Group-IV Epitaxy & Photonics

GeSn

The alloy of Germanium and Tin, GeSn, is a promising group-IV system for the development of group-IV based CMOS compatible photonic components, such as NIR/SWIR photodetectors, LEDs and Lasers. Despite the low solid solubility of Sn in Ge, and a large mismatch between the lattice parameters of Sn and Ge, tremendous progress has been made towards epitaxial growth of this alloy and fabrication of different optoelectronic devices. Using a solid source molecular beam epitaxy, we grow high quality epitaxial layers and heterostructures based on GeSn and Ge, to develop and investigate the properties of a variety of photonic devices, operational in the NIR/SWIR region.

A GeSn p-i-n photodetector

Si:P Blocked Impurity Band Photodetectors

In astrophysics, astronomical detection at infrared wavelengths is crucial, due to the critical information in this wavelength range. For space-based astronomical observation, blocked-impurity-band (BIB) infrared detectors are desirable, owing to their broad response range, low dark current, high quantum efficiency, and excellent radiation resistance. In Q-Si lab, we fabricate BIB detectors based on optimally Phosphorus-doped Silicon epitaxial layers. The long term goal of this project is to develop focal plane arrays based on these BIB detectors.

Si:P BIB devices of different sizes.

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