UV Photodetectors

Gallium oxide

Gallium oxide (Ga2O3) has attracted tremendous research interest in the recent years, owing to its ultra-wide bandgap (4.5 eV to 5.3 eV, depending on its crystal structure), thermal stability, possibility of controlled n-type doping, and the availability of large-area native substrates for industrial-scale epitaxy and device fabrication. With a cut-off wavelength range of 250-280 nm, Ga2O3 is an excellent candidate for development of solar-blind photodetectors (SBPD), exhibiting high responsivity to deep ultra-violet (DUV) radiation, while being insensitive to the visible and infrared region of the electromagnetic spectrum. In Q-Si Lab, we synthesize by PLD crystalline/epitaxial thin films of Ga2O3 on a variety of substrates, and fabricate solar-blind photodetectors in different device geometries.

MSM-type Ga2O3 photodetectors

III-Nitrides

Owing to their wide (direct) band gap, robust chemical and thermal stability, AlGaN and GaN are highly promising materials for the development of solar-blind to visible-blind ultra-violet (UV) photodetectors (PDs). In Q-Si Lab, we fabricate UV photodetectors based on epitaxial films/heterostructures of these III-Nitrides, in different device geometries, and optimize their performance metrics, based on detailed analysis of photoresponse and dark current.

MSM-type GaN photodetectors (bottom). A GaN/AlGaN MOSHEMT based phototransistor

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