2024
Journal
One-Time Programmable Memory for Ultra-Low Power ANN Inference Accelerator With Security Against Thermal Fault Injection, Deshmukh, Shreyas and Bende, Ankit and Sanghai, Diti and Saraswat, Vivek and Biswas, Anmol and Kadam, Abhishek and Patil, Shubham and Singh, Ajay Kumar and Deshpande, Veeresh and Ganguly, Udayan, in IEEE Journal of the Electron Devices Society, doi: 10.1109/JEDS.2024.3508759.
Design Space and Variability Analysis of SOI MOSFET for Ultra-Low Power Band-to-Band Tunneling Neurons, Jay Sonawane, Shubham Patil, Abhishek Kadam, Ajay Kumar Singh, Sandip Lashkare, Veeresh Deshpande, Udayan Ganguly, in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2024.3507758.
Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology, Patil, Shubham*, Kadam, Abhishek*, Sonawane, Jay, Deshmukh, Shreyas, Gaurav, R., Singh, Ajay Kumar, Lashkare, Sandip, Deshpande, Veeresh, Somappa, Laxmeesha, Ganguly, Udayan, in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2024.3469177
Reliability of Tunneling Regime for Silicon on Insulator-Based Neuron, Shubham Patil, Abhishek Kadam, Rashmi Saikia, Jay Sonawane, Karansingh Thakor, Ajay Kumar Singh, R Gaurav, Nihar Ranjan Mohapatra, Sandip Lashkare, Veeresh Deshpande and Udayan Ganguly, in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2024.3462377
Structural and Electrical Characterization of Phase Evolution in Epitaxial Gd2O3 Due to Anneal Temperature for Silicon on Insulator Application, Nishant Saurabh*, Shubham Patil*, Paritosh Meihar, Sandeep Kumar, Anand Sharma, Bhaveshkumar Kamaliya, Rakesh GMote, Sandip Lashkare, Apurba Laha, Veeresh Deshpande and Udayan Ganguly, Thin Solid Films, 2024, doi: http://dx.doi.org/10.2139/ssrn.4841437.
Engineering Wafer Scale Single-Crystalline Si Growth on Epitaxial Gd2O3/Si(111) Substrate Using Rf Sputtering for SoI Application, Shubham Patil, Adityanarayan H Pandey, Swagata Bhunia, Sandip Lashkare, Apurba Laha, Veeresh Deshpande, Udayan Ganguly, Thin Solid Films, vol. 806, Oct. 2024, doi: https://doi.org/10.1016/j.tsf.2024.140529.
A 42.3 μm2 Band to Band Tunneling-Based Oscillator Enabled Temperature to Digital Converter With Resolution FoM of 0.16 pJK2 for Embedded Temperature Sensing, Abhishek A Kadam, Shubham Patil, Ajay K Singh, Maryam Shojaei Baghini, Udayan Ganguly and Laxmeesha Somappa, IEEE Solid-State Circuits Letters, July 2024, doi: 10.1109/LSSC.2024.3433610.
Highly Oriented Crystalline Si on Epitaxial Gd2o3/Si (111) Substrate Using Low-Cost Rf Sputtering for Silicon on Insulator Application, Shubham Patil, Sandeep Kumar, Adityanarayan H Pandey, Swagata Bhunia, Bhaveshkumar Kamaliya, Anand Sharma, Sandip Lashkare, Rakesh G Mote, Apurba Laha, Veeresh Deshpande and Udayan Ganguly, in Thin Solid Films, vol. 793, Mar. 2024, Link: https://doi.org/10.1016/j.tsf.2024.140272
Process Voltage Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling based Neuron, Shubham Patil, Anand Sharma, Gaurav R, Abhishek Kadam, Ajay Kumar Singh, Sandip Lashkare, Nihar Ranjan Mohapatra and Udayan Ganguly, in IEEE Transactions on Electron Devices, vol. 71, no. 1, pp. 752-758, Jan. 2024, doi: 10.1109/TED.2023.3331660.
Conference
Ultra Low-Cost Epi-Gd2O3 MOSFET Based Novel 1T Frequency Detector, Nishant Saurabh*, Paritosh Meihar*, Shubham Patil* and Udayan Ganguly, 2024 Device Research Conference (DRC), College Park, MD, USA, 2024, pp. 1-2, doi: 10.1109/DRC61706.2024.10605532.
Resistive Processing Unit-based On-chip ANN Training with Digital Memory, Shreyas Deshmukh, Shubham Patil, Anmol Biswas, Vivek Saraswat, Abhishek Kadam, Ajay K Singh, Laxmeesha Somappa, Maryam Shojaei Baghini and Udayan Ganguly, 2024 IEEE 6th International Conference on AI Circuits and Systems (AICAS), Abu Dhabi, United Arab Emirates, 2024, pp. 462-466, doi: 10.1109/AICAS59952.2024.10595973.
Absorption Coefficient, Mobility and Carrier Lifetime Calculations of P-I-P Quantum Dot Infrared Photodetectors, S. Dongre, P. N. V. A. Kumar, S. Patil, R. Gharate and R. P. Singh, in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Bangalore, India, doi: 10.1109/EDTM58488.2024.10512282.
2023
Journal
Electrical Tunability in Quantum Tunneling based Neuron for Low Power Neuromorphic Computing, Shubham Patil, Jayatika Sakhuja, Anmol Biswas, Sandip Lashkare, and Udayan Ganguly, IEEE Transactions on Electron Devices, under review.
Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO2 on Silicon, Md Hanif Ali, Adityanarayan Pandey, Rowtu Srinu, Paritosh Meihar, Shubham Patil, Sandip Lashkare, Veeresh Deshpande, Udayan Ganguly, in IEEE Transactions on Electron Devices, vol. 70, no. 11, pp. 6034-6041, Nov. 2023, doi: 10.1109/TED.2023.3319278.
Phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application, Shubham Patil, Sandeep Kumar, Bhaveshkumar Kamaliya, Adityanarayan H Pandey, Rakesh G. Mote, Apurba Laha, Udayan Ganguly, Thin Solid Films, Volume 778, 2023, 139907, ISSN 0040-6090, https://doi.org/10.1016/j.tsf.2023.139907.
Integration of Non-Filamentary Pr0.7Ca0.3MnO3– Based Memristor With Silicon-PN Junction, J. Sakhuja, S. Rowtu, S. Patil, S. Lashkare and U. Ganguly, in IEEE Electron Device Letters, vol. 44, no. 5, pp. 741-744, May 2023, doi: 10.1109/LED.2023.3257430.
Conference
Enhancement in Bipolar Conductance Linearity by One Transistor - One Resistor (1T1R) cell with Non-Filamentary PCMO-RRAM as Synapse for Neural Networks, J. Sakhuja, S. Patil, S. Mondal, S. Lashkare and U. Ganguly, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Seoul, Korea, Republic of, 2023, pp. 1-3, doi: 10.1109/EDTM55494.2023.10103054.
Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing, Shubham Patil, Jayatika Sakhuja, Ajay Kumar Singh, Anmol Biswas, Vivek Saraswat, Sandeep Kumar, Sandip Lashkare, Udayan Ganguly, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Seoul, Korea, Republic of, 2023, pp. 1-3, doi: 10.1109/EDTM55494.2023.10103118. (Best poster)
2022
Journal
Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET, N. Saurabh, S. Patil, A. Rawat, T. Chiarella, B. Parvais and U. Ganguly,in IEEE Electron Device Letters, vol. 43, no. 8, pp. 1171-1174, Aug. 2022, doi: 10.1109/LED.2022.3185025.
An Accurate Process-Induced Variability-Aware Compact Model-Based Circuit Performance Estimation for Design-Technology Co-Optimization, S. Patil, A. Rawat and U. Ganguly, in IEEE Transactions on Electron Devices, vol. 69, no. 1, pp. 45-50, Jan. 2022, doi: 10.1109/TED.2021.3131966.
2021
Conference
Physics-based parameter extraction methodology for channel doping gradient (CDG) LDMOS transistors based on HiSIM-HV2 model, S. Patil, K. N. Kaushal, M. S. Bhoir and N. R. Mohapatra, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Chengdu, China, 2021, pp. 1-3, doi: 10.1109/EDTM50988.2021.9420971.
Shubham Patil, Jayatika Sakhuja, Ajay Kumar Singh, Anmol Biswas, Vivek Saraswat, Sandeep Kumar, Sandip Gangadharrao Lashkare, Udayan Ganguly, "Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing” (Application No. 202321013437).
Jayatika Sakhuja, Rowtu Srinu, Shubham Patil, Sandip Gangadharrao Lashkare, Udayan Ganguly, “Method for Performing Silicon Integration Process for Resistive Memories” (Application No. 202321013267).