Patent
United States Patent
Self-aligned unsymmetrical gate (SAUG) FinFET and methods of forming the same [Patent No.=US 10,971,629]
Method of manufacturing a semiconductor device including a ternary alloy layer formed by a microwafe anneal process [Patent No.=US 10,453,688]
Semiconductor device including a fin structure [Patent No.=US 10,269,966]
FinFET semiconductor device having fins with stronger structural strength [Patent No.=US 9,859,276]
Semiconductor device and manufacturing method thereof [Patent No.=US 9,837,538]
Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereof [Patent No.=US 9,590,105]
Semiconductor devices and methods of manufacture thereof [Patent No.=US 9,502,502]
FinFET semiconductor device having fins with stronger structural strength [Patent No.=US 9,496,259]
Taiwan Patent
Method of forming semiconductor structure [Patent No.=TW202002027A]
Method of manufacturing a semiconductor device [Patent No.=TW201824362A]
Semiconductor device and manufacturing method thereof [Patent No.=TW201801157A]
Finfet semiconductor device having fins with stronger structural strength [Patent No.=TW201637199A]
Semiconductor device and manufacturing method thereof [Patent No.=TW201635390A]
N type metal oxide semiconductor transistor structure having compression strain silicon-germanium channel formed on silicon (110) substrate [Patent No.=TW200735344A]
A structure of high electron mobility ge nmosfet by using a tensile [110] uni-axial strain [Patent No.=TW200711076A]
Nonvolatile flash memory of hafnium silicate nanocrystal [Patent No.=TW200618192A]
China Patent
Method for forming semiconductor structure [Patent No.=CN110660671A]
Method of manufacturing a semiconductor device [Patent No.=CN107785249A]
Semiconductor device and manufacturing method thereof [Patent No.=CN107230701A]
Semiconductor device and formation thereof [Patent No.=CN104979397A]