52. YJ Shin, SM Lim, WH Jeong, SH Cho, MH Choi, WJ Lee, SM Jeong, SY Bae*, “Growth of (100) β-Ga2O3 single crystal by controlling the capillary behaviors in EFG system”, Japanese Journal of Applied Physics, 62, SF1022 (2023)
51. H Cho, YJ Shin, SM Jeong, SH Kwon, SY Bae*, “Two-step growth of κ-Ga2O3 thin films on 4H-SiC substrates with temperature-varied buffer layers using mist chemical vapor deposition”, Japanese Journal of Applied Physics 62, 015508 (2023)
50. J Kim, YH Kim, YJ Shin, DS Lee*, SY Bae*, “The effect of thermally treated AlN powder on PVT-grown single crystals”, CrystEngComm, 25, 314 (2023)
49. KH Kim, MT Ha, H Lee, M Kim, O Nam, YJ Shin, SM Jeong, SY Bae*, “Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition”, Materials 15, 1050 (2022)
48. JH Min, KH Li, YH Kim, JW Min, CH Kang, KH Kim, JS Lee, KJ Lee, SM Jeong, DS Lee, SY Bae, TK Ng, BS Ooi, “Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers”, ACS Applied Materials & Interfaces 13, 13410 (2021)
47. MT Ha, KH Kim, YJ Shin, SM Jeong, SY Bae*, “Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition”, Advanced Materials Interfaces 8, 2001895 (2021) [Front cover featured]
46. JH Park, X Yang, JY Lee, MD Park, SY Bae, M Pristovsek, H Amano, DS Lee, “The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation” Chemical Science 12, 7713 (2021) [Inside front cover featured]
45. JY Lee, JH Min, SY Bae, MD Park, WL Jeong, JH Park, CM Kang, D-S Lee, “Multiple epitaxial lateral overgrowth of GaN thin films using a patterned graphene mask by metal organic chemical vapor deposition” Journal of Applied Crystallography 53 1502 (2020)
44. MT Ha, LV Lich, YJ Shin, SY Bae, MH Lee, SM Jeong “Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation” Materials 13, 651 (2020)
43. KH Kim, KJ Hwang, H Lee, SM Jeong, MH Lee, and SY Bae, “Improvement of adhesion properties of glass prepared using SiC-deposited graphite mold via low-temperature chemical vapor deposition”, Journal of the Korean Ceramic Society 57, 112 (2020)
42. MT Ha, YJ Shin, SY Bae, SY Park, and SM Jeong, “Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method” Journal of the Korean Ceramic Society 56, 589 (2019)
41. MT Ha, YJ Yu, YJ Shin, SY Bae, MH Lee, CJ Kim, and SM Jeong, “Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals” RSC Advances 9, 26327 (2019)
40. EA Evropeitsev, Y Robin, TV Shubina, SY Bae, S Nitta, DA Kirilenko, Valery Y Davydov, Alexandr N Smirnov, Alexey A Toropov, Maki Kushimoto, Sergey V Ivanov, and Hiroshi Amano “Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults” Physica Status Solidi (b), 1800648 (2019)
39. KJ Hwang, KH Kim, YC Lee, JT Hwang, H Lee, SM Jeong, MH Lee, and SY Bae “Controlled infiltration profile of SiC coating layer on graphite by Si vapor deposition reaction” Journal of Ceramic Processing Research 20, 169 (2019)
38. MT Ha, KH Kim, YJ Kwon, CJ Kim, SM Jeong, and SY Bae “Understanding Thickness Uniformity of Ga2O3 Thin Films Grown by Mist Chemical Vapor Deposition” ECS Journal of Solid State Science and Technology 8, Q3206 (2019)
37. KH Kim, MT Ha, YJ Kwon, H Lee, SM Jeong, and SY Bae, “Growth of 2-Inch α-Ga2O3 Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition” ECS Journal of Solid State Science and Technology 8 (7), Q3165 (2019)
36. Y Robin, EA Evropeitsev, TV Shubina, DA Kirilenko, VY Davydov, AN Smirnov, AA Toropov, IA Eliseyev, SY Bae, M Kushimoto, S Nitta, SV Ivanov, and H Amano “Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core–shell nanorods” Nanoscale 11, 193 ( 2019)
35. OI Barry, K Lekhal, SY Bae, HJ Lee, M Pristovsek, Y Honda, H Amano “Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy”, Physica Status Solidi (RRL)–Rapid Research Letters 12, 1870324 (2018) [Front cover featured]
34. Y Robin, SY Bae, TV Shubina, M Pristovsek, EA Evropeitsev, DA Kirilenko, V Yu Davydov, AN Smirnov, AA Toropov, VN Jmerik, M Kushimoto, S Nitta, SV Ivanov, H Amano, “Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes” Scientific reports 8, 7311 (2018)
33. X Yang, S Nitta, K Nagamatsu, SY Bae, HJ Lee, Y Liu, M Pristovsek, Y Honda, H Amano “Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy” Journal of Crystal Growth 482, 10 (2018)
32. G Avit, M Zeghouane, Y André, D Castelluci, E Gil, SY Baé, H Amano, A Trassoudaine “Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE” CrystEngComm 20, 6207 (2018)
31. OI Barry, A Tanaka, K Nagamatsu, SY Bae, K Lekhal, J Matsushita, M Deki, S Nitta, Y Honda, H Amano “Effect of V/III ratio on the surface morphology and electrical properties of m–plane (10-10) GaN homoepitaxial layers, Journal of Crystal Growth 468, 552 (2017)
30. HJ Lee, SY Bae, K Lekhal, A Tamura, T Suzuki, M Kushimoto, Y Honda, H Amano, “Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si (001) with a directionally sputtered AlN buffer layer” Journal of Crystal Growth 468, 547 (2017)
29. SY Bae, K Lekhal, HJ Lee, T Mitsunari, JW Min, DS Lee, M Kushimoto, Y Honda, H Amano, “Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer” Journal of Crystal Growth 468, 110 (2017)
28. SY Bae, K Lekhal, HJ Lee, JW Min, DS Lee, Y Honda, H Amano, “Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants” Physica Status Solidi (b) 254(8), 1600722 (2017)
27. S. Y. Bae, J. W. Min, H. Y. Hwang, K. Lekhal, H. J. Lee, Y. D. Jho, D. S. Lee, Y. T Lee, H. J. Lee, N. Ikarashi, Y. Honda, H. Amano, “III-nitride core–shell nanorod array on quartz substrates”, Sci. Rep. 7, 45345 (2017)
26. O.I. Barry, A. Tanaka, K. Nagamatsu, S. Y. Bae, K. Lekhal, J. Matsushitaa, M. Deki, S. Nitta, Y. Honda, H. Amano, “Effect of V/III ratio on the surface morphology and electrical properties of m-plane GaN homoepitaxial layers” Journal of Crystal Growth 468, 552 (2017)
25. H. J. Lee*, S. Y. Bae*, K. Lekhal, A. Tamura, T. Suzuki, M. Kushimoto, Y. Honda, and H. Amano, “Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si (001) with a directionally sputtered AlN buffer layer”, Journal of Crystal Growth 468, 547 (2017)
24. S. Y. Bae*, K. Lekhal, H. J. Lee, T. Mitsunari, J. W. Min, D. S. Lee, M. Kushimoto, Y. Honda, and H. Amano, “Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer”, J. Cryst. Growth, Journal of Crystal Growth 468, 110 (2016)
23. H. J. Lee, S. Y. Bae*, K. Lekhal, T. Mitsunari, A. Tamura, Y. Honda, and H. Amano, “Improved crystal quality of semipolar (10-13) GaN on Si(001) substrates using AlN/GaN superlattice interlayer”, J. Cryst. Growth, 454, 114 (2016). [*CA]
22. K. Lekhal*, S. Y. Bae*, H. J. Lee, T. Mitsunari, A. Tamura, M. Deki, Y. Honda, and H. Amano, “Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE”, J. Cryst. Growth, 447, 55 (2016). [*CA]
21. B. O. Jung*, S. Y. Bae*, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode”, Nanoscale Res. Lett. 11, 1 (2016). [*Equal contribution, CA]
20. J. W. Min, H. Y. Hwang, E. K. Kang, K. W. Park, C. H. Kim, D. S. Lee, Y. D. Cho, S. Y. Bae*, and Y. T. Lee*, “Optical and structural properties of microcrystalline GaN on amorphous substrate prepared by combination of MBE and MOCVD”, Jpn. J. Appl. Phys. 55, 05FB03 (2016). [*CA]
19. K. Lekhal*, S. Y. Bae*, H. J. Lee, T. Mitsunari, A. Tamura, Lee, D. S. Lee, M. Deki, Y. Honda, and H. Amano, “Selective area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy”, Jpn. J. Appl. Phys. 55, 05FF03 (2016) [*CA]
18. S. Y. Bae, B. O. Jung, K. Lekhal, D. S. Lee, M. Deki, Y. Honda, and H. Amano, “Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum”, Jpn. J. Appl. Phys. 55, 05FG03 (2016)
17. S. Y. Bae, B. O. Jung, K. Lekhal, S. Y. Kim, J. Y. Lee, D. S. Lee, M. Deki, Y. Honda, and H. Amano, “Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition”, CrystEngComm 18, 1505 (2016). [Back cover featured, Nikkei]
16. H. J. Lee, K. J. Lee, K. Y. Choi, J. H. Eum, D. K. Lee, D. S. Lee, and S. Y. Bae*, “Solution-based high-density arrays of dielectric microsphere structures for improved crystal quality of III-nitride layers on Si substrates”, J. Nanomaterials 2015, 639750 (2015) [*CA]
15. H. J. Lee, J. W. Min, K. J. Lee, K. Y. Choi, J. H. Eum, D. K. Lee, and S. Y. Bae*, “Improved light output power of chemically transferred InGaN/GaN light-emitting diodes for flexible optoelectronic applications”, J. Nanomaterials 2015, 142096 (2015) [*CA]
14. J. W. Min*, S. Y. Bae*, W. M. Kang, K. W. Park, E. K. Kang, B. J. Kim, D. S. Lee, and Y. T. Lee, “Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD”, CrystEngComm 17, 5849 (2015) [*Equal contribution]
13. B. O. Jung, S. Y. Bae, S. Y. Kim, S. Lee, J. Y. Lee, D. S. Lee, Y. Kato, Y. Honda, and H. Amano, “Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region”, Nano Energy 11, 294 (2015)
12. J. H. Min, M. Son, S. Y. Bae, J. Y. Lee, J. Yun, M. J. Maeng, D. G. Kwon, Y. Park, J. I. Shim, M. H. Ham, and D. S. Lee, “Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes”, Opt. Express 22, A1040 (2014).
11. B. O. Jung, S. Y. Bae, Y. Kato, M. Imura, D. S. Lee, Y. Honda, and H. Amano, “Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique”, CrystEngComm 16, 2273 (2014)
10. S. Y. Bae, Y. H. Song, S. R. Jeon, D. M. Kim, Y. D. Jho, and D. S. Lee, “Pseudomorphic thick InGaN growth with a grading interlayer by metal organic chemical vapor deposition for InGaN/GaN p-i-n solar cells”, J. Cryst. Growth 387, 23(2013)
9. D. J. Kong, S. Y. Bae, C. M. Kang and D. S. Lee, “InGaN/GaN microcolumn LEDs with sidewall metal contact arrays”, Opt. Express 21, 22320 (2013)
8. S. Y. Bae, D. J. Kong, J. Y. Lee, D. J. Seo, and D. S. Lee, “Size-controlled InGaN/GaN nanorod array fabrication and optical characterization”, Opt. Express 21, 016854 (2013)
7. S. Y. Bae, J. Y. Lee, J. H. Min, and D. S. Lee, “Morphology evolution of pulsed-flux Ga-polar GaN nanorod growth by MOVPE and its nucleation dependence”, Appl. Phys. Express 6, 075501 (2013)
6. S. B. Choi, S. Y. Bae, D. S. Lee, B. H. Kong, H. K. Cho, J. H. Song, B. J. Ahn, J. F. Kaeding, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical characterization of double peak behavior in {10-11} semipolar light-emitting diodes on miscut m-plane sapphire substrates”, Jpn. J. Appl. Phys. 51, 052101(2012).
5. S. Y. Bae, D. H. Kim, D. S. Lee, S. J. Lee, and J. H. Baek, “Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth”, Electrochem. Solid State Lett. 15, H47 (2012).
4. S. Y. Bae, J. P. Shim, S. R. Jeon, G. Namkoong, and D. S. Lee “Improved photovoltaic effects of a vertical-type InGaN/GaN multiple quantum well solar cell”, Jpn. J. Appl. Phys. 50, 092301(2011)
3. S. Y. Bae, D. S. Lee, B. H. Kong, H. K. Cho, J. F. Kaeding, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Electroluminescence enhancement of (11-22) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates”, Curr. Appl. Phys. 11, 954(2011)
2. G. Namkoong, P. Boland, S. Y. Bae, J. P. Shim, D. S. Lee, S. R. Jeon, K. Foe, K. Latimer, and W. A. Doolittle, “Effect of III-nitride polarization on VOC in p-i-n and MQW solar cells”, Phys. Status Solidi-R 5, 86(2011)
1. Y. M. Song, S. Y. Bae, J. S. Yu, and Y. T. Lee, “Closely packed and aspect-ratio controlled antireflection subwavelength gratings on GaAs using a lens-like shape transfer”, Opt. Lett. 34, 1702 (2009)