1. Spintronic devices for computing, memory, and data storage:
We work on innovative materials and nano-devices which go far beyond existing ones in energy efficiency, speed, and integration density. In particular, here we use materials and devices that couple electrons' spin and charge properties, also called spintronic devices. Our goal is to beat today's performance, energy, and scaling limits of data storage, memory, and computing devices, each by 100x. For example, can we build memories that simultaneously operate at pico-Second read/write, atto-Joule per bit operation, and at few-nanometer scales? This work involves new materials development, understanding of physics of thin films and interfaces, and their consequent electrical and magnetic behavior.
- Read more:
- Picosecond electric-field-induced switching of antiferromagnets, Physical Review Applied, Vol. 11, p. 024019, 2019.
- Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product, Applied Physics Letters, Vol. 108, p. 012403, 2016.
- Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields, Nature Nanotechnology, Vol. 9, p. 548, 2014.
2. High-frequency, communications and sensing devices:
We are also interested in using spintronic effects to build microwave, radio-frequency, and sensing devices. Examples are record-small electronic oscillators using spin-torque, and record-sensitive detectors of microwave radiation, also enabled by spintronic effects.
- Read more:
- Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices, Physical Review Applied, Vol. 11, p. 014022, 2019.
- Ultrahigh detection sensitivity exceeding 10^5 V/W in spin-torque diode, Applied Physics Letters, Vol. 113, p. 102401, 2018.
- Giant spin-torque diode sensitivity in the absence of bias magnetic field, Nature Communications, Vol. 7, p. 11259, 2016.
3. Novel circuits & architectures based on emerging nano-devices:
Here we focus on using the new devices which we develop, in novel architectures for computing systems, and to realize circuits/architectures where new intelligent functionalities emerge from the physics. We work closely with industry and interact across disciplines, to understand the requirements and develop the needed hardware, tools and ecosystems to translate device/circuit-level advances into applications.
- Read more:
- Analysis and Compact Modeling of Magnetic Tunnel Junctions Utilizing Voltage-Controlled Magnetic Anisotropy, IEEE Transactions on Magnetics, Vol. 54, No. 4, p. 4400209, 2018.
- Array-Level Analysis of Magnetoelectric Random Access Memory for High-Performance Embedded Applications, IEEE Magnetics Letters, 2017.