Derive an expression for barrier potential of a p-n junction diode under unbiased condition.
Describe p-n junction diode under forward biased and reverse biased conditions and discuss V-I characteristics of a p-n junction diode.
Explain V-I characteristic of the Zener diode and distinguish between Zener and avalanche breakdown mechanisms.
Explain the principle, construction and working of LED. What are the advantages and disadvantages of it.
Explain the construction and working of a PIN photodiode.
Explain the principle, construction, working and V-I characteristics of Solar cell.
Describe the working of half-wave rectifier with neat circuit diagram and derive an expression for its efficiency.
Explain the working of centre tapped full wave rectifier with neat circuit diagram and derive an expression for its efficiency.
Draw and explain the circuit diagram of a full wave rectifier using L- section filter and derive the expression for its ripple factor.
Explain the construction and operation of a p-n-p transistor, and mention the current components.
Discuss the input and output characteristics of CB configuration. Explain the early effect.
Discuss the input and output characteristics of CE configuration. Indicate cut-off, active, and saturation regions.
Describe the Emitter-feedback bias circuit and obtain its stability factor.
Explain fixed bias circuit and derive an expression of stability factor for it.
Describe the construction of N channel JFET and explain its operation with VGS= 0 and VDS is increased from zero.