Patent

United States Patent

  1. Self-aligned unsymmetrical gate (SAUG) FinFET and methods of forming the same [Patent No.=US 10,971,629]

  2. Method of manufacturing a semiconductor device including a ternary alloy layer formed by a microwafe anneal process [Patent No.=US 10,453,688]

  3. Semiconductor device including a fin structure [Patent No.=US 10,269,966]

  4. FinFET semiconductor device having fins with stronger structural strength [Patent No.=US 9,859,276]

  5. Semiconductor device and manufacturing method thereof [Patent No.=US 9,837,538]

  6. Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereof [Patent No.=US 9,590,105]

  7. Semiconductor devices and methods of manufacture thereof [Patent No.=US 9,502,502]

  8. FinFET semiconductor device having fins with stronger structural strength [Patent No.=US 9,496,259]

Taiwan Patent

  1. Method of forming semiconductor structure [Patent No.=TW202002027A]

  2. Method of manufacturing a semiconductor device [Patent No.=TW201824362A]

  3. Semiconductor device and manufacturing method thereof [Patent No.=TW201801157A]

  4. Finfet semiconductor device having fins with stronger structural strength [Patent No.=TW201637199A]

  5. Semiconductor device and manufacturing method thereof [Patent No.=TW201635390A]

  6. N type metal oxide semiconductor transistor structure having compression strain silicon-germanium channel formed on silicon (110) substrate [Patent No.=TW200735344A]

  7. A structure of high electron mobility ge nmosfet by using a tensile [110] uni-axial strain [Patent No.=TW200711076A]

  8. Nonvolatile flash memory of hafnium silicate nanocrystal [Patent No.=TW200618192A]

China Patent

  1. Method for forming semiconductor structure [Patent No.=CN110660671A]

  2. Method of manufacturing a semiconductor device [Patent No.=CN107785249A]

  3. Semiconductor device and manufacturing method thereof [Patent No.=CN107230701A]

  4. Semiconductor device and formation thereof [Patent No.=CN104979397A]