. Lee*, “Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures” Appl. Phys. Express 10(2), 025801 (2017).
2016
K. Park*, S. J. Kang, S. Ravindran, J. -W. Min, H. -Y. Hwang, Y. -D. Jho, and Y. T. Lee*, “Robust optical properties of sandwiched lateral composition modulation GaInP structure grown by molecular beam epitaxy” Appl. Phys. Lett. 109(26), 262103 (2016).
K. Park*, S. Ravindran, G. W. Ju, J. W. Min, S. J. Kang, N. S. Myoung, S. -Y. Lim, Y. -R. Jo, B. -J. Kim, and Y. T. Lee*, “Optical properties and carrier dynamics of GaAs/GaInAs multiple quantum-well shell grown on GaAs nanowire by molecular beam epitaxy”, Curr. Appl. Phys. 16, 1622 (2016).
J. -W. Min, H. -Y. Hwang, E. -K. Kang, K. W. Park, C. -H. Kim, D. S. Lee, Y. -D. Jho, S. -Y. Bae*, and Y. T. Lee*, “Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal-organic chemical vapor deposition”, Jpn. J. Appl. Phys. 55, 05FB03 (2016).
2015
Y. H. Lee†, K. W. Park†, S. J. Kang, C. I. Yeo, J. B. Kim, E. K. Kang, Y. M. Song, and Y. T. Lee*, “Fabrication and analysis of thin-film GaAs solar cell on flexible thermoplastic substrate using a low-pressure cold-welding”, Curr. Appl. Phys. 15, 1312 (2015). † Equally contributed to this work.
G. W. Ju, B. H. Na, H. J. Choi, K. W. Park, Y. M. Song, and Y. T. Lee*, “RCEPD with enhanced light absorption by crown-shaped quantum well”, IEEE Photon. Technol. Lett. 27(19), 2047 (2015).
J. W. Min, S. Y. Bae, W. M. Kang, K. W. Park, E. K. Kang, B. J. Kim, D. S. Lee*, and Y. T. Lee*, “Evolutionary growth of microscale single crystalline GaN on amorphous layer by combination of MBE and MOCVD”, CrystEngComm. 17, 5849 (2015).
K. W. Park, S. J. Kang, Sooraj Ravindran, J. W. Min, S. K. Lee, and Y. T. Lee*, “Growth optimization of InAs/GaAs quantum dots for the performance enhancement of quantum dot embedded GaAs tunnel diode for solar cell application”, Semicond. Sci. Technol. 30(7), 075008 (2015).
K. W. Park*, S. J. Kang, S. Ravindran, J. W. Min, S. K. Lee, M. S. Park, and Y. T. Lee*, "Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells", Appl. Phys. Express 8(6), 062302 (2015).
J-. H. Yim, K-. J. Song, K. W. Park, S. J, Kang, Y-. T. Lee*, and Y-. D. Jho*, “Directional terahertz radiation from GaInP lateral superlatice”, J. Nanosci. Nanotechnol. 15, 5171 (2015).
2014
K. W. Park, C. Y. Park, Sooraj Ravindran, J-. S. Jang, Y. R. Jo, B. J. Kim, and Y. T. Lee*, “Observation and tunability of room temperature photoluminescence of AlGaAs/GaInAs/GaAs multiple core-shell nanowire structure grown on Si (100) by molecular beam epitaxy”, Nanoscale Res. Lett. 9, 626 (2014).
K. W. Park, C. Y. Park, Sooraj Ravindran, S. J. Kang, H. Y. Hwang, Y. D. Jho, Y. R. Jo, B. J. Kim, and Y. T. Lee*, “Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy”, J. Appl. Phys. 116, 043516 (2014).
J. W. Shin, H. Y. Jeong, S. J. Yoo, S-. H. Lee, J. H. Han, J. Y. Lee, J. S. Ahn, C. Y. Park, K. W. Park, Y-. T. Lee, J-. G. Kim*, and T. W. Kim*, “Atomic variations in digital alloy InGaP/InGaAlP multiple quantum wells due to thermal treatment”, Jpn. J. Appl. Phys. 53, 115201 (2014).
K. W. Park, C. Y. Park, Sooraj Ravindran, and Y. T. Lee*, “Effect of post-annealing process on the optical properties of lateral composition-modulated GaInP structure grown by molecular beam epitaxy”, J. Mater. Sci. 49(3), 1034 (2014).
2012
K. W. Park, C. Y. Park, and Y. T. Lee*, “Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio”, Appl. Phys. Lett. 101, 051903 (2012).
J. H. You, D. H. Kim, D. U. Lee, K. H. Yoo, C. Y. Park, K. W. Park, S. J. Jang, Y. T. Lee, and T. W. Kim*, “Effect of Temperature on Optical and Electronic Properties of InGaP/InGaAlP Multiple Quantum Wells”, J. Nanosci. Nanotechnol. 12, 5843 (2012).
2010
C. Y. Park, K. W. Park, S. J. Jang, J. S. Yu, and Y. T. Lee*, “Influence of thermal treatment and electron blocking layer on optical properties of InGaP/InGaAlP MQW structures for red RC-LEDs”, Semicond. Sci. Technol. 25, 085012 (2010).
V. V. Lysak, C. Y. Park, K. W. Park, and Y. T. Lee*, “High efficient 635 nm resonant-cavity light-emitting diodes with modified electron stopped layers”, Optoelectron. Adv. Mater. Rapid Commun. 4(6), 778 (2010).
2008
C. Y. Park, J. M. Kim, K. W. Park, J. S. Yu, and Y. T. Lee*, “Improvement of the optical property and uniformity of self-assembled InAs/InGaAs quantum dots by layer-by-layer temperature and substrate rotation”, Physica E 40, 3160 (2008).
International conferences
2023
K. Park*, and K. Alberi, "Doping efficiency enhancement of p-type ZnSe:N grown on GaAs using photo-irradiation", International Conference on Advanced Materials and Devices (ICAMD) 2023, Jeju, Korea (2023).
K. Park*, "Optical and morphological properties of double heterostructure GaAs/ZnSe core-shell nanowires of two different VI/II ratios grown by molecular beam epitaxy", International Conference on Advanced Materials and Devices (ICAMD) 2023, Jeju, Korea (2023).
K. Park*, J. -W. Min, Y. Roh, H. Kim, and C. Kang “Thickness dependent carrier dynamics of nano-porous GaN”, Compound Semiconductor Week (CSW) 2023, Jeju, Korea (2023).
2022
K. Park*, J. -W. Min, S. -Y. Yim, and C. Kang “Ultrafast carrier dynamics of partially strained and strain-relaxed thick InGaN for optoelectronic applications”, International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, Jeju, Korea (2022).
2021
J. Hwang and K. Park*, “Growth study of epitaxial hafnium disulfide on sapphire substrate by three-zone chemical vapor deposition”, International Union of Materials Research Societies - International Conference in Asia (IUMRS-ICA) 2021, Jeju, Korea (2021).
2019
Fayza K. A., S. Ravindran*, K. Park, and J. Kim, “Variable Optical True Time-Delay Using Cascaded Ring Resonator Switches Activated By Electroabsorption For Satellite Communications”, International Conference on Small Satellite (ICSS) 2019, Research Centre Imarat, Hyderabad, India (2019).
K. Alberi*, and K. Park, “Growth Strategies for Modifying Heterovalent Interfaces”, 46th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-46), Santa Fe, NM (2019).
2018
Fayza K. A., S. Ravindran*, K. Park, Gopinath M., and Y. T. Lee, “Design Optimization of Quantum Confined Stark Effect Based Ring Resonator Optical Switches”, International Symposium on Semiconductor Materials and Devices 2018, Nagpur, India (2018).
A. Rice*, K. Park, and K. Alberi, “Cd3As2/II-VI Heterostructures on (111) GaAs”, North American Molecular Beam Epitaxy (NAMBE), MBE-WeM4, Banff, Canada (2018).
C. Zhang*, K. Park, K. Alberi, and C. Honsberg, “Investigation of Various GaAs Surface Treatments for Epitaxial Growth”, 20th International Conference on Molecular Beam Epitaxy (ICMBE), Th-C1-2, Shanghai, China (2018).
Inhee Maeing, Gyu-Seok Lee, Chul Kang, Gun-Wu Ju, Kwangwook Park, Seoung-Bum Son, Yong-Tak Lee, and Chul-Sik Kee*, “Enhanced terahertz emission of polycrystalline GaAs”, 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) 2018, Nagoya, Japan (2018).
K. Alberi*, and K. Park, “Tailoring Heterovalent Interface Formation With Light”, Interfaces in Energy Materials, Poster Session I, Board Number 9 (2018).
K. Park, and K. Alberi*, “Control of II-VI/III-V heterovalent interfaces with light”, American Physics Society (APS) March Meeting 2018, T60 (2018).
2017
K. Park, and K. Alberi*, “Control of II-VI/III-V heterovalent interfaces with light”, North American Molecular Beam Epitaxy Conference (NAMBE), TU-14 (2017).
2016
K. Park, D. Beaton, and K. Alberi*, “Effect of ZnSe/GaAs Interface Treatment in ZnSe Quality Control”, North American Molecular Beam Epitaxy Conference (NAMBE), MBE-TuM3 (2016).
G. W. Ju, K. Park, B. H. Na, S. J. Kang, W. -G. Jung, B. -J. Kim, and Y. T. Lee*, “Effect of Growth Temperature in Formation of Axial AlGaAs Onself-catalyzed GaAs Nanowire and its Structural Analysis”, North American Molecular Beam Epitaxy Conference (NAMBE), MBE-ToP32 (2016).
S. J. Kang, K. W. Park, E. K. Kang, H. J. Choi, S. K. Lee, and Y. T. Lee*, “GaAs single-junction solar cell using modulation doping for low doped p-GaAs base grown by MOVPE”, International Conference on Growth and Epitaxy (ICCGE-18), MoP-G04-15 (2016).
J. W. Min, S. Y. Bae, H. Y. Hwang, E. K. Kang, C. H. Kim, S. J. Kang, G. W. Ju, K. W. Park, B. H. Na, C. Y. Park, Y. D. Jho, and Y. T. Lee*, “Control of the coalescence degree of III-nitride nanowires with AlN buffer layer in PA-MBE for high indium composition of axial InGaN segments”, International Conference on Growth and Epitaxy (ICCGE-18), Tu1-G03-6 (2016).
G. W. Ju, K. W. Park, B. H. Na, J. -W. Min, S. J. Kang, and Y. T. Lee*, “Reduced parasitic growth of self-assisted GaAs nanowires on silicon grown by molecular beam epitaxy”, The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), MoP-G03-23 (2016).
J. W. Min, S. Y. Bae, H. Y. Hwang, E. K. Kang, C. H. Kim, S. J. Kang, G. W. Ju, K. W. Park, B. H. Na, C. Y. Park, Y. D. Jho, and Y. T. Lee*, “Direct comparison of axial InxGa1-xN/GaN heterostructure nanowires grown by PA-MBE for high indium composition of InGaN segments”, The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA), M-P-016 (2016).
S. J. Kang, K. W. Park, E. K. Kang, H. J. Choi, S. K. Lee, J. W. Min, G. W. Ju, H. J. Kim, and Y. T. Lee*, “Enhancement of GaInP/GaAs dual-junction solar cells using modified gas switching sequence for tunnel junction grown by MOVPE”, The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA), M-P-020 (2016).
2015
J. W. Min, S. Y. Bae, E. K. Kang, K. W. Park, C. H. Kim, S. J. Kang, D. S. Lee, and Y. T. Lee*, “Optical properties of microscale single crystalline GaN on amorphous layer by combined epitaxial technique of MBE and MOCVD”, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), Tu-A25 (2015).
K. W. Park, S. J. Kang, S. K. Lee, Sooraj Ravindran, J. W. Min, and Y. T. Lee*, “Performance enhancement of tunnel diode by embedding InAs quantum dot layer”, 30th European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC), 1BV.7.44 (2015).
2014
J. W. Min, E. K. Kang, S. Y. Bae, K. W. Park, S. J. Kang, C. H. Kim, and Y. T. Lee*, “Growth and characterization of high In. content InGaN/GaN nanowire heterostructures on Si(111) by PA-MBE”, 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA), M-P-041 (2014).
J. W. Min, E. K. Kang, S. Y. Bae, K. W. Park, S. J. Kang, C. H. Kim, and Y. T. Lee*, “Effect of buffer layers on the growth of self-catalyst GaN nanowire arrays by PA-MBE on Si(111) substrate”, 12th International Conference on Nanoscience and Nanotechnology (ICNST), P1-21 (2014).
S. J. Kang, K. W. Park, S. K. Lee, C. I. Yeo, J. W. Min, and Y. T. Lee*, “Performance enhancement of GaAs/GaAs tunnel diode using Be delta doping at the junction interface”, 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA), M-P-042 (2014).
K. W. Park, S. J. Kang, Sooraj Ravindran, J. W. Min, and Y. T. Lee*, “Lateral composition modulated GaInP for high efficiency tandem solar cells”, 29th European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC), 1BV.7.11 (2014).
K. W. Park, S. J. Kang, J. W. Min, S. K. Lee, C. I. Yeo, and Y. T. Lee*, “Performance enhancement of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cell application”, 4th Korean-German-French Workshops on Nanophotonics, Scientific Session 6-4 (2014).
J. W. Min, E. K. Kang, K. W. Park, C. H. Kim, S. J. Kang, and Y. T. Lee*, “Growth and characterization of high In. content InGaN/GaN nanowire heterostructures for red emission wavelength range”, 4th Korean-German-French Workshops on Nanophotonics, Scientific Session 1-5 (2014).
2013
Y. H. Lee, C. I. Yeo, K. W. Park, S. J. Kang, J. B. Kim, and Y. T. Lee*, “Crystal quality analysis of lifted-off GaAs film on various foreign substrates by metal bonding method”, Global Photovoltaic Conference (GPVC) 2013, GAS-P-01 (2013).
K. J. Song, J. H. Yim, K. W. Park, S. J. Kang, Y. T. Lee, and Y. D. Jho*, “Directional Terahertz Radiation from GaInP Lateral Superlattice”, 11th International Conference on Nanoscience and Nanotechnology (ICNST), NM1-3 (2013).
S. J. Kang, K. W. Park, Sooraj Ravindran, and Y. T. Lee*, “Numerical analysis of GaAs/GaAs tunnel junction employing the intermediate state for multi-junction solar cells and concentrated photovoltaic application”, 2nd International Conference on Mathematical Modeling in Physical Sciences (IC-MSQUARE), O24P4 (2013).
C. I. Yeo, J. B. Kim, K. W. Park, and Y. T. Lee*, “Biomimetic antireflective AlInP nanostructures fabricated by lithography-free method for solar cell applications”, SPIE Optics & Photonics 2013, 8824 (2013).
2012
K. W. Park, S. J. Kang, J. K. Jeong, and Y. T. Lee*, “Low-temperature growth of GaxIn1-xAs step-graded buffer on GaAs substrate for III-V multi-junction solar cell application”, Global Photovoltaic Conference (GPVC) 2012, GAS-P-01 (2012).
S. J. Kang, K. W. Park, and Y. T. Lee*, “Numerical simulation of GaInP/GaAs dual-junction solar cells employing GaInP, AlGaAs and GaAs tunnel junctions”, Global Photovoltaic Conference (GPVC) 2012, GAS-P-02 (2012).
J. W. Min, K. W. Park, B. H. Na, and Y. T. Lee*, “PAMBE grown metal-rich GaN and InGaN layers on c-plane GaN template”, International Union of Materials Research Society - International Conference in Asia (IUMRS-ICA) 2012, MoP061 (2012).
2010
K. W. Park, C. Y. Park, and Y. T. Lee*, “Structural and optical analysis of the tensile-strained laterally compositional modulated GaInP”, International Union of Materials Research Society - International Conference on Electronic Materials (IUMRS-ICEM) 2010, PIII-293 (2010).
V. V. Lysak, C. Y. Park, K. W. Park, and Y. T. Lee*, “Improvement of efficiency for red resonant-cavity light-emitting diodes using periodic gain medium with modified electron stopped layers”, 9th International Conference on Optical Internet (COOC), P1085 (2010).
C. Y. Park, K. W. Park, and Y. T. Lee, “Growth of GaAs nanowires on (100) and (111) silicon substrate by molecular beam epitaxy”, IEEE Nano Korea 2010, TS02-021 (2010).
K. W. Park, C. Y. Park, and Y. T. Lee*, “Formation of low energy (1.74 eV) lateral superlattice in GaInP by solid source molecular beam epitaxial GaP/InP short-period superlattice growth”, IEEE Nano Korea 2010, TS02-022 (2010).
2009
S. J. Jang, H. J. Choi, C. Y. Park, K. W. Park, J. M. Lim, J. S. Yu, and Y. T. Lee*, “In-situ etching optimization of InGaP/InGaAlP RC-LED structures by using ICP-RIE”, International Conference on Microelectronics and Plasma Technology (ICMAP) 2009, OCD03 (2009).
V. V. Lysak, C. Y. Park, K. W. Park, and Y. T. Lee, “High efficient 635nm resonant-cavity light-emitting diodes with modified electron stopped layers”, 9th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), pp. 113 (2009).
2008
C. Y. Park, J. M. Kim, K. W. Park, J. S. Yu, and Y. T. Lee*, “Effect of GaAs interlayer thickness variations on the optical properties of multiple InAs QD structure”, International Conference on Quantum Dots 2008, Tu-P-047 (2008).
Domestic conferences (2019-)
2024
[TBD] J. Hwang, D. Kim, C. -Y. Cho, and K. Park*, "Probing physical properties of HfS2 grown on GaN/c-sapphire template using reactive RF-sputtering", The 31st Korean Conference on Semiconductor, Jeongseon, Korea (2024).
[TBD] D. Kim, J. Hwang, and K. Park*, “Effect of post-annealing on doping concentration of ZnSnN2 grown by reactive RF magnetron sputtering", The 31st Korean Conference on Semiconductor, Jeongseon, Korea (2024).
2023
J. Hwang, D. Kim, K. -T. Lee, and K. Park*, "Al2O3 passivation layer as a route to prevent oxidation of HfS2 in ambient condition", Korea Physics Society Fall Meeting 2023, Changwon, Korea (2023).
D. Kim, J. Hwang, and K. Park*, “Effect of RF power on oxygen content and surface morphology of ZnSnN2 grown by reactive RF magnetron sputtering", Korea Physics Society Fall Meeting 2023, Changwon, Korea (2023).
J. Hwang, and K. Park*, "Morphological properties of HfS2 affected by Ar flow rate during synthesis in chemical vapor deposition", The 30th Korean Conference on Semiconductors, Jeongseon, Korea (2023).
2022
K. Park, J. -W. Min, G. C. Park, H. Kim, S. -Y. Yim, C. Kang, W. Jeon, and J. Kim, "Metamorphic InP/GaAs growth assisted by superlattice-induced and lattice-matched lateral composition modulation", Korea Physics Society Fall Meeting 2022, Busan, Korea (2022).
J. Hwang, and K. Park*, “Effect of Ar flow rate in surface morphology of HfS2 grown by thermal chemical vapor deposition", Korea Physics Society Fall Meeting 2022, Busan, Korea (2022).
I. Jang, D. Kim, C. -Y. Cho, J. -W. Min, and K. Park*, “Effect of post annealing duration on the aluminum induced crystallization rate of polycrystalline Si on c-plane sapphire substrate", Korea Physics Society Fall Meeting 2022, Busan, Korea (2022).
N. Lim, J. Hwang, J. -W, Min, and K. Park*, “Effect of precursor-depleted post-annealing duration in solid-state phase conversion of ZnO to ZnS", Korea Physics Society Fall Meeting 2022, Busan, Korea (2022).
J. -W. Min, T. J. Ng, B. S. Ooi, Z. Mi, K. Park, and Y. T. Lee, "Molecular beam epitaxy grown GaN-nanowires-based p-i-n structures on Ti-coated substrates for light-emitting diodes applications", Korea Physics Society Fall Meeting of Daegu-Gyeongbuk Branch, Daegu, Korea (2022).
J. Hwang, and K. Park*, “Effect of preheated S as a precursor of HfS2 chemical vapor deposition using three-heater zone", The 29th Korean Conference on Semiconductors, Jeongseon, Korea (2022).
2021
K. Park*, “Effect of above-bandgap photon intensity on the heterostructure grown by laser-assisted molecular beam epitaxy”, Korea Physics Society Fall Meeting 2021, Virtual conference (2021).
K. Park*, J-. W. Min, S. -Y. Yim, and C. Kang, “Intra- and inter-band carrier transition in ternary nitrides”, Korea Physics Society Fall Meeting 2021, Virtual conference (2021).
2020
K. Park*, J. -W. Min, J. Kim, and and C. Kang, “Dissimilarity in similarities between GaN nannorods grown on Si (111) and Si (100) substrates”, Korea Physics Society Fall Meeting 2020, Virtual conference (2020).
K. Park*, A. Rice, and K. Alberi, “Enhancement of surface morphology and electrical properties of Cd3As2 via photo-assisted molecular beam epitaxy”, Korea Physics Society Fall Meeting 2020, Virtual conference (2020).
2019
K. Park*, and K. Alberi, “Thermal evaporation of oxide clusters from II-VI semiconductor surface”, Photonics Conference 2019, Pyeongchang, Korea (2019).
Patents
2020/05 | 김종민, 김창완, 박광욱, 정상현, Hall sensor comprising stress inducing layer and manufacturing method thereof (스트레스 유도층을 포함하는 홀 센서 및 그 제조방법), 등록번호 10-2110904 , 대한민국.
2020/06 | 신찬수, 최재혁, 장현철, 박형호, 박광욱, Method for forming semiconductor layer for light emitting device on substrate and semiconductor light device using thereof (접합 기판 상에 LED용 반도체층의 형성 방법 및 그에 의해 제조된 반도체 발광 소자), 등록번호 10-2123018, 대한민국.
Press and media
2017/12 | United States DOE Research Highlight "Light Perfects Interfaces" https://www.newswise.com/articles/light-perfects-interfaces
2017/08 | NREL Research Highlight "Researchers validate UV light use in improving semiconductors" https://www.nrel.gov/news/press/2017/researchers-validate-uv-lights-use-in-improving-semiconductors.html