1. “Valley filtering and spatial maps of coupling between silicon donors and quantum dots”, J. Salfi, B. Voisin, A. Tankasala, J. Bocquel, M. Usman, M. Y. Simmons, L. C. L. Hollenberg, R. Rahman, S. Rogge, Phys. Rev. X 8, 031049 (2018).
2. “Addressable electron spin resonance using donors and donor molecules in silicon”, Samuel J Hile, Lukas Fricke, Matthew G House, Eldad Peretz, Chin Yi Chen, Yu Wang, Matthew Broome, Samuel K Gorman, Joris G Keizer, Rajib Rahman, Michelle Y Simmons, Science Advances 4 (7), eaaq1459 (2018).
3. "Valley dependent anisotropic spin splitting in silicon quantum dots", Rifat Ferdous, Erika Kawakami, Pasquale Scarlino, Michał P Nowak, DR Ward, DE Savage, MG Lagally, SN Coppersmith, Mark Friesen, Mark A Eriksson, Lieven MK Vandersypen, Rajib Rahman, Nature Quantum Information (npjqi) 4, 1-8 (2018).
4. "Interface induced spin-orbit interaction in silicon quantum dots and prospects of scalability", Rifat Ferdous, Kok W Chan, Menno Veldhorst, JCC Hwang, CH Yang, Gerhard Klimeck, Andrea Morello, Andrew S Dzurak, Rajib Rahman, Phys. Rev. B Rapid Comm. 97 (24), 241401 (2018).
5. "Two-electron states of a group V donor in silicon from atomistic configuration interaction", Archana Tankasala, Joseph Salfi, Juanita Bocquel, Benoit Voisin, Muhammad Usman, Gerhard Klimeck, Michelle Y Simmons, Lloyd CL Hollenberg, Sven Rogge, Rajib Rahman, Phys. Rev. B, 97, 195301 (2018).
6. "Optimization of edge state velocity in the integer quantum Hall regime", Harshad Sahasrabudhe, Bozidar Novakovic, James Nakamura, Saeed Fallahi, Michael Povolotskyi, Gerhard Klimeck, Rajib Rahman, Michael J Manfra, Phys. Rev. B 97, 085302 (2018).
7. "Dramatic impact of dimensionality on the electrostatics of PN junctions and its sensing and switching applications", Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen, Harshad Sahasrabudhe, Gerhard Klimeck, Rajib Rahman, IEEE Transactions on Nanotechnology, 17, 293 (2018).
8. “Switching Mechanisms and the scalability of vertical TFETs”, F. Chen, H. Ilatikhameneh, Y. Tan, G. Klimeck, R. Rahman, IEEE Trans. On Elect. Dev. 65, 3065 (2018).
9. “Channel thickness optimization for ultra thin and 2D chemically doped TFETs”, Chinyi Chen, Tarek Ameen, Hesameddin Ilatikhameneh, Rajib Rahman, Gerhard Klimeck, Joerg Appenzeller, accepted in IEEE Trans. on Elect. Dev. (2018)
10. "Sensitivity challenge of steep transistors", H. Ilatikhameneh, T. Ameen, C. Chen, G. Klimeck, R. Rahman, IEEE Transactions on Electron Devices 65, 1633 (2018).
11. "Theoretical study of strain-dependent optical absorption in doped Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dot”, Tarek Beshari, Hesameddin Ilatikhameneh, Archana Tankasala, Yuling Hsueh, James Charles, Jim Fonseca, Michael Povolotskyi, Jun Kim, Sanjay Krishna, Monica S Allen, Jeffery Allen, Rajib Rahman, Gerhard Klimeck, Beilstein J. Nanotechnology 9, 1075-1084 (2018).
12. "Atomically engineered electronic spin lifetimes of 30s in silicon", Thomas F Watson, Bent Weber, Yu-Ling Hsueh, Lloyd CL Hollenberg, Rajib Rahman, Michelle Y Simmons, Science Advances 3 (3), e1602811 (2017).
13. "Silicon quantum processor with robust long distance qubit couplings", Guilherme Tosi, Fahd Mohiyaddin, Tenberg, Rajib Rahman, Gerhard Klimeck, Andrea Morello, Nature Communications 8, 450 (2017).
14. "Direct observation of 2D electrostatics and Ohmic contacts in template grown Graphene/WSe2 heterostructures", Changxi Zheng, Qianhui Zhang, Bent Weber, Hesameddin Ilatikhameneh, Fan Chen, Harshad Sahasrabudhe, Rajib Rahman, Shiqiang Li, Zhen Chen, Jack Hellerstedt, Yupeng Zhang, Wen Hui Duan, Qiaoliang Bao, Michael S Fuhrer, ACS Nano 11 (3), 2785-2793 (2017).
15. “A Multiscale Modeling of Triple-Heterojunction Tunneling FETs”, Jun Huang, Michael Povolotskyi, Hesameddin Ilatikhameneh, Tarek Ameen, Rajib Rahman, Mark Rodwell, Pengyu Long, Gerhard Klimeck, IEEE Transactions on Electron Devices 64 (6), 2728 – 2735 (2017).
16. "Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions", Tarek Ameen, Hesameddin Ilatikhameneh, Jun Huang, Michael Povolotskyi, Rajib Rahman, Gerhard Klimeck, IEEE Transactions on Electron Devices 64 (6), 2512-2518 (2017).
17. “Thickness Engineered Tunnel Field Effect Transistor”, Fan W. Chen, Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic, Yaohua Tan, Gerhard Klimeck, Rajib Rahman, Electron Device Letters, Vol. 38, Issue 1, 130-133 (2017).
18. "Quantum simulation of the Hubbard model with dopant atoms in silicon”, J. Salfi, J. Mol, R. Rahman, G. Klimeck, M. Y. Simmons, L. C. L. Hollenberg, S. Rogge, Nature Communications 7, 11342 (2016).
19. “Highly tunable exchange in donor qubits in silicon”, Yu Wang, Archana Tankasala, Lloyd C. L. Hollenberg, Gerhard Klimeck, Michelle Y. Simmons, Rajib Rahman, Nature (NPJ) Quantum Information 2, 16008 (2016).
20. “Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision”, M. Usman, J. Bocquel, J. Salfi, B. Voisin, A. Tankasala, R. Rahman, M. Y. Simmons, S. Rogge, L. C. L. Hollenberg, Nature Nanotechnology 11, 763-768 (2016).
21. “Characterizing Si:P quantum dot qubits with spin resonance techniques”, Yu Wang, Chinyi Chen, Gerhard Klimeck, Michelle Y. Simmons, Rajib Rahman, Scientific Reports 3, 31830 (2016).
22. "Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors", Tarek Ameen, Hesameddin Ilatikhameneh, Gerhard Klimeck, Rajib Rahman, Scientific Reports 6, 28515 (2016).
23. "Saving Moore’s Law down to 1 nm channels with anisotropic effective mass", Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic, Yaohua Tan, Gerhard Klimeck, Rajib Rahman, Scientific Reports 6, 31501 (2016).
24. "Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions", Fahd Mohiyaddin, Rachpon Kalra, Arne Laucht, Rajib Rahman, Gerhard Klimeck, Andrea Morello, Physical Review B 94, 045314 (2016).
25. "From Fowler-Nordheim to Non-equilibrium Green’s function modeling of tunneling", H. Ilatikhameneh, R. Salazar, G. Klimeck, R. Rahman, J. Appenzeller, IEEE Transactions on Electron Devices (TED), Vol. 63, Issue 7, p 2871-2878 (2016).
26. "Universal behavior of strain in quantum dots”, H. Ilatikhameneh, T. Ameen, G. Klimeck, R. Rahman, IEEE Journal of Quantum Electronics, vol. 52, no. 7, 7000308 (2016).
27. "Design rules for high performance tunnel transistors from 2-D materials", H. Ilatikhameneh, G. Klimeck, J. Appenzeller, R. Rahman, IEEE Journal of the Electron Devices Society (J-EDS) Vol. 4, Issue 5, p 260-265 (2016).
28. "Configurable electrostatically doped high performance bilayer Graphene Tunnel FET", F. W. Chen, H. Ilatikhameneh, G. Klimeck, Z. Chen, R. Rahman, IEEE Journal of the Electron Devices Society (J-EDS), Vol. 4, Issue 3, p 124 -128 (2016).
29. "Electrically tunable bandgaps in bilayer MoS2", T. Chu, H. Ilatikhameneh, G. Klimeck, R. Rahman, Z. Chen, Nanoletters 15(12), 8000-8007 (2015).
30. "Electrically controlling single spin qubits in a continuous microwave field", Arne Laucht, Juha T. Muhonen, Fahd A. Mohiyaddin, Rachpon Kalra, Juan P. Dehollain, Solomon Freer, Fay E. Hudson, Menno Veldhorst, Rajib Rahman, Gerhard Klimeck, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak and Andrea Morello, Science Advances Vol. 1 no. 3 e1500022 (2015).
31. "Can Tunnel FETs scale below 10 nm?", H. Ilatikhameneh, G. Klimeck, R. Rahman, Electron Device Letters Vol. 37, pages 115-118 (Nov, 2015).
32. “Dielectric engineered tunnel field effect transistor”, H. Ilitaikhameneh, G. Klimeck, J. Appenzeller, R. Rahman, Electron Device Letters, Vol. 36, No. 10, pp 1097-1100 (2015).
33. “Scaling theory of electrically doped 2D material transistors”, H. Ilatikhameneh, G. Klimeck, J. Appenzeller, R. Rahman, Electron Device Letters Vol. 36, Issue 7, p 726 (2015).
34. “A New Compact Model for Tunneling-Field Effect Transistors: An Insight on How to Obtain Accurate Results”, R. Salazar, H. Ilatikhameneh, R. Rahman, G. Klimeck, J. Appenzeller, Journal of Applied Physics 118, 164304 (2015).
35. “Influence of strain and electric fields on hyperfine of shallow donors in silicon”, M. Usman, C. D. Hill, R. Rahman, M. Y. Simmons, G. Klimeck, S. Rogge, L. C. L. Hollenberg, Phys. Rev. B 91, 245209 (2015).
36. “Interface-induced heavy-hole/light-hole splitting of acceptors in silicon”, J. Mol, J. Salfi, R. Rahman, Y. Hsueh, J. W. Miwa, G. Klimeck, M. Y. Simmons, S. Rogge, Applied Physics Letters 106, 203110 (2015).
37. “Polarization Engineered III-Nitride Heterojunction Tunnel Field Effect Transistors”, Wenjun Li, Saima Sharmin, Hesameddin Ilatikhamenh, Rajib Rahman, Y. Lu, J. Wang, X. Yan, Alan Seabaugh, Gerhard Klimeck, Debdeep Jena, Patrick Fay, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (JxCDC), Vol. 1, pp 28-34 (2015).
38. “Tunnel field effect transistors in two dimensional transition metal dichalcogenides”, H. Ilatikhameneh, B. Novakovic, Y. Tan, G. Klimeck, R. Rahman, J. Appenzeller, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (JxCDC), Vol. 1, pp 12-18 (2015).
39. “Effect of Strain on the Electronic and Optical Properties of Ge/Si Dome Shaped Nanocrystals”, M. Neupane, R. Rahman, and R. Lake, Physical Chemistry Chemical Physics 17 (4), 2484-2493 (2015).
40. “Spatially resolved sequential tunneling on single atoms in silicon”, B. Voisin, J. Salfi, J. Bocquel, R. Rahman, and S. Rogge, Journal of Physics Condensed Matter Vol. 27, Issue 15, pp 154203 (2015) (Invited in Special Issue on single dopants in semiconductors).
41. “Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory”, M. Usman, R. Rahman, J. Salfi, J. Bocquel, B. Voisin, S. Rogge, G. Klimeck, and L. C. L. Hollenberg, Journal of Physics Condensed Matter Vol. 27, Issue 15, pp 154207 (2015) (Invited in Special Issue on single dopants in semiconductors).
42. “Spin-lattice relaxation times of single donors and donor clusters in silicon”, Y. Hsueh, H. Buch, Y. Tan, Y. Wang, L. C. L. Hollenberg, G. Klimeck, M. Y. Simmons, and R. Rahman, Physical Review Letters 113, 246406 (2014).
43. “Coherent Control of a Single Silicon-29 Nuclear Spin Qubit”, J. J. Pla, F. A. Mohiyaddin, K. Y. Tan, J. P. Dehollain, R. Rahman, G. Klimeck, D. N. Jamieson, A. S. Dzurak, and A. Morello, Physical Review Letters 113, 246801 (2014).
44. “Spatially resolving valley quantum interference of a donor in silicon”, Joseph Salfi, Jan Mol, Rajib Rahman, Gerhard Klimeck, Michelle Simmons, Lloyd Hollenberg, and Sven Rogge, Nature Materials 13, 605 (2014).
45. “Spin Blockade and Exchange in Coulomb-Confined Silicon Double Quantum Dots”, Bent Weber, Y. H. Matthias Tan, Suddhasatta Mahapatra, Thomas F. Watson, Hoon Ryu, Rajib Rahman, Lloyd C. L. Hollenberg, Gerhard Klimeck and Michelle Y. Simmons, Nature Nanotechnology 9, 430 (2014).
46. “Spin readout and addressability of Phosphorus donor clusters in silicon”, H. Buch, S. Mahapatra, R. Rahman, A. Morello, and M.Y. Simmons, Nature Communications 4, 2017 (2013).
47. “Charge sensed Pauli blockade in metal-oxide-semiconductor lateral double quantum dot”, Khoi Thi Nguyen, Michael Lilly, Erik Nielsen, Nathaniel C. Bishop, Rajib Rahman, Ralph Young, Joel Wendt, Jason Domiguez, Tammy Pluym, Jeffery Stevens, Tzu-Ming Lu, Richard Partain Muller, and Malcolm Carroll, Nanoletters 13 (12), 5785 (2013).
48. “Non-invasive spatial metrology of single atom devices”, Fahd A. Mohiyaddin, Rajib Rahman, Rachpon Kalra, Gerhard Klimeck, Lloyd C. L. Hollenberg, Jarryd Pla, Andrew S. Dzurak, Gerhard Klimeck, Andrea Morello, Nanoletters 13 (5), 1903 (2013).
49. "A many-electron tight binding method for the analysis of quantum dot systems", Erik Nielsen, Rajib Rahman, Richard Muller, Journal of Applied Physics 112, 114304 (2012).
50. "Electronic states of Ge/Si nanocrystals with crescent shaped Ge-cores", Mahesh R. Neupane, Roger K. Lake, and Rajib Rahman, Journal of Applied Physics 112, 024326 (2012).
51. "SiGe/sSi quantum dot electron spin decoherence dependence on 73Ge", Wayne M. Witzel, Rajib Rahman, Malcolm S. Carroll, Physical Review B 85, 205312 (2012).
52. "Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric", Rajib Rahman, Erik Nielsen, Richard P. Muller, Malcolm S. Carroll, Physical Review B 85, 125423 (2012).
53. "Effect of core size on carrier lifetimes of Ge-core/Si-shell quantum dot based non-volatile memories", M. Neupane, R. Lake, R. Rahman, Journal of Applied Physics 110, 074306 (2011).
54. "Electric field reduced charging energies and two electron bound states in a single donor in silicon", R. Rahman, G. P. Lansbergen, J. Verduijn, G. C. Tettamanzi, S. H. Park, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge, Physical Review B 84, 115428 (2011).
55. "Lifetime enhanced transport in silicon due to spin and valley blockade", G. P. Lansbergen, R. Rahman, J. Verduijn, G. C. Tettamanzi, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge, Physical Review Letters 107, pg. 136602 (2011).
56. "Engineered valley-orbit splittings in quantum confined nanostructures in silicon", Rajib Rahman, Arjan Verduijn, Neerav Kharche, Gabriel Lansbergen, Gerhard Klimeck, Lloyd Hollenberg, and Sven Rogge, Physical Review B 83, 195323 (2011).
57. "Stark tuning of the charge states of a two-donor molecule in silicon", Rajib Rahman, Seung Hyun Park, Gerhard Klimeck, and Lloyd Hollenberg, Nanotechnology 22, 225202 (2011).
58. "Coherent electron transport by adiabatic passage in an imperfect donor chain", Rajib Rahman, Richard P. Muller, James E. Levy, Malcolm S. Carroll, Gerhard Klimeck, Andrew D. Greentree, Lloyd C. L. Hollenberg, Physical Review B vol. 82, 155315 (2010).
59. "Orbital Stark effect and quantum confinement transition of donors in silicon", Rajib Rahman, G. P. Lansbergen, Seung H. Park, J. Verduijn, Gerhard Klimeck, S. Rogge, Lloyd C. L. Hollenberg, Physical Review B 80, 165314 (2009).
60. "Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors", Rajib Rahman, Seung H. Park, Timothy B. Boykin, Gerhard Klimeck, Sven Rogge, Lloyd C. L. Hollenberg, Physical Review B 80, 155301 (2009).
61. "Mapping donor electron wave function deformations at sub-Bohr orbit resolution", Seung H. Park, Rajib Rahman, Gerhard Klimeck, Lloyd C. L. Hollenberg, Physical Review Letters 103, 106802 (2009).
62. "Atomistic simulations of adiabatic coherent electron transport in triple donor systems", Rajib Rahman, Seung H. Park, Jared H. Cole, Andrew D. Greentree, Richard P. Muller, Gerhard Klimeck, Lloyd C. L. Hollenberg, Physical Review B 80, 035302 (2009).
63. "Gate induced quantum confinement transition of a single dopant atom in a Si FinFET", G.P. Lansbergen, R. Rahman, C.J. Wellard, P.E. Rutten, J. Caro, N. Collaert, S. Biesemans, I. Woo, G. Klimeck, L.C.L. Hollenberg, and S. Rogge, Nature Physics 4, 656 (2008).
64. "Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D", M. Naumov, S. Lee, B. Haley, H. Bae, S. Clark, R. Rahman, H. Ryu, F. Saied, and G. Klimeck, Journal of Computational Electronics 5, 223 (2008).
65. "High Precision Quantum Control of Single Donor Spins in Silicon", R. Rahman, C. J. Wellard, F. R. Bradbury, M. Prada, J. Cole, G. Klimeck, L. C. L. Hollenberg, Physical Review Letters 99, 036403 (2007).
66. “Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I - Models and Benchmarks”, G. Klimeck, S. Ahmed, H. Bae, N. Kharche, S. Clark, B. Haley, S. Lee, M. Naumov, H. Ryu, F. Saied, M. Prada, M. Korkusinski, and T. B. Boykin, R. Rahman, IEEE Transactions on Electron Devices (Invited), Vol. 54, No. 9, p. 2079 (2007).