Publication

[18] High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide

J. Y. Kim, M. Choi, Y. J. Lee, S. H. Park, S. Choi, J. H. Baek, I. H. Im, S. J. Kim, and H. W. Jang*

ACS Appl. Mater. Interfaces, accepted (2024) [link]

[17] Study on the Sodium-Doped Titania Interface-Type Memristor

M. Kim, S. Lee, S. J. Kim, B. M. Lim, B. Kang, and H. Lee*

ACS Appl. Mater. Interfaces 16, 13 (2024) [link]

[16] High-Reliability and Self-Rectifying Alkali Ion Memristor through Bottom Electrode Design and Dopant Incorporation

B. M. Lim, Y. M. Lee, C. S. Yoo, M. Kim, S. J. Kim, S. Kim, J. J. Yang, and H. Lee*

ACS Nano, 3c11325 (2024) [link]

[15] Fast responding and highly selective chemoresistive humidity sensor based on hydrated V₂O₅ nanobelts for real-time breath monitoring

T. H. Eom , S. E. Lee, Y. J. Kim, S. Choi, G. B. Nam, J. E. Ryu, T. H. Lee, J. W. Yang, S.H. Cho, S. J. Kim, S. E. Jun, S. Lee, S. Kim, H. J. Park*, H. W. Jang* 

Sensors and Actuators B: Chemical, 135034 (2024) [link]

[14] Enhancing Performance of Ultraviolet C Photodetectors Through Single-Domain Epitaxy of Monoclinic β-Ga2O3 Films and Tailored Anti-Reflection Coating

B. Kim, S. J. Kim, T. H. Lee, D. Yang, D. Lee, W. Sohn, E. Yoon, Y. Park*, H. W. Jang*  

Small Methods, 2300933 (2023) [link]

[13] Perovskites‐based Diffusive Memristors for Artificial Mechano‐Nociceptive System

I. H. Im, J. H. Baek, S. J. Kim, J. Kim, S. H. Park, J. Y. Kim, J. J. Yang, H. W. Jang* 

Advanced Materials, 36(1). 2307334 (2023) [link]

[12] Rationally designed graphene channels for real-time sodium ion detection for electronic tongue

C. W. Lee,  S. E. Jun,  S. J. Kim,  T. H. Lee,  S. A. Lee,  J. W. Yang,  J. H. Cho,  S. Choi,  C. Kim,  S. Y. Kim, H. W. Jang* 

InfoMat, e12427, 2023 [link]

[11] Two-Terminal Lithium-Mediated Artificial Synapses with Enhanced Weight Modulation for Feasible Hardware Neural Networks 

J. H. Baek, K. J. Kwak, S. J. Kim, J. Kim, J. Y. Kim, I. H. Im, S. Lee, K. Kang, H. W. Jang * 

Nano-Micro Letters, 15, 69, 2023 [link]

[10] Controlling Threshold and Resistive Switch Functionalities in Ag‐Incorporated Organometallic Halide Perovskites for Memristive Crossbar Array

I. H. Im, S. J. Kim, J. H. Baek, K. J. Kwak, T. H. Lee, J. W. Yang, D. E. Lee, J. Y. Kim, H. R. Kwon, D. Y. Heo, S. Y. Kim, H. W. Jang* 

Adv. Funct. Mater., 221135, 2022 [link]

[9] Ambient Stable All Inorganic CsCu2I3 Artificial Synapses for Neurocomputing

K.J. Kwak, J.H. Baek, D.E. Lee, I. Im, J. Kim, S. J. Kim, Y.J. Lee, J.Y. Kim, H.W. Jang*

Nano letter, 22, 14, 6010-6017, 2022 [cover] [link]

[8] Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses

S. J. Kim, T. H. Lee, J. Yang, J. W. Yang, Y. J. Lee, M. J. Choi, S. A. Lee, J. M. Suh, K. J. Kwak, J. H. Baek, I. H. Im, D. E. Lee, J. Y. Kim, J. Kim, J. S. Han, S. Y. Kim, D. Lee*, N. G. Park*, H. W. Jang*

Materials Today, 52, 19-30, 2022 [Highlighted paper] [link]

[7] Visible Light Driven Ultrasensitive and Selective NO2 Detection in Tin Oxide Nanoparticles with Sulfur Doping Assisted by l‐Cysteine

T. H. Eom, S. H. Cho, J. M. Suh, T. Kim, J. W. Yang, T. H. Lee, S. E. Jun, S. J. Kim, J. Lee, S. Hong, H. W. Jang*

Small, 2106613, 2022 [link]

[6] Halide perovskites for Memristive data storage and artificial synapses

K. J. Kwak†, D. E. Lee†, S. J. Kim†, H. W. Jang*

J. Phys. Chem. Lett., 12(37), 8999-9010, 2021 [link]

[5] High Hole Mobility Inorganic Halide Perovskite Field‐Effect Transistors with Enhanced Phase Stability and Interfacial Defect Tolerance 

Y. J. Lee, J. S. Han, D. E. Lee, T. H. Lee, J. Y. Kim, J. M. Suh, J. H. Lee, I. H. Im, S. J. Kim, K. J. Kwak, H. W. Jang*

Adv.Electron.Mater., 2100624, 2021 [link]

[4] Strong Fermi-level pinning at metal contacts to halide perovskites

K. Hong, K. C. Kwon, K. S. Choi, Q. V. Le, S. J. Kim, J. S. Han, J. M. Suh, S. Y. Kim*, C.M. SutterFella*, H. W. Jang* 

J. Mater. Chem. C, 9, 15212-15220, 2021 [link]

[3] Competing memristors for brain-inspired computing

S. J. Kim, S. B. Kim*, H. W. Jang* 

iScience, 1, 101889 2020 [front cover] [link]

[2] Memristive devices for new computing paradigms

I. H. Im†, S. J. Kim†, H. W. Jang* 

Adv.Intell.Syst, 2(11), 2000105, 2020 [link]

[1] Lead-Free Dual Phase Halide Perovskites for Preconditioned Conducting-Bridge Memory

J. S. Han, Q. V. Le, H. Kim, Y. J. Lee, D. E. Lee, I. H. Im, M. K. Lee, S. J. Kim, J. Kim, K. J. Kwak, M.J. Choi, S. A. lee, K. Hong, S. Y. Kim*, H. W. Jang*

Small, 16(41), 2003225, 2020 [link]