2026.9-2028.8, High proton-conductive BaZrO3 thin films on Al2O3 for efficient hydrogen energy devices (Ministry of Education 교육부)
2026.9-2028.8, Ionic conductors with 1,000-fold enhanced conductivity through structural control of hexagonal perovskites (Ministry of Education 교육부)
2026.9-2028.8, Multistate polarization-based ferroelectric synaptic devices for process-in-memory neural networks and reinforcement learning (Ministry of Education 교육부)
2026.3-2031.2, Physical design of CMOS-compatible biomimetic all-solid-state ionotronic processor-in-memory neural network for real-time motion-recognizing physical AI (Ministry of Science and ICT 과학기술정보통신부 핵심연구)
2025.6-2026.12, Ionotronic neural network for physical intelligent computing (DGIST)
2025.3-2026.12, Analysis of MPW and PPW signals measured by magnetic methods and their correlation with clinical data (DGIST)
2022.1-2028.12, Ferroelectric topological quantum devices with ultra-low power consumption, super-intelligence, and CMOS compatibility for carbon neutrality (DGIST)