Silicon has long been the backbone of classical technologies, powering modern electronics through its unmatched scalability, reliability, and mature manufacturing ecosystem. Today, this same material is emerging as a promising platform for quantum technologies, driven by the ability to engineer color centers and atomic-scale point defects that act as stable quantum bits. Leveraging silicon’s industrial compatibility alongside these defect-based quantum states offers a powerful path toward scalable, integrable, and commercially viable quantum devices. In our lab, we synthesize, characterize, and use these silicon-based quantum bits using various conventional and non-conventional techniques.
Superconducting Nanowire Single-Photon Detectors (SNSPDs) are among the most advanced photon detection technologies, offering exceptional sensitivity, ultra-low timing jitter, and near-unity detection efficiency. Their ability to reliably detect individual photons at high speeds makes them essential for quantum communication, quantum computing, and deep-space optical sensing. As quantum technologies scale, SNSPDs play a critical role in enabling high-fidelity readout and secure transmission of quantum information.
Superconductivity in semiconductors represents a powerful bridge between conventional electronics and quantum-enabled technologies, as demonstrated by the realization of superconductivity in diamond and silicon through heavy doping with group-III elements such as boron. Introducing boron impurities transforms these wide-bandgap materials into superconducting systems, unlocking new device possibilities that combine mechanical, thermal, and electronic robustness with dissipation-free transport. By using advanced and unconventional incorporation methods such as high-energy laser-assisted implantation under extreme conditions, we enable precise control of dopant profiles and push semiconductor superconductivity into new regimes for next-generation quantum and cryogenic technologies.