Service I: Low-Temperature Deuterium Annealing (LTDA) (4" Silicon Wafer)

• Process Conditions: Diluted deuterium, 300 ℃, and 1 hr

• Service Fee (including VAT): ₩ 2,200,000 (USD 1,800 ) per run (up to 3 wafers per run) 

• References for Detailed Process Conditions:

   [1] M.-W. Kim et al., Semicond. Sci. Technol., vol. xx, no. x,  pp. xxxx-xxxx, in press. [ Website ] 

   [2] J.-W. Yeon et al., IEEE Trans. Nanotechnol., vol. 24, pp. 54–58, Jan. 2025. [ Website ]  

   [3] T.-H. Kil et al., IEEE J. Electron Devices Soc., vol. 12, no. 1, pp. 1030-1033, Dec. 2024. [ Website ]  

   [4] T.-H. Kil et al., IEEE Trans. Electron Devices,  vol. 71, no. 9,  pp. 5177-5181, Sept. 2024. [ Website ]  

   [5] T.-H. Kil et al., IEEE Trans. Electron Devices,  vol. 71, no. 2,  pp. 1078–1083, Feb. 2024. [ Website ]  

   [6] D.-H. Jung et al., Microelectron. Reliab., vol. 151, no. 115276, Dec. 2023. [ Website ]  

   [7] J.-Y. Ku et al., IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3958–3962, Jul. 2023. [ Website ] 

   [8] D.-H. Wang et al., IEEE Trans. Device Mater. Reliab., vol. 23, no. 2, pp. 297–301, Jun. 2023. [ Website ] 

   [9] J.-M. Yu et al., Solid-State Electron., vol. 197, no. 108421, Nov. 2022. [ Website ]  

Service II: Rapid Deuterium Annealing (RDA) (6" Silicon Wafer)

• Process Conditions: Diluted deuterium, 250 ℃, and 3 mins

• Service Fee (including VAT): ₩ 4,400,000 (USD 3,600 ) per run (up to 5 wafers per run)

• References for Detailed Process Conditions:

[1] M.-W. Kim et al., Semicond. Sci. Technol., vol. xx, no. x,  pp. xxxx-xxxx, in press. [ Website ] 

[2] E.-C. Yun et al., IEEE Trans. Electron Devices, vol. xx, no. x,  pp. xxxx-xxxx, in press. [ Website ] 

[3] S.-J. Jeon et al., Semicond. Sci. Technol., vol. 40, no. 8,  pp. 1-5, Aug. 2025. [ Website ] 

Service III: Wafer-Level Reliability Measurement (8" Silicon Wafer)

ParkLab Semiconductor provides comprehensive wafer-level reliability (WLR) characterization on 8-inch silicon wafers, supporting advanced device research, process evaluation, and reliability screening. We deliver precise electrical measurements with fully traceable raw data output, enabling accurate modeling and in-depth analysis. 

Measurement Capabilities

• ID–VG and ID–VD electrical characterization (raw data provided) 

• Bias-Temperature Instability (BTI) 

• Hot-Carrier Injection (HCI) 

• Time-Dependent Dielectric Breakdown (TDDB)

Specifications 

• Equipment: Agilent B1500A Semiconductor Device Analyzer 

• Resolution: 00 A

• Wafer Size: 8-inch or less 

• Temperature: Room Temperature (RT) ~ 200 ℃

• Minimum Pad Size: ≥ 50 nm x 50 nm

Service Fee (including VAT)

• ₩ 440,000 (USD 360) per hour (includes full equipment utilization and engineer labor cost)