Research Works at IIT Kanpur: 

• Managing the Nanolab and Characterization lab 

• Characterized on-wafer and packaged semiconductor devices and circuits (power amplifiers) received from industry and academics from India and abroad

• DC IV and RF-S parameters, Pulse IV, and Load pull Characterization of Bulk MOSFET, FinFET, FDSOI MOSFET and HEMT using 

  • On-wafer Probe Station (Summit 11000), 

  • Semiconductor Device Analyzer (B1500A) 

  • ENA (E5071C)  and PNA-X (N5244A) Network  Analyser

  • AMCAD Pulsed IV System (AM3203)

  • Power Semiconductor Analyser (B1505A)

  • Load Pull Tuner (XT982GL01) 

  • Noise Figure Analyzer (N8975B)

• Carrying out research work on modeling and characterization of novel devices

• Working on the enhancement of industry-standard compact model ASM-HEMT

• Device parameters extraction using Industry-standard BSIM and ASM HEMT model 

• Working on the development of the reliability compact model (HCI and BTI) for transistors 

• Managing purchase of the new instrument, accessories and consumable for Nanolab and characterization lab by ordering new quotations through purchasing order

• Managing the maintenance of sophisticated instruments, accessories, and consumables

• Upgrade the software and hardware capabilities in device characterization lab

• Managing existing projects and write the new research proposal for attracting new research projects

Ph.D. Research (IIT Indore):  Brief Synopsis of Thesis Research:

• Modeling and simulation of Field Effect Transistor (FET) for biosensing applications

• Dielectric Modulation (DM) concept is used for detection of neutral and charged biomolecules

• Tunneling and Accumulation Mode transistor are investigated where Streptavidin and Anti-Iris antibody protein is detected through the realistic process of biomolecules detection

• Tunneling transistor is examined for biosensing with both point as well as line tunneling

• Theoretical study of the fabrication process of Inversion Mode, Tunneling FET and DM FET biosensor

• Ion Sensitive Field Effect Transistor (ISFET) based on tunneling phenomena is investigated, and

• higher sensitivity is achieved than the Nernst limit 

M.Tech Research (Shiv Nadar University Dadri U. P.): 

• Analytical modeling of the role of first-order intervalley scattering in determining the electrical resistance of silicon nanowire

• Design a low leakage 6T Static Random-Access Memory (SRAM) cell and Phase-Locked Loop (PLL) at STMicroelectronics Greater Noida (during summer course) 

• Comparative analysis of transimpedance amplifier in gigabit optical communication using optic systems tool