Research Interests
NSR team is conducting research with interest in a wide range of fields related to semiconductors. Among them, there is a lot of interest in research on neuromorphic devices that mimic the human brain, which is in the spotlight as a next-generation semiconductor. Neuromorphic devices are being studied mainly based on oxide semiconductors, and possible research using magnetic materials and applicability research using low-dimensional materials are also being conducted. Neuromorphic device research is conducted from material search to unit device manufacturing and performance test, cross-point array fabrication, and applicability research on object recognition computation through the development of neural network (NN) algorithms. In the array implementation of neuromorphic devices, it is divided into a study of a device including a self-reactivating function and a CMOS-based resistance memory study.
It is also conducting device analysis studies on various problems such as heat generation, high voltage, and impact ionization by hot electrons, which are fatigue destruction phenomena that occur during the operation of semiconductor devices. We also study spin-electronics, which implements and controls various states by utilizing spin information of the former, and the implementation of quantum bits at low temperatures by utilizing microwave capacity that can be implemented in low-dimensional materials. It is also attempting to implement random access quantum memory at low temperatures using the Josephson junction.
The quantum dot study, which controls the characteristics by controlling the size, structure, bonding shape, and shape of semiconductors, studies quantum mechanical phenomena according to the type of core shell and the type of external coding film. It implements a structure that can induce desired band gap and control light emission and absorption through band-gap engineering. Research on nano-bot in biomedical applications is also being conducted, and research on electroluminescence by AC voltage is also being conducted.
Neuromorphic Device Research
Artificial intelligence / Neuromorphic computing
The field of artificial intelligence computing that simulates nerve cells (neurons) in the human brain
Aimed at low power & high operation as a hardware-based model, not software-based technology
Resistance memory in the oxide semiconductor
A study on resistive memory using resistance of various causes in oxide semiconductors. Conducting research on the conduction properties through the control of oxygen atoms or the induction of oxygen deprivation through understanding the oxygen behavior of oxide semiconductors. The ultimate goal is to implement an operator capable of intelligent learning to mimic the human brain.
TaOx-based non-volatile resistance memory, which can induce resistance change through Set/Reset.
[M.-J. Lee et al., nature materials, (2011)]
TaOx-based non-volatile resistance memory, which can induce resistance change through Set/Reset.Change of set/reset phenomenon according to device surface roughness and resistance-based memory reliability study.
[M.-J. Lee et al., ACS Appl. Mater. Interfaces (2018)]
Oxide semiconductor TFT (detail)
Various defect phenomena and fatigue failure phenomena that occur during oxide semiconductor driving are studied. We study the generation of unexpected energy states and abnormal electrical characteristics in local areas that occur when IC is applied to oxide semiconductors.
Spin electronics device
Demonstrated an experimental technique to straightforwardly observe the IDM interaction, namely Brillouin light scattering. The non-reciprocal spin wave dispersions, systematically measured by Brillouin light scattering, allow not only the determination of the IDM energy densities beyond the regime of perpendicular magnetization but also the revelation of the inverse proportionality with the thickness of the magnetic layer, which is a clear signature of the interfacial nature.
[J.-S. Kim et al., nature communi. (2015)] / [J.-S. Kim et al., Nano Letters (2016)]
Nanoelectronic device
Our research interest is elucidating quantum transport behaviors in quantum nanoelectronic devices using high frequency and low temperature techniques. We are also investgating quantum hybrid systems.
석/박사 프로그램 Link
나노전자소자
고주파 소자 : 양자메모리, microwave cavity + 나노전자소자, 조셉슨 소자, 큐빗 소자
Quantum Dot
Chemistry and photophysics of luminescent nanomaterials, optoelectronic and biomedical applications of colloidal nanomaterials / Research on maximizing emission efficiency by adjusting the size and shape using Quantum dots
[S. -J Lim et al., Nature Communi. (2015)] / [S. -J Lim et al., Nature Communi. (2018)]
DFT Calculations (Semiconductors / 2D Materials)
Our research interest focus on the understanding of fundamental physical properties of novel semiconductors and low-dimensional materials using the first-principles calculations.
[W. S. Yun et al., Phys. Rev. B (2012) (> 1,000 citations)] / [W. S. Yun et al., Appl. Phys. Lett. (2019)] / [W. S. Yun et al., Phys. Chem. Chem. Phys. (2022)]