Publications
Jagga, D., Useinov, A., De S. (2024) "WKB model of ferroelectric tunnel junctions for memory applications: voltage-dependent screening and electrostriction effects" in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1-3. https://doi.org/10.1109/EDTM58488.2024.10512202
Hsu, C. P., Useinov, A., Woon, W. Y., Liao, S., & Hou, T. H. (2024) "Synthesis and Phase Transition of Large‐Area Layered Ferroelectric Semiconductor α‐In2Se3 via 2D Solid‐Phase Crystallization" Advanced Electronic Materials, 2300880.https://doi.org/10.1002/aelm.202300880
Marye, S. A., Kumar, R. R., Useinov, A., & Tumilty, N. (2024) "Thermal stability, work function and Fermi level analysis of 2D multi-layered hexagonal boron nitride films" Microelectronic Engineering, 283, 112106
https://doi.org/10.1016/j.mee.2023.112106Jagga, D., Useinov, A., Korepanov, V. I., & Sedlovets, D. M. (2023). "Magnetic anomalies in polyphthalocyanines with Fe-, Ni-and Co-magnetic centers" Physica E: Low-dimensional Systems and Nanostructures, 154, 115795.
https://doi.org/10.1016/j.physe.2023.115795Jagga, D., & Useinov, A. (2023). "Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers", Journal of Applied Physics, vol. 134, no. 122, pp. 124101. https://doi.org/10.1063/5.0166078
Jagga, D., & Useinov, A. (2023, August) "WKB Approach for Ferroelectric Tunnel Junctions with Thomas-Fermi Voltage Dependent Screening and Electrostriction Effect" in 2023 3rd Asian Conference on Innovation in Technology (ASIANCON) pp. 1-6. IEEE., https://doi.org/10.1109/ASIANCON58793.2023.10270560
Jagga, D., & Useinov, A. (2023). "Thomas-Fermi interfacial screening with voltage-dependence of the screening lengths and influence of oxygen vacancies in MFTJs" in 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) pp. 1-2. IEEE. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134310
Jagga, D., Korepanov, V.I.,Sedlovets, D.M.; Useinov (2022) A."Spin-Induced Switching of Electronic State Populations in Transition Metal Polyphthalocyanines" Materials X 15, 8098. https://doi.org/10.3390/ma15228098
A. Useinov, D. Jagga, E.Y. Chang (2022) "Tunnel electroresistance in HZO -based ferroelectric tunnel junctions under hysteresis: approach of the point contact model and linearized Thomas-Fermi screening" ACS Applied Electronic Materials, vol. 4, no. 5, pp. 2238-2245. https://doi.org/10.1021/acsaelm.2c00022
A. Useinov (2022) "Application of the point-like contact model: Resistance Oscillations of the Domain Wall in Magnetic Nanowires and Junctions due to Mean Free Path Effects" SPIN, vol.12, No.1, 2150031 (7 pages) https://doi.org/10.1142/S2010324721500314
C.-H. Wu, A. Useinov, T.-L. Wu, and C.-J. Su (2021) “Ferroelectric characterization in ultrathin Hf0.5Zr0.5O2 MFIS capacitors by piezoresponse force microscopy (PFM) in vacuum” 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). IEEE, 2021, pp. 1–2, https://doi.org/10.1109/VLSI-TSA51926.2021.9440099
V. Gurylev, T.-K. Chin, A. Useinov (2020) "Charge transfer and field emission
characteristics of TiO2@CNTs nanocomposite: Effect of TiO2 crystallinity", Journal of Alloys and Compounds, vol. 857 March pp. 157598. https://doi.org/10.1016/j.jallcom.2020.157598
A. Useinov, H.-H. Lin, N. Useinov and L. Tagirov, (2020) "Simulation of the nanoscale interconnects within a spin-resolved electron transport model," 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, pp. 72-73. https://doi.org/10.1109/VLSI-TSA48913.2020.9203729
Artur Useinov, Hsiu-Hau Lin , Niazbeck Useinov (2020) Lenar Tagirov "Mathematical Description Data: Spin-Resolved Electron Transport in Nanoscale Heterojunctions: Theory and Applications" Data in Brief, Available online: 1 Sept., pp. 106233. https://doi.org/10.1016/j.jmmm.2020.166729
A. Useinov, H.-H. Lin, N. Useinov, L. Tagirov (2020) “Spin-resolved electron transport in nanoscale heterojunctions. Theory and applications” Journal of Magnetism and Magnetic Materials, vol. 508, 166729. https://doi.org/10.1016/j.jmmm.2020.166729
Thomas Egler, Hans Dittmann, Artur Useinov (2020) “Digital readout optimization of the random resistive states in magnetic tunnel junction”, Solid-State Electronics, vol. 163, 107666. https://doi.org/10.1016/j.sse.2019.107666
D. Turenne and A. Useinov, (2019) “Direct Tunneling and related TMR anomalies in magnetic tunnel junctions with embedded nanoparticles” IEEE Trans. on Mag. vol. 55, 1-4 (2019). https://doi.org/10.1109/TMAG.2019.2936367
Y.-T. E. Tang, C.-L. Fan, Y.-C. Kao, N. Modolo, C.-J. Su, T.-L. Wu, K.-H. Kao, P.-J. Wu, S.-W. Hsaio, A. Useinov, Pin Su, W.-F. Wu, G.-W. Huang, J.-M. Shieh, W.-K. Yeh and Y.-H.Wang (2019) “A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs” 2019 Symposium on VLSI Technology, T222-T223, https://doi.org/10.23919/VLSIT.2019.8776508
Artur Useinov, Chih-Huang Lai, et al. (2018) "Spin and Charge Tunneling Transport in Magnetic Tunnel Junctions With Embedded Nanoparticles" in E. Rentchler, N. Dormacheva et, M. Caporali "Novel Magnetic Nanostructures", Elsevier (2018)
https://doi.org/10.1016/B978-0-12-813594-5.00011-4A.M. Esmaeili, A.N. Useinov, and N.Kh. Useinov, (2018) “Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions,” J. Exp. Theor. Phys., vol. 126, no. 1, pp. 115–125.
A. Useinov, H.-H. Lin, and C.-H. Lai, (2017) “Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque,” Sci Rep, vol. 7, no. 1, p. 8357, https://www.nature.com/articles/s41598-017-08354-7
V. Gurylev, A. Useinov, P. Y. Hsieh, C. Y. Su, and T. P. Perng (2017) “Hydrogenated ZnO thin film with p-type surface conductivity from plasma treatment,” J. Phys. D: Appl. Phys., vol. 50, no. 24, p. 24LT02
A. Useinov, L.-X. Ye, C.-L. Yang, N. Useinov, H.-H. Lin, and C.-H. Lai (2016) “Calculation of the Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Particle's Size Dispersion”, IEEE Magnetics Letters 7, 3108203.
A. Useinov, C.-H. Lai, (2016) "Tunnel Magnetoresistance and Temperature Related Effects in Magnetic Tunnel Junctions with Embedded Nanoparticles" SPIN 6, 1650001. https://doi.org/10.1142/S2010324716500016