1. Rajib Rahman, Lloyd C. L. Hollenberg, and Gerhard Klimeck, “Theory and simulations of controlled electronic states bound to a single dopant in silicon”, Book chapter in “Single Atom Nanoelectronics”, edited by Enrico Prati and Takahiro Shinada, published by Pan Stanford Publishing, ISBN 978-981-4316-31-6 (2013).
2. G. Lansbergen, R. Rahman, G.C Tettamanzi, A. Verduijn, L. Hollenberg, G. Klimeck, S. Rogge, “Dopant Metrology in Advanced FinFETs”, Book chapter in “CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications” edited by Nadine Collaert, ISBN 9789814364027 (2011).
3. Shaikh Ahmed, Neerav Kharche, Rajib Rahman, Muhammad Usman, Sunhee Lee, Hoon Ryu, Hansang Bae, Steve Clark, Benjamin Haley, Maxim Naumov, Faisal Saied, Marek Korkusinski, Rick Kennel, Michael McLennan, Timothy B. Boykin, and Gerhard Klimeck. "Multimillion Atom Simulations with NEMO 3-D", Springer Encyclopedia for Complexity and Systems Science (ISBN: 978-0-387-75888-6), pg. 5745-5783, June 2009, Springer-Verlag, Germany.