Brief Biography
Dr. Praveen Dwivedi is currently serving as an Assistant Professor in the Department of Electronics and Communication Engineering (Avionics) at Rajiv Gandhi National Aviation University (RGNAU), Amethi, Uttar Pradesh. He is also taking charge as a Coordinator, Dept. of Electronics and Communication Engineering and Dept. of Smart Drone Engi. He received his Ph.D. in Electrical Engineering from the Indian Institute of Technology (IIT) Indore in 2019, with a specialization in Semiconductor Device Modeling and Simulations. He holds an M.Tech in VLSI Systems and Technology from Shiv Nadar University and a B.E. in Electronics Engineering from Madhav Institute of Technology and Science (MITS), Gwalior.
Dr. Dwivedi has over six years of academic and research experience from IIT Kanpur, in semiconductor device modeling and simulation, on-wafer/packaged device characterization (DC, CV, RF, pulsed-IV, load-pull, noise figure), and compact model development using BSIM and ASM-HEMT frameworks. He has previously served at IIT Kanpur in various research and academic roles, including Project Executive Officer (PEO), Research Establishment Officer (REO), Institute Postdoctoral Fellow, and Senior Project Engineer. During this period, he was actively involved in multiple industry- and government-funded projects in collaboration with DRDO, ISRO, MaxLinear, Tagore Tech USA, and others.
Dr. Dwivedi has published extensively in high-impact journals and international conferences and contributed to the development of SPICE-compatible compact models and Process Design Kits (PDKs) for advanced CMOS and GaN technologies. He has also played a significant role in mentoring graduate students and providing technical training on advanced device characterization tools.
He is a Senior Member of the IEEE and an Associate Member of the Institute of Physics (IOP), and serves as a reviewer for several reputed journals and conferences in the field of semiconductor devices. His current research interests include compact modeling, TCAD simulation, RF/analog device characterization, and emerging transistor technologies such as FinFETs, TFETs, and GaN HEMTs